Search results for "Atomic layer"
showing 10 items of 140 documents
Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions
2014
Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron mi…
Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
2017
Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stress-driven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress-and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at…
Enhanced operational stability through interfacial modification by active encapsulation of perovskite solar cells
2020
Encapsulates are, in general, the passive components of any photovoltaic device that provides the required shielding from the externally stimulated degradation. Here we provide comprehensive physical insight depicting a rather non-trivial active nature, in contrast to the supposedly passive, atomic layer deposition (ALD) grown Al2O3 encapsulate layer on the hybrid perovskite [(FA0.83MA0.17)0.95Cs0.05PbI2.5Br0.5] photovoltaic device having the configuration: glass/FTO/SnO2/perovskite/spiro-OMeTAD/Au/(±) Al2O3. By combining various electrical characterization techniques, our experimental observations indicate that the ALD chemistry produces considerable enhancement of the electronic conductiv…
Influence of ZnO/graphene nanolaminate periodicity on their structural and mechanical properties
2018
International audience; Structural, electronic and mechanical properties of ZnO/Graphene (ZnO/G) nanolaminates fabricated by low temperature atomic layer deposition (ALD) and chemical vapor deposition (CVD) were investigated. We performed scanning and transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-Ray photoelectron spectroscopy (XPS) and nanoindentation to characterize the ZnO/G nanolaminates. The main structural and mechanical parameters of ZnO/G nanolaminates were calculated. The obtained results were analyzed and interpreted taking into account mechanical interaction and charge effects occurring at the …
Antimicrobial Bilayer Nanocomposites Based on the Incorporation of As-Synthetized Hollow Zinc Oxide Nanotubes
2020
© 2020 by the authors.
Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides
2018
Producción Científica
Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
2017
Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied by depositing the films using diethylzinc and O2 plasma from inductively-coupled plasma (ICP) and capacitively-coupled plasma (CCP) plasma source configurations. The CCP-PEALD was operated using both remote and direct plasma. It was observed that the films deposited by means of remote ICP and CCP were all highly oxygen rich, independently on plasma operation parameters, but impurity (H, C) contents could be reduced by increasing plasma pulse time and applied power. With the direct CCP-PEALD the film composition was closer to stoichiometric, and film crystallinity was enhanced. The ZnO film growth was observe…
Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen
2012
Abstract Ru thin films were grown on hydrogen terminated Si, SiO 2 , Al 2 O 3 , HfO 2 , and TiO 2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium precursor and oxygen. The 4–20 nm thick films on these surfaces consisted of nanocrystalline hexagonal metallic ruthenium, regardless of the deposition temperature. At the lowest temperatures examined, 250–255 °C, the growth of the Ru films was favored on silicon, compared to the growth on Al 2 O 3 , TiO 2 and HfO 2 . At higher temperatures the nucleation and growth of Ru became enhanced in particular on HfO 2 , compared to the process on silicon. At 320–325 °C, no growth occurred on Si–H and SiO 2 -covered silicon. Res…
Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen
2011
Ru films were grown by atomic layer deposition in the temperature range of 275―350°C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO 2 , ZrO 2 , and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20:1 aspect ratio. ZrO 2 promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO 2 with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8―…
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
2014
In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content i…