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RESEARCH PRODUCT

Propagation Length of Antiferromagnetic Magnons Governed by Domain Configurations.

Gerhard JakobSven BeckerLorenzo BaldratiOlena GomonayAsaf KayMathias KläuiMathias KläuiRomain LebrunAvner RothschildCamilo UlloaAlireza QaiumzadehArne BrataasFlorian KronastJairo SinovaRembert A. DuineRembert A. DuineRembert A. DuineDaniel A. GraveAndrew Ross

subject

XMLD-PEEM magnetic imagingMaterials scienceMagnetic domain530 PhysicsTerahertz radiationFOS: Physical sciencesBioengineering02 engineering and technologymagnetic domainsspin transportmagnonsMicrometreCondensed Matter::Materials ScienceAntiferromagnetismGeneral Materials ScienceThin filmControlling collective statesSpin-½Condensed Matter - Materials ScienceCondensed matter physicsSpintronicsMechanical EngineeringMagnonmagnon scatteringAntiferromagnetsMaterials Science (cond-mat.mtrl-sci)General Chemistry530 Physik021001 nanoscience & nanotechnologyCondensed Matter PhysicsCondensed Matter::Strongly Correlated Electrons0210 nano-technology

description

Spintronics seeks to functionalize antiferromagnetic materials to develop memory and logic devices operating at terahertz speed and robust against external magnetic field perturbations. To be useful, such functionality needs to be developed in thin film devices. The key functionality of long-distance spin-transport has, however, so far only been reported in bulk single crystal antiferromagnets, while in thin films, transport has so far been limited to a few nanometers. In this work, we electrically achieve a long-distance propagation of spin-information in thin films of the insulating antiferromagnet hematite. Through transport and magnetic imaging, we demonstrate a strong correlation between the efficiency of the transport of magnons, which carry spin-information, and the magnetic domain structure of the films. In thin films with large domains, magnons propagate over micrometer distances whilst they attenuate over much shorter distances in multidomain thin films. The governing factor of the attenuation is related to scattering at domain walls, and we demonstrate that we can reduce this through training by field cyclings. For the appropriate crystalline orientation of the films, spin-transport is achieved in zero applied field across micrometers, as required for integration with devices.

10.1021/acs.nanolett.9b03837https://doi.org/10.1021/acs.nanolett.9b03837