Search results for "Gate"
showing 10 items of 1811 documents
Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films
2008
The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir–Schafer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular st…
Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide
2001
Metal-oxide-semiconductor capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers are presented and investigated by transmission electron microscopy and electrical measurements. The grain size distribution and the amount of crystallized silicon remaining in SRO after annealing have been studied by transmission electron microscopy, whereas the charge trapping and the charge transport through the dots in the SRO layer have been extensively investigated by electrical measurements. Furthermore, a model, which explains the electrical behavior of such SRO capacitors, is presented and discussed. © 2001 American Institute of …
Effect of high-k materials in the control dielectric stack of nanocrystal memories
2004
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
Silicon Single Electron Transistors with Single and Multi Dot Characteristics
2000
AbstractSilicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics o…
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Conductive Fused Porphyrin Tapes on Sensitive Substrates by a Chemical Vapor Deposition Approach.
2019
Abstract Oxidative polymerization of nickel(II) 5,15‐diphenyl porphyrin and nickel(II) 5,15‐bis(di‐3,5‐tert‐butylphenyl) porphyrin by oxidative chemical vapor deposition (oCVD) yields multiply fused porphyrin oligomers in thin film form. The oCVD technique enables one‐step formation, deposition, and p‐doping of conjugated poly(porphyrins) coatings without solvents or post‐treatments. The decisive reactions and side reactions during the oCVD process are shown by high‐resolution mass spectrometry. Owing to the highly conjugated structure of the fused tapes, the thin films exhibit an electrical conductivity of 3.6×10−2 S cm−1 and strong absorption in the visible to near‐infrared spectral regio…
Stacking as a key property for creating nanoparticles with tunable shape: The case of squalenoyl-doxorubicin
2019
The development of elongated nanoparticles for drug delivery is of growing interest in recent years, due to longer blood circulation and improved efficacy compared to spherical counterparts. Squalenoyl-doxorubicin (SQ-Dox) conjugate was previously shown to form elongated nanoparticles with improved therapeutic efficacy and decreased toxicity compared to free doxorubicin. By using experimental and computational techniques, we demonstrate here that the specific physical properties of SQ-Dox, which include stacking and electrostatic interactions of doxorubicin as well as hydrophobic interactions of squalene, are involved in the formation of nanoassemblies with diverse elongated structures. We …
Supramolecular Order of Solution-Processed Perylenediimide Thin Films
2011
N,N ′ -1 H ,1 H -perfl uorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2 ), a soluble and air stable n-type molecule, undergoes signifi cant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge-on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF-CN 2 molecules. The presence of a pronounced π– π stacking is confi rmed by combining near-edge X-ray absorption fi ne structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measure…
Cancer phototherapy in living cells by multiphoton release of doxorubicin from gold nanospheres
2020
Doxorubicin is a widely used but toxic cancer chemotherapeutic agent. In order to localize its therapeutic action and minimize side effects, it was covalently conjugated to peptide-encapsulated gold nanospheres by click-chemistry and then photo-released in a controlled fashion by a multiphoton process. Selective treatment of a chosen region in a 2D layer of U2Os cancer cells is shown by driving photorelease with 561 nm irradiation at mu W power. These results show promising directions for the development of practical applications based on nanocarriers that can ensure drug delivery with high spatial and temporal control.
Assessing Radiation Hardness of SIC MOS Structures
2018
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.