Search results for "komponentit"

Komponentit ja verkkopalvelut elektronisten liiketoimintaprosessien toteuttamisen välineinä

2002

Enterprise JavaBeans -komponenttimalli ja sen vaikutus ohjelmistonkehitykseen

2001

Neutron-Induced Effects on a Self-Refresh DRAM

2022

International audience; The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat fr…

Improved stability of black silicon detectors using aluminum oxide surface passivation

2021

Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, the induced junction is formed using n-type silicon and atomic-layer deposited aluminum oxide (Al2O3), which contains a large negative fixed charge. We compare the results with corresponding planar pn-junction detectors passivated with either with silicon dioxide (SiO2) or Al2O3. The results show that the induced junction detectors remain stable as their responsivity remains nearly unaffected during the electron beam…

Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

2022

The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…

Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

2019

IEEE Transactions on Nuclear Science, 66 (7)

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

2021

Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…

Single-Event Burnout Mechanisms in SiC Power MOSFETs

2018

Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed

Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

2019

A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal–oxide–field-effect transistors (MOSFETs) and power junction barrier Schottky diodes. The MOSFETs and diodes have similar structures enabling the identification of effects associated specifically with the parasitic bipolar structure that is present in the MOSFETs, but not the diodes. The collected charge in the diodes varies only with laser depth, whereas it varies with depth and lateral position in the MOSFETs. Optical simulations demonstrate that the variations in collected charge observed are from the semiconductor device structure and not from metal/passiva…