Search results for "Metalorganic vapour phase epitaxy"

In Situ Heating TEM Study of Onion-like WS2 and MoS2 Nanostructures Obtained via MOCVD

2007

We report on the in situ heating transmission electron microscopy (TEM) study of WS2 and MoS2 nanoparticles obtained from metal–organic chemical vapor deposition (MOCVD). The general behavior of MoS2 and WS2 is similar: Round, amorphous particles in the pristine sample transform to hollow, onion-like particles upon annealing. A second type of particle with straight layers exhibits only minor changes. A significant difference between both compounds could be demonstrated in their crystallization behavior. The results of the in situ heating experiments are compared to those obtained from an ex situ annealing process under Ar.

ZnO and Related Materials

2019

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

2008

http://link.aip.org/link/?JAPIAU/103/056108/1

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

2015

Abstract In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiN x /Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 ¯ 1 } planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm −1 ) with crystal quality comparable to bu…

Phase mixture in MOCVD and reactive sputtering TiOxNy thin films revealed and quantified by XPS factorial analysis.

2006

Abstract Titanium oxynitride thin films have been deposited by low-pressure metalorganic chemical vapour deposition and reactive sputtering. The growth temperature for chemical vapour-deposited films and water vapour partial pressure for sputter-deposited films have been used to modulate the chemical composition. Both series have been analysed using X-ray photoelectron spectroscopy (XPS) in order to describe the structure of the materials using a factorial analysis approach. Titanium and metalloid concentrations have also been determined and compared to an elemental analysis performed using Rutherford backscattering spectroscopy and nuclear reaction analysis. The two deposition methods led …

MOCVD growth of TiO2 thin films on single crystal GaAs substrates

2000

Abstract TiO 2 thin films have been grown on (100)GaAs and (111)GaAs substrates by low-pressure metal organic chemical vapour deposition (LP-MOCVD). Titanium(IV) isopropoxide, Ti{OCH(CH 3 ) 2 } 4 , was used as a precursor and TiO 2 films were obtained without an additional oxygen flux. Scanning electron microscopy (SEM) experiments have shown a well ordered rod-like crystallisation in the films grown on (100)GaAs. This ordered crystallisation was favoured by a high deposition temperature ( T d =700°C). By contrast, no distinct order was observed in the films grown on (111)GaAs substrates. X-ray diffraction patterns revealed a mainly rutile structure for the TiO 2 films deposited on (100)GaA…

Chemical characterization of gallium droplets grown by LP-MOCVD.

2006

International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.

Alumina particle reinforced TiO2 composite films grown by direct liquid injection MOCVD

2014

Abstract The use of a liquid injection delivery system to form composite films containing nanoparticles was investigated. Al 2 O 3 –TiO 2 films were grown on silicon substrates by direct liquid injection MOCVD (DLI-MOCVD) at 400 °C. The α-Al 2 O 3 nanoparticles (α-Al 2 O 3 NPs) dispersed in TiO 2 films resulted from co-deposition using colloidal α-Al 2 O 3 solution and titanium tetraisopropoxide as titanium precursor. Scanning electron microscopy coupled with EDS as well as Raman spectroscopy confirmed the presence of α-Al 2 O 3 NPs aggregates embedded in the TiO 2 matrix. The liquid injection system coupled with CVD technique can be promising to form composite films containing preformed na…

Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures

2000

Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…

First InGaN/GaN thin Film LED using SiCOI engineered substrate

2006

InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…