Search results for "layer"
showing 10 items of 2667 documents
Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers
2002
Multilayer structure containing vertically stacked InAs/InP self-assembled quantum wires have been successfully grown by molecular-beam epitaxy. The influence of the InP spacer layer thickness on the structural and optical properties of the wire superlattice has been studied by means of transmission electron microscopy and photoluminescence. The coherent propagation of the strain field in the sample with a 5-nm-thick spacer determines by a size filtering effect a good homogeneity and uniformity of the wire stacks, and hence a good optical quality. The exciton recombination dynamics in the wire superlattice cannot be related to thermal escape of carriers out to the barriers, as occurs in sin…
Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires
2003
3 páginas, 2 figuras.-- PACS: 73.21.Hb; 78.55.Cr; 78.67.Lt.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.
Photoluminescence study of excitons in homoepitaxial GaN
2001
High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free- and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, EG(4.3 K) = 3.506 eV, can be given. From the donor bound excitons and their “two-electron” satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the ele…
Incorporation of potassium halides in the mechanosynthesis of inorganic perovskites: feasibility and limitations of ion-replacement and trap passivat…
2018
Potassium halides (KX; X = I, Br, or Cl) were incorporated as partial replacements of CsBr in the mechanosynthesis of CsPbBr3. This led to partial substitution of both monovalent ions forming mixed Cs1−xKxPbBr3−yXy perovskites. Longer photoluminescence lifetimes were also observed, possibly linked to the formation of a non-perovskite KPb2X5 passivating layer.
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
2008
http://link.aip.org/link/?JAPIAU/103/056108/1
Role of Self-Absorption in the Photoluminescence Waveguided along CsPbBr3 Perovskite Nanocrystals Thin Films
2020
During the last years, perovskite nanocrystals (PNCs) have been intensively studied as nanomaterials with excellent light absorption/emission properties. For example, PNCs have been successfully applied in solar cells, where the high absorption coefficient above the band gap increases the conversion efficiencies; or in optical sources, where the high quantum yield of emission at room temperature allows a low threshold of stimulated emission. In this scenario, an optical waveguide represents a suitable platform to enhance their electrooptical properties and to integrate different photonic functionalities. However, propagation of light along close packed films of PNCs is usually restricted to…
Electronic structure of delta-doped $La:SrTiO_{3}$ layers by hard X-ray photoelectron spectroscopy
2012
We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO3 layer that consisted of a 3-nm thickness of La-doped SrTiO3 with 6% La embedded in a SrTiO3 film. Results are compared to a thick, uniformily doped La:SrTiO3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti3+ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.
First-principles LCAO study of the low and room temperature phases of CdPS$_3$
2020
A.K. is grateful to the Latvian Council of Science project no. lzp-2018/2-0353 for financial support. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.
Conductance control at the LaAlO3/SrTiO3-interface by a multiferroic BiFeO3 ad-layer
2014
Multilayered BiFeO3 (BFO)/LaAlO3 (LAO) thin film samples were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition. In this work, the ferroelectric polarization of a multiferroic BFO ad-layer on top of the quasi-two-dimensional electron gas (2DEG) at the LAO/STO interface is used to manipulate the conductivity of the quasi-2DEG. By microstructuring the conductive area of the LAO/STO-interface, a four-point geometry for the measurement of the resistivity was achieved. Piezo force microscopy allows for imaging and poling the spontaneous ferroelectric polarization of the multiferroic layer. The resistance changes showed a linear dependence on the area scanned and a hysteretic behav…
Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions
2014
Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron mi…