Search results for "EDC"
showing 10 items of 134 documents
Programming options for nanocrystal MOS memories
2003
Nanocrystal memories represent a promising candidate for the scaling of FLASH memories. In these devices, the charge is not stored in a continuous floating gate but in a discontinuous layer composed by numerous discrete silicon quantum dots well separated one from the other.The nanocrystals of radius of few nanometers are realized by chemical vapor deposition (CVD) of silicon on the tunnel oxide of 2.8 nm of thickness. These islands have been coated with a control oxide of 7 nm formed by CVD and incorporated in Metal-Oxide-Semiconductor structure. The devices are programmed and erased by tunnelling using low voltages and fast times. In addition, the programming can be easily achieved also b…
Triāžas procesa ietekme uz pacientu aprūpi neatliekamās medicīnas klīnikā
2015
Maģistra darba tēma ir „Triāžas procesa ietekme uz pacienta aprūpi neatliekamās palīdzības klīnikā”. Triāža ir process, ko izmanto, lai šķirotu pacientus pēc prioritātēm attiecībā uz medicīniskās palīdzības saņemšanu. Pareizi veicot triāžu, iespējams veiksmīgi organizēt pacientu plūsmu nodaļā, sniedzot ātrāku palīdzību tiem pacientiem, kuri no tās gūs lielāku labumu. Sakarā ar to, ka tirāža ir samērā jaunā pacientu šķirošanas sistēma Latvijas klīnikās, darba mērķis ir analizēt tirāžas procesu vienā no neatliekamās medicīnas klīnikām. Darba tiek izvirzīta hipotēze, kā arteriālā asinsspiediena noteikšana triāžas etapā ir vienkārša un ērta skrīniga metode, kas ļautu laicīgi atpazīt augsta risk…
A Method for Accurate Measurements of Optimum Noise Parameters of Microwave Transistors
1985
A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.
ACCURATE MEASUREMENTS OF OPTIMUM NOISE PARAMETERS OF MICROWAVE TRANSISTORS
1986
A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.
A Comparison of Special Bonding Techniques for Transmission and Distribution Cables under Normal and Fault Conditions
2021
In this article, a review of the existing special bonding techniques for medium voltage and high-voltage cables is presented. Special bonding techniques have the purpose of reducing sheath currents, thereby limiting copper losses and the reduction of the ampacity of cables. The literature review shows various bonding techniques and how these have evolved over the years thanks to new technologies. Simulations of each technique are performed in MATLAB/Simulink, to compare their strengths and drawbacks both under normal conditions and in the presence of a single-line-to-ground fault.
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
2012
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip
2021
Abstract The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the active circuitry will allow to build modules with very narrow inactive regions between the sensors. Inactive edge regions of less than 5 μ m to the electronic circuitry could be achieved for 100 μ m thick sensors. The MALTA chip (Cardella et al., 2019) also offers the possibility to transfer data and power directly from chip to chip. Tests have been carried out connecting two MALTA chips directly using ultrasonic wedge wire bonding. Results from lab tests show that the data accumulated in…
Occupational exposure to endocrine disruptors and lymphoma risk in a multi-centric European study
2015
Background: Incidence rates of lymphoma are usually higher in men than in women, and oestrogens may protect against lymphoma. Methods: We evaluated occupational exposure to endocrine disrupting chemicals (EDCs) among 2457 controls and 2178 incident lymphoma cases and subtypes from the European Epilymph study. Results: Over 30 years of exposure to EDCs compared to no exposure was associated with a 24% increased risk of mature B-cell neoplasms (P-trend=0.02). Associations were observed among men, but not women. Conclusions: Prolonged occupational exposure to endocrine disruptors seems to be moderately associated with some lymphoma subtypes. © 2015 Cancer Research UK. All rights reserved.
On the Rigorous Calculation of All Ohmic Losses in Rectangular Waveguide Multi-Port Junctions
2005
In this paper, all ohmic losses effects present in rectangular waveguide multi-port junctions are rigorous and efficiently computed. For this purpose, a new formulation based on the theory of cavities, which provides generalized admittance matrix representations for such junctions, is proposed. To validate this theory, we have successfully compared our results with numerical data of a lossy E-plane T-junction and of a hollow waveguide, as well as with experimental measurements of a real H-plane T-junction.
Measuring charge based quantum bits by a superconducting single-electron transistor
2002
Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a qubit than a normal-metal transistor at the same voltage range. The effect of the superconducting gap is to completely block the current through the transistor when the qubit is in the logical state 1, compared to the mere diminishment of the current in the normal-metal case. The time evolution of the system is solved when the measuring device is driven out of equilibrium and the setting is analysed numerically for parameters accessible by lithographic alu…