Search results for "Memory."

showing 10 items of 1949 documents

Medium-chain triglycerides may improve memory in non-demented older adults: a systematic review of randomized controlled trials

2022

Abstract Background Ketosis has been exploited for its neuroprotective impact and treatment of neurological conditions via ketone production. Exogenous medium-chain triglyceride (MCT) supplementation may induce nutritional ketosis. The aim of this systematic review is to explore the effects of MCTs on memory function in older adults without cognitive impairment. Methods A systematic literature search of PubMed, Cochrane Library, Scopus, and Web of Science was employed from inception until April 2022 for randomized controlled trials (RCTs) in accordance with the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) guidelines, investigating the impact of MCT oils on com…

Non-demented1106 Human Movement and Sports Sciences1103 Clinical SciencesKetone BodiesKetosisMedium-chain triglyceridesNutritional ketosisMemoryGeriatricsVDP::Medisinske Fag: 700::Klinisk medisinske fag: 750::Geriatri: 778HumansCognitive functionGeriatrics and GerontologyOilsTriglyceridesAgedRandomized Controlled Trials as TopicBMC geriatrics
researchProduct

TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory

2008

We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.

Non-volatile memoryHardware_MEMORYSTRUCTURESComputer scienceNand flash memorybusiness.industryGigabitHardware_ARITHMETICANDLOGICSTRUCTURESbusinessComputer hardwareFlash memoryHardware_LOGICDESIGN2008 IEEE Radiation Effects Data Workshop
researchProduct

Strain-induced improvement of retention loss in PbZr0.2Ti0.8O3 films

2015

The retention behavior of nanoscale domains in PbZr0.2Ti0.8O3 thin films is investigated by in-situ controlling the epitaxial strain arising from a piezoelectric substrate. The retention behavior in our sample shows strong polarity-dependence: Upward-poled domains exhibit excellent stability, whereas downward-poled domains reveal a stretched exponential decay. Reversible release of in-plane compressive strain strongly reduced the retention loss, reflected in an enhancement of the relaxation time by up to one order of magnitude. We tentatively attribute the observed behavior to a strain dependence of the built-in field at the interface to the La0.7Sr0.3MnO3 bottom electrode, with a possible …

Non-volatile memoryMaterials sciencePhysics and Astronomy (miscellaneous)Strain (chemistry)Chemical physicsElectrodeRelaxation (NMR)Exponential decayThin filmFerroelectricityOrder of magnitudeApplied Physics Letters
researchProduct

Nonlinear Analysis of Reinforced Concrete Frames: Safety Evaluation and Retrofitting Techniques

Nonlinear pushover Slope discontinuity Lumped plasticity Externally bonded FRP retrofitting Shape memory alloys micromorphic SMA brace
researchProduct

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018

International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Nuclear and High Energy PhysicsComputer sciencekäyttömuistit02 engineering and technologysingle-event effect01 natural sciencesMemory arrayElectronic mailX-ray0103 physical sciencesElectronic engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic Engineeringstatic testComputingMilieux_MISCELLANEOUSdynamic testEvent (probability theory)Random access memoryta114ta213010308 nuclear & particles physicsbusiness.industrySEFImuistit (tietotekniikka)021001 nanoscience & nanotechnologyFerroelectricityheavy ionsingle-event upsetNon-volatile memoryFRAMsäteilyfysiikkaNuclear Energy and EngineeringSingle event upsetPhotonics0210 nano-technologybusinessIEEE Transactions on Nuclear Science
researchProduct

Methodologies for the Statistical Analysis of Memory Response to Radiation

2016

International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.

Nuclear and High Energy PhysicsEngineeringHardware_PERFORMANCEANDRELIABILITYRadiation[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]01 natural sciencesstatistical analysis0103 physical sciencesStatic testingElectronic engineeringmemory responseStatistical analysisSensitivity (control systems)Static random-access memoryElectrical and Electronic Engineeringstatic testCluster of bit-flipsdynamic test010302 applied physicsSingle event upset SEURandom access memoryta114ta213010308 nuclear & particles physicsbusiness.industrymultiple cell upset (MCU)säteilySRAMReliability engineeringradiationNuclear Energy and EngineeringSingle event upsetradiation effectsbusiness[MATH.MATH-NA]Mathematics [math]/Numerical Analysis [math.NA]Dynamic testing
researchProduct

From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

2008

The reference SEU Monitor system designed and presented in 2005 (R. H. SOslashrensen, F.-X. Guerre, and A. Roseng ldquoDesign, testing and calibration of a reference SEU monitor system,rdquo in Proc. RADECS, 2005, pp. B3-1-B3-7) has now been used by many researchers at many radiation test sites and has provided valuable calibration data in support of numerous projects. As some of these findings and results give new insight into improved inter-facility calibrations and provide additional inputs into ongoing SEE research, a few of the more interesting cases are presented. Furthermore the dasiadetector elementpsila, the Atmel AT60142F SRAM, now in a hybrid configuration, will form the key dete…

Nuclear and High Energy PhysicsEngineeringbusiness.industryDetectorOn boardRadiation testingNuclear Energy and EngineeringSingle event upsetCalibrationKey (cryptography)Electronic engineeringSatelliteStatic random-access memoryElectrical and Electronic EngineeringbusinessComputer hardwareIEEE Transactions on Nuclear Science
researchProduct

Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs

2015

International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.

Nuclear and High Energy PhysicsEngineeringcomputer.software_genreUpsetCross section (physics)Static testingCluster of bit flipsStatic random-access memoryElectrical and Electronic Engineeringradiation testingstatic testCluster analysisdynamic test[PHYS]Physics [physics]single event upset (SEU)ta213ta114Cross sectionbusiness.industrySEFImultiple cell upset (MCU)SRAM[SPI.TRON]Engineering Sciences [physics]/ElectronicsRAMRadiation testingMicrocontrollerMCUNuclear Energy and EngineeringSEU clusterData miningbusinesscomputerDynamic testing
researchProduct

Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

2011

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.

Nuclear and High Energy PhysicsHardware_MEMORYSTRUCTURESMaterials sciencebusiness.industryNAND gateHigh densityFlash (photography)Nuclear Energy and EngineeringLogic gateAbsorbed doseElectronic engineeringOptoelectronicsHeavy ionElectrical and Electronic EngineeringbusinessDegradation (telecommunications)IEEE Transactions on Nuclear Science
researchProduct

Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films

2008

The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystalline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation. © 2008 Elsevier B.V. Al…

Nuclear and High Energy PhysicsMaterials scienceAlloyAnalytical chemistrySurfaces Coatings and FilmReflectivityengineering.materialSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaIonMatrix (chemical analysis)PHASE-CHANGE MATERIALSThermal stabilityIrradiationThin filmSILICONInstrumentationRBSChalcogenideMEMORYSurfaces and InterfacesReflectivityAmorphous solidIon irradiationengineeringDefectStability
researchProduct