Search results for "molecular beam epitaxy"
showing 10 items of 73 documents
Solar blind AlGaN photodetectors with a very high spectral selectivity
2006
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques
2015
The growth selectivity and structural quality of GaN nanowires obtained by plasma-assisted molecular beam epitaxy on pre-patterned GaN(0001) templates are investigated by means of non-destructive techniques. Optimum control over the nanowire arrangement and size requires a pitch between the mask apertures below twice the diffusion length of Ga atoms. Lower pitches, however, seem to slightly diminish the structural quality of the material, as revealed by the increase of the Raman peak linewidths. The photoluminescence spectra of the nanowires show a considerable presence of basal plane stacking faults, whose density increases for decreasing nanowire diameter. The capabilities of Kelvin probe…
Structure and electronic properties of ultrathin Co films on W(110)
2004
Abstract The structure and electronic properties of ultrathin Co films on W(1 1 0) grown by molecular beam epitaxy in UHV were investigated by low energy electron diffraction (LEED) and scanning tunneling microscopy and spectroscopy (STM and STS). For coverages above 0.7 ML the pseudomorphic (ps) monolayer is transformed gradually into close-packed (cp-) monolayer areas, showing up as separated islands that increase in size with coverage until the cp-monolayer is complete. Two different structures of the cp-monolayer were observed by atomically resolved STM, both leading to a 8 × 1 superstructure in the LEED pattern. Higher coverages continue to grow in the Stransky–Krastanov growth mode fo…
Magnetic and magnetoelastic properties of epitaxial (2 1 1)-oriented RFe2 (R=Dy, Tb) thin films
2005
Abstract Epitaxial, (2 1 1)-oriented thin films of RFe 2 (R: rare earth; here: Dy, Tb) were deposited by molecular beam epitaxy on faceted and non-faceted α - Al 2 O 3 ( 1 0 1 ¯ 0 ) (m-plane) substrates utilizing a 15 A thin Fe seed layer and a 500 A Nb buffer layer. Detailed X-ray diffraction analyses revealed a twin-free epitaxial (2 1 1)-oriented growth of buffer layer and film. The magnetostrictive layer RFe 2 , as well as the template layers Nb and Mo exhibited the same crystallographic in-plane orientation with regard to the substrate. The same epitaxial relationship was found for films prepared on faceted and on non-faceted substrates. This implies a coherent crystal overgrowth of th…
Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC
2019
The formation of a self-limited metallic bilayer is reported during the growth of GaN by plasma-assisted molecular beam epitaxy on graphene on (0001) SiC. Depending on growth conditions, this layer may consist of either Ga or In, which gets intercalated between graphene and the SiC surface. Diffusion of metal atoms is eased by steps at SiC surface and N plasma induced defects in the graphene layer. Energetically favorable wetting of the (0001) SiC surface by Ga or In is tentatively assigned to the breaking of covalent bonds between (0001) SiC surface and carbon buffer layer. As a consequence, graphene doping and local strain/doping fluctuations decrease. Furthermore, the presence of a metal…
Thin film preparation of the low charge carrier density Kondo system CeSb
1999
Abstract We report the thin film preparation of CeSb by means of molecular beam epitaxy (MBE) onto sapphire (1 1 −2 0) substrates. Above a substrate temperature of about 300°C CeSb crystallizes in (0 0 1) orientation. The growth mode of the films changes from a fiber textured to an epitaxial mode for deposition temperatures above 900°C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo temperature TK and the magnetic ordering temperature TN, are not changed significantly.
Optimal ferromagnetically-coated carbon nanotube tips for ultra-high resolution magnetic force microscopy
2013
Using single-walled carbon nanotubes homogeneously coated with ferromagnetic metal as ultra-high resolution magnetic force microscopy probes, we investigate the key image formation parameters and their dependence on coating thickness. The crucial step of introducing molecular beam epitaxy for deposition of the magnetic coating allows highly controlled fabrication of tips with small magnetic volume, while retaining high magnetic anisotropy and prolonged lifetime characteristics. Calculating the interaction between the tips and a magnetic sample, including hitherto neglected thermal noise effects, we show that optimal imaging is achieved for a finite, intermediate-thickness magnetic coating, …
Dopant radial inhomogeneity in Mg-doped GaN nanowires
2018
International audience; Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the po…
Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices
2011
We present in this work the characterization studies carried on GaN — thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.
Magnetotransport properties of epitaxial - and -oriented CeSb thin films
2000
Abstract We present the electronic magnetotransport properties of (1 0 0) - and (1 1 1) -oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire (1 1 2 0) and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0) -oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 1) -oriented films slight deviations were observed. In Hall-effect measurements of (1 0 0) -oriented samples a sign change of the Hall coefficient occurred which is in contrast to m…