Search results for "MAGNETRON"

ZnO plāno kārtiņu izgatavošana pie zemām temperatūrām ar reaktīvo magnetrono izputināšanas metodi un to raksturošana

2017

Darbā tika izgatavotas cinka oksīda (ZnO) plānās kārtiņas ar reaktīvo magnetrono izputināšanas metodi pie zemām temperatūrām. Šim nolūkam vakuuma iekārta tika aprīkota ar dzesētāju. Paraugu struktūra tika pētīta ar XRD, FTIR spektroskopiju, tika mērīta gaismas absorbcija. Iegūtie mērījumu dati tika analizēti atkarībā no dažādiem parametriem (temperatūra, kārtiņas biezums, u.c.). Rezultāti tika salīdzināti ar ZnO plānajām kārtiņām, kas izgatavotas bez pamatnes dzesēšanas, kā arī pie paaugstinātas temperatūras. Literatūrā nav viennozīmīgas informācijas par amorfu ZnO plāno kārtiņu īpašībām, kamēr kristāliska ZnO plānās kārtiņas ir plaši izpētītas. Līdz ar to amorfu ZnO kārtiņu izgatavošana ar…

Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices

2015

Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for energy applications. In this work, we report an efficient tuning mechanism of the light harvesting and detection of Ge QDs. Thin films of SiGeO alloys, produced by rf-magnetron sputtering, were annealed at 600 degrees C in N-2 to induce precipitation of small amorphous Ge QDs into the oxide matrix. Varying the Ge content, the QD size was tailored between 2 and 4 nm, as measured by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy (XPS) measurements indicate the formation of pure SiO2, as well as the presence of a sub-stoichiometric Ge oxide shell at the QD interface. Light …

Optical Plasma Diagnostics During Reactive Magnetron Sputtering

2008

TCO/Ag/TCO transparent electrodes for solar cells application

2014

Among transparent electrodes, transparent conductive oxides (TCO)/metal/TCO structures can achieve optical and electrical performances comparable to, or better than, single TCO layers and very thin metallic films. In this work, we report on thin multilayers based on aluminum zinc oxide (AZO), indium tin oxide (ITO) and Ag deposited by RF magnetron sputtering on soda lime glass at room temperature. The TCO/Ag/TCO structures with thicknesses of about 50/10/50 nm were deposited with all combinations of AZO and ITO as top and bottom layers. While the electrical conductivity is dominated by the Ag intralayer irrespective of the TCO nature, the optical transmissions show a dependence on the natur…

Preparation and x-ray pole-figure characterization of DC-sputtered Bi-2201, Bi-2212 and Bi-2223 thin films

1997

Thin films of the three members of the superconducting series , n = 1,2,3, were prepared by diode sputtering. X-ray characterization shows that all the films are single phase and c-axis oriented and in addition they are epitaxially grown. The latter is found by x-ray pole-figure measurements taken with a four-circle diffractometer. These are emphasized in this work. AC susceptibility measurements show that, while the 2201 films are not superconducting until 4 K, the transition temperatures of the 2212 films are 82 K - 90 K and of the 2223 films 84 K - 89 K.

Growth of metal/oxide periodic multilayer : relation between structure and electrical behaviour in systems based on titanium and tungsten

2014

Periodic multilayers have found many applications in the fields of optics, mechanics or electronics. However, few studies focus on the electrical responses of the metal/oxide periodic structures versus temperature. The interest of this work was focused on the characterization of the multilayers and their electrical properties versus temperature. In TiO/Ti/TiO/TiO2 and WO/W/WO/WO3 systems produced by the reactive gas pulsing process, sample structures were established by transmission electron microscopy for sublayers thicknesses between 1.3 and 50.8 nm. Then, this study highlights a modification of conventional electrical behavior versus temperature. An empirical relationship was established…

Amorphous p-Type Conducting Zn-x Ir Oxide (x > 0.13) Thin Films Deposited by Reactive Magnetron Cosputtering

2021

Zinc-iridium oxide (Zn-Ir-O) thin films have been demonstrated as a p-type conducting material. However, the stability of p-type conductivity with respect to chemical composition or temperature is still unclear. In this study we discuss the local atomic structure and the electrical properties of Zn-Ir-O films in the large Ir concentration range. The films are deposited by reactive DC magnetron co-sputtering at two different substrate temperatures-without intentional heating and at 300 {\deg}C. Extended X-ray absorption fine structure (EXAFS) analysis reveals that strongly disordered ZnO4 tetrahedra are the main Zn complexes in Zn-Ir-O films with up to 67.4 at% Ir. As the Ir concentration in…

Structure and composition of sputter-deposited nickel-tungsten oxide films

2011

Films of mixed nickel-tungsten oxide, denoted NixW1-x oxide, were prepared by reactive DC magnetron co-sputtering from metallic targets and were characterized by Rutherford backscattering spectrometry. X-ray photoelectron spectroscopy, X-ray diffractometry and Raman spectroscopy. A consistent picture of the structure and composition emerged, and at x<0.50 the films comprised a mixture of amorphous WO3 and nanosized NiWO4, at x = 0.50 the nanosized NiWO4 phase was dominating, and at x>0.50 the films contained nanosized NiO and NiWO4.

Augsti jonizētas pulsējošas plazmas magnetrono izputināšanas procesu izstrāde volframa oksīdu plāno kārtiņu iegūšanai

2015

Elektrohromie materiāli spēj mainīt krāsu, elektrohromajai šūnai pieliekot elektrisko spriegumu. Šī īpašība ir ar plašu pielietojumu klāstu, piemēram, ēku energoefektivitātes uzlabošana, taču tie ir dārgi un daudzās jomās pagaidām ekonomiski neizdevīgi. Volframa trioksīda (WO3) plānās kārtiņas ir viens no visvairāk pētītajiem elektrohromajiem materiāliem. Darba mērķis bija izstrādāt augsti jonizētas pulsējošas plazmas magnetronās izputināšanas (HiPIMS) procesu volframa oksīdu plāno kārtiņu iegūšanai un salīdzināt tās ar plānajām kārtiņām, kas iegūtas ar līdzstrāvas magnetrona izputināšanas (DCMS) metodi. Izputināšanas režīms ietekmē gan izputināšanas ātrumu, gan plāno kāriņu elektrohromās ī…