Search results for "Epitaxy"
showing 10 items of 287 documents
Metal doping effects in NIR Raman spectra of YBCO epitaxial films
1996
Metal doping (Co, Zn) of YBCO epitaxial thin films leads to large changes of the scattering efficiencies of various lattice modes in near-infrared (NIR) -Raman spectra (1064 nm) if it is accompanied by a variation of the charge carrier concentration. The results resemble earlier observations in oxygen depleted YBCO thin films. In contrast, no effect is found when metal doping does not change the carrier concentration even if it leads to a massive Tc suppression.
Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
1997
Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…
Chemical characterization of gallium droplets grown by LP-MOCVD.
2006
International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
Oxidation of magnesia-supported Pd-clusters leads to the ultimate limit of epitaxy with a catalytic function
2005
Oxide-supported transition-metal clusters and nanoparticles have attracted significant attention owing to their important role as components of model catalysts, sensors, solar cells and magnetic recording devices. For small clusters, functionality and structure are closely interrelated. However, knowledge of the structure of the bare cluster is insufficient as the interaction with the chemical environment might cause drastic structural changes. Here we show by ab initio simulations based on the density functional theory that the reaction with molecular oxygen transforms small, non-crystalline, magnesia-supported Pd-clusters to crystalline Pd(x)O(y) nano-oxide clusters that are in epitaxy wi…
Alumina particle reinforced TiO2 composite films grown by direct liquid injection MOCVD
2014
Abstract The use of a liquid injection delivery system to form composite films containing nanoparticles was investigated. Al 2 O 3 –TiO 2 films were grown on silicon substrates by direct liquid injection MOCVD (DLI-MOCVD) at 400 °C. The α-Al 2 O 3 nanoparticles (α-Al 2 O 3 NPs) dispersed in TiO 2 films resulted from co-deposition using colloidal α-Al 2 O 3 solution and titanium tetraisopropoxide as titanium precursor. Scanning electron microscopy coupled with EDS as well as Raman spectroscopy confirmed the presence of α-Al 2 O 3 NPs aggregates embedded in the TiO 2 matrix. The liquid injection system coupled with CVD technique can be promising to form composite films containing preformed na…
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
2000
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…
Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
2014
In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content i…
Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap
2012
We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.
First InGaN/GaN thin Film LED using SiCOI engineered substrate
2006
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…
The synthesis of matrices of embedded semiconducting nanowires.
2004
In this work we report how single crystal nanowires can be assembled into regular arrays using mesoporous thin films to define the architecture. Mesoporous thin films were prepared by a sol-gel method. These provide films of very regular structure and dimensions. The films produced in this way have almost single crystal like structures and can also exhibit strong epitaxy to the underlying silicon substrate. The films are subjected to a supercritical fluid (SCF) environment in which a precursor is decomposed to yield nanowires of metals, semiconductors or oxides. Using these SCF conditions, pore filling is complete and the products are nanowires which are single crystals and structurally ali…