Search results for "Gall"
showing 10 items of 903 documents
Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices
2011
We present in this work the characterization studies carried on GaN — thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
2004
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
Synthesis of self-assembled α-GaOOH microrods and 3D hierarchical architectures with flower like morphology and their conversion to α-Ga2O3
2015
Abstract This report reveals the methodology for the fabrication of α-GaOOH micro rods and micro flowers from gallium nitrate with two different complexing agents. α-GaOOH self-assembled 3D hierarchical architecture, comprising of nanorods and nanoribbbons with a flower like morphology, is fabricated under benign hydrothermal conditions. Calcination of α-GaOOH results in formation of α-Ga 2 O 3 with the retention of morphology. Both gallium oxyhydroxide and gallium oxide microstructures were analyzed with SEM, EDX, TEM and powder X-ray diffraction. α-Ga 2 O 3 micro flowers are furnished with nanorods having ordered diamond like cross section with a diagonal length proportion of 2:1. The hyd…
Characterization of Crystalline Structure and Morphology of Ga<sub>2</sub>O<sub>3</sub> Thin Film Grown by MOCVD Technique
2016
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
Structural and Electrical Transport Properties of Si doped GaN nanowires
2016
The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…
Fiber Characterization Using Whispering Gallery Modes(Invited)
2019
Fiber whispering gallery modes (WGMs) are surface waves that propagate azimuthally along the outer surface of the fiber cladding. Those waves that are in phase every turn give rise to narrow resonances defined by the resonant wavelength and a high Q factor. The actual values of the resonant wavelengths depend on the radius and the refractive index of the fiber cladding, enabling the development of several fiber characterization techniques. In addition, the typical high Q factor of these resonances (Q > 106) provides the characterization techniques with a low detection limit. Here, we report the development of a technique for measuring temperature profiles along the optical fiber, which enab…
Parametrical study of multilayer structures for CIGS solar cells
2014
In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill fa…
Photoluminescence study of excitons in homoepitaxial GaN
2001
High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free- and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, EG(4.3 K) = 3.506 eV, can be given. From the donor bound excitons and their “two-electron” satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the ele…
Ultrahigh-Q Tunable Whispering-Gallery-Mode Microresonator
2009
Typical microresonators exhibit a large frequency spacing between resonances and a limited tunability. This impedes their use in a large class of applications which require a resonance of the microcavity to coincide with a predetermined frequency. Here, we experimentally overcome this limitation with highly prolate-shaped whispering-gallery-mode "bottle microresonators" fabricated from standard optical glass fibers. Our resonators combine an ultra-high quality factor of 360 million, a small mode volume, and near lossless fibre coupling, characteristic of whispering-gallery-mode resonators, with a simple and customizable mode structure enabling full tunability.
Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses
1997
A nonlinear optical effect is shown to occur in gallium and indium selenides at photon energies of the order of 1.5 eV. It corresponds to transitions from a lower-energy valence band to the uppermost one when a nonequilibrium degenerate hole gas is created in the latter by a laser pulse. This inter-valence-band transition is allowed by crystal symmetry. Its oscillator strength is estimated through the $f$-sum rule and turns out to be about two orders of magnitude higher than that of the fundamental transition. The intensity of this effect is stronger when the pump pulse photon energy is close to that of the inter-valence-band transition; a condition that can be fulfilled only in indium sele…