Search results for "Elektroni"
showing 10 items of 417 documents
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments
2019
A two-photon absorption technique is used to understand the mechanisms of single-event effects (SEEs) in silicon carbide power metal–oxide–field-effect transistors (MOSFETs) and power junction barrier Schottky diodes. The MOSFETs and diodes have similar structures enabling the identification of effects associated specifically with the parasitic bipolar structure that is present in the MOSFETs, but not the diodes. The collected charge in the diodes varies only with laser depth, whereas it varies with depth and lateral position in the MOSFETs. Optical simulations demonstrate that the variations in collected charge observed are from the semiconductor device structure and not from metal/passiva…
Mechanisms of Electron-Induced Single-Event Latchup
2019
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
2021
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies between 6 and 200 MeV were used at RADiation Effects Facility (RADEF) in Jyvaskyla, Finland, and at Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments (VESPER) in The European Organization for Nuclear Research (CERN), Switzerland. Photon irradiation was also performed in Jyvaskyla. In these irradiation tests, stuck bits originating from electro…
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
2022
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
2023
The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed
0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments
2021
Neutrons with energies between 0.1-10 MeV can significantly impact the Soft Error Rate (SER) in SRAMs manufactured in scaled technologies, with respect to high-energy neutrons. Their contribution is evaluated in accelerator, ground level and avionic (12 km of altitude) environments. Experimental cross sections were measured with monoenergetic neutrons from 144 keV to 17 MeV, and results benchmarked with Monte Carlo simulations. It was found that even 144 keV neutrons can induce upsets due to elastic scattering. Moreover, neutrons in the 0.1-10 MeV energy range can induce more than 60% of the overall upset rate in accelerator applications, while their contribution can exceed 18% in avionics.…
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications
2021
Proton direct ionization from low-energy protons has been shown to have a potentially significant impact on the accuracy of prediction methods used to calculate the upset rates of memory devices in space applications for state-of-the-art deep sub-micron technologies. The general approach nowadays is to consider a safety margin to apply over the upset rate computed from high-energy proton and heavy ion experimental data. The data reported here present a challenge to this approach. Different upset rate prediction methods are used and compared in order to establish the impact of proton direct ionization on the total upset rate. No matter the method employed the findings suggest that proton dir…
Proton irradiation-induced reliability degradation of SiC power MOSFET
2023
The effect of 53 MeV proton irradiation on the reliability of silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress was applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. The applied drain voltage during irradiation affects the degradation probability observed by TDDB tests. Proton-induced single event burnouts (SEB) were observed for devices which were biased close to their maximum rated voltage. The secondary particle production as a result of primary proton interaction with the device material was simulated with the Geant4-based toolkit. peerReviewed
The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment
2020
International audience; The pion resonance in the nuclear reaction cross section is seen to have a direct impact on the single-event effect (SEE) cross section of modern electronic devices. This was experimentally observed for single-event upsets and single-event latchup. Rectangular parallelepiped (RPP) models built to fit proton data confirm the existence of the pion SEE cross-section resonance. The impact on current radiation hardness assurance (RHA) soft error rate (SER) predictions is, however, minimal for the accelerator environment since this is dominated by high neutron fluxes. The resonance is not seen to have a major impact on the high-energy hadron equivalence approximation estab…