Search results for "layer"
showing 10 items of 2667 documents
Photoelectrochemical characterization of Cu2O-nanowire arrays electrodeposited into anodic alumina membranes
2007
Perfectly aligned nanowire arrays of polycrystalline Cu2O were grown by template-pulsed electrodeposition from a cupric acetate-sodium acetate bath into anodic alumina membranes (AAM). The photoelectrochemical behavior of arrays with different nanowire lengths (0.5 mu m and 2 mu m) was investigated in neutral solution, and the results compared to those pertaining to Cu2O films grown with the same procedure. Although all samples displayed the same indirect bandgap (similar to 1.9 eV), differences were observed both in photocurrent intensity and sign. The latter changed with potential and wavelength in different ways for nanowires and films, revealing a different defect concentration in the t…
Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions
1999
We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.
Normal Metal-Insulator-Superconductor Tunnel Junctions With Pulsed Laser Deposited Titanium Nitride as Superconductor
2021
Here we report the fabrication of normal metal – insulator – superconductor (NIS) tunnel junctions using superconducting titanium nitride grown by pulsed laser deposition (PLD). The films for NIS junction fabrication were deposited on two different substrates: silicon nitride film and magnesium oxide. TiN films were characterized by means of electrical transport measurements, and films with superconducting transition temperatures above the liquid helium boiling point were chosen for fabrication of NIS junctions. Tunnel junction devices were successfully fabricated using electron beam lithography and shadow evaporation techniques. The insulator layer formation was performed using two differe…
Exfoliation of Alpha-Germanium: A Covalent Diamond-Like Structure
2021
2D materials have opened a new field in materials science with outstanding scientific and technological impact. A largely explored route for the preparation of 2D materials is the exfoliation of layered crystals with weak forces between their layers. However, its application to covalent crystals remains elusive. Herein, a further step is taken by introducing the exfoliation of germanium, a narrow-bandgap semiconductor presenting a 3D diamond-like structure with strong covalent bonds. Pure α-germanium is exfoliated following a simple one-step procedure assisted by wet ball-milling, allowing gram-scale fabrication of high-quality layers with large lateral dimensions and nanometer thicknesses.…
Planar Technology for NDT-Ge X-Ray Microcalorimeters: Absorber Fabrication
2009
We have investigated the electroplating process to deposit thick uniform films of tin on a Ge wafer coated with Spin‐On Glass, in order to fabricate the absorbers for Ge microcalorimeter arrays. Here we discuss some technological details and propose two alternative metal bilayer to be used as seed for the electroplating.
TiO2 in memristors and resistive random access memory devices
2021
Abstract One of the most recent applications of TiO2 thin films is as an oxide layer in memristors, electronic devices considered as one of the most promising nonvolatile memories and as possible building units for neuromorphic computing. This chapter aims to describe several fabrication ways, either (electro)chemical or physical methods, of TiO2 thin films and to highlight the relationship between method and layer properties. Some fundamentals on the mechanism of memristors’ operation, that is, resistive switching in oxide thin films, will be given, classifying the different types of devices based on the used electrode materials and underlying physicochemical processes. Finally, it will be…
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
2004
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer
2015
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
Seed layer technique for high quality epitaxial manganite films
2016
We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening tempera…
Monolayers and Langmuir-Blodgett Multilayers of Discotic Liquid Crystals?
2008
The field of monolayer and multilayer films of discotic LCs is at its very beginning. The scope and limitations of this preparation method have not yet been explored, and little is known about the structures obtainable. However, the potential access to extraordinary, ordered thin films is fascinating, and will stimulate research in the future.