Search results for "mesoscopic"
showing 10 items of 709 documents
Photoluminescence of Ga-face AlGaN/GaN single heterostructures
2001
Abstract The radiative recombination in Ga-face Al 0.30 Ga 0.70 N/GaN single heterostructures (SHs) was studied by photoluminescence (PL) measurements. An energy shift of the excitonic transitions toward higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. In addition to these exciton lines, a broad band energetically localized between the exciton lines and the LO-phonon replica was noticed in the undoped SH. From its energy position, excitation power dependence, as well as temperature behaviour, we have attributed this luminescence to the H -band (HB), which is representative of the two-dimensional electron gas (2DEG) recombination.
Simultaneous readout of two charge qubits
2006
We consider a system of two solid state charge qubits, coupled to a single read-out device, consisting of a single-electron transistor (SET). The conductance of each tunnel junction is influenced by its neighboring qubit, and thus the current through the transistor is determined by the qubits' state. The full counting statistics of the electrons passing the transistor is calculated, and we discuss qubit dephasing, as well as the quantum efficiency of the readout. The current measurement is then compared to readout using real-time detection of the SET island's charge state. For the latter method we show that the quantum efficiency is always unity. Comparing the two methods a simple geometric…
Kondo Resonance in a Mesoscopic Ring Coupled to a Quantum Dot: Exact Results for the Aharonov-Bohm/Casher Effects
2000
We study the persistent currents induced by both the Aharonov-Bohm and Aharonov-Casher effects in a one-dimensional mesoscopic ring coupled to a side-branch quantum dot at Kondo resonance. For privileged values of the Aharonov-Bohm-Casher fluxes, the problem can be mapped onto an integrable model, exactly solvable by a Bethe ansatz. In the case of a pure magnetic Aharonov-Bohm flux, we find that the presence of the quantum dot has no effect on the persistent current. In contrast, the Kondo resonance interferes with the spin-dependent Aharonov-Casher effect to induce a current which, in the strong-coupling limit, is independent of the number of electrons in the ring.
Quantum gravitational decoherence from fluctuating minimal length and deformation parameter at the Planck scale
2020
Schemes of gravitationally induced decoherence are being actively investigated as possible mechanisms for the quantum-to-classical transition. Here, we introduce a decoherence process due to quantum gravity effects. We assume a foamy quantum spacetime with a fluctuating minimal length coinciding on average with the Planck scale. Considering deformed canonical commutation relations with a fluctuating deformation parameter, we derive a Lindblad master equation that yields localization in energy space and decoherence times consistent with the currently available observational evidence. Compared to other schemes of gravitational decoherence, we find that the decoherence rate predicted by our mo…
A 3D mesoscopic approach for discrete dislocation dynamics
2001
In recent years a noticeable renewed interest in modeling dislocations at the mesoscopic scale has been developed leading to significant advances in the field. This interest has arisen from a desire to link the atomistic and macroscopic length scales. In this context, we have recently developed a 3D-discrete dislocation dynamics model (DDD) based on a nodal discretization of the dislocations. We present here the basis of our DDD model and two examples of studies with single and multiple slip planes.
Domain wall junctions in a generalized Wess-Zumino model
1999
We investigate domain wall junctions in a generalized Wess-Zumino model with a Z(N) symmetry. We present a method to identify the junctions which are potentially BPS saturated. We then use a numerical simulation to show that those junctions indeed saturate the BPS bound for N=4. In addition, we study the decay of unstable non-BPS junctions.
Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electri…
2016
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, result…
Communication: anion-specific response of mesoscopic organization in ionic liquids upon pressurization
2018
One of the outstanding features of ionic liquids is their inherently hierarchical structural organization at mesoscopic spatial scales. Recently experimental and computational studies showed the fading of this feature when pressurising. Here we use simulations to show that this effect is not general: appropriate anion choice leads to an obstinate resistance against pressurization. Published by AIP Publishing.
High accuracy Raman measurements using the Stokes and anti-Stokes lines
1997
We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…
Interlayer exciton dynamics in van der Waals heterostructures
2018
Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be stacked to heterostructures enabling the design of new materials with tailored properties. The strong Coulomb interaction gives rise to interlayer excitons, where electrons and holes are spatially separated in different layers. In this work, we reveal the microscopic processes behind the formation, thermalization and decay of these fundamentally interesting and technologically relevant interlayer excitonic states. In particular, we present for the exemplar…