Search results for "Radiation effect"
showing 10 items of 111 documents
Production of mass-separated Erbium-169 towards the first preclinical in vitro investigations
2021
The β−-particle-emitting erbium-169 is a potential radionuclide toward therapy of metastasized cancer diseases. It can be produced in nuclear research reactors, irradiating isotopically-enriched 168Er2O3. This path, however, is not suitable for receptor-targeted radionuclide therapy, where high specific molar activities are required. In this study, an electromagnetic isotope separation technique was applied after neutron irradiation to boost the specific activity by separating 169Er from 168Er targets. The separation efficiency increased up to 0.5% using resonant laser ionization. A subsequent chemical purification process was developed as well as activity standardization of the radionuclid…
Technology Impact on Neutron-Induced Effects in SDRAMs : A Comparative Study
2021
International audience; This study analyses the response of synchronous dynamic random access memories to neutron irradiation. Three different generations of the same device with different node sizes (63, 72, and 110 nm) were characterized under an atmospheric-like neutron spectrum at the ChipIr beamline in the Rutherford Appleton Laboratories, UK. The memories were tested with a reduced refresh rate to expose more single-event upsets and under similar conditions provided by a board specifically developed for this type of study in test facilities. The board has also been designed to be used as a nanosatellite payload in order to perform similar tests. The neutron-induced failures were studi…
Effects of high-energy electrons in advanced NAND flash memories
2016
We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.
Methodologies for the Statistical Analysis of Memory Response to Radiation
2016
International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.
Application and development of ion-source technology for radiation-effects testing of electronics
2017
Abstract Studies of heavy-ion induced single event effect (SEE) on space electronics are necessary to verify the operation of the components in the harsh radiation environment. These studies are conducted by using high-energy heavy-ion beams to simulate the radiation effects in space. The ion beams are accelerated as so-called ion cocktails, containing several ion beam species with similar mass-to-charge ratio, covering a wide range of linear energy transfer (LET) values also present in space. The use of cocktails enables fast switching between beam species during testing. Production of these high-energy ion cocktails poses challenging requirements to the ion sources because in most laborat…
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Radiation tolerance of NROM embedded products
2010
Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for b…
Radiation Characterization of Optical Frequency Domain Reflectometry Fiber-Based Distributed Sensors
2016
International audience; We studied the responses of fiber-basedtemperature and strain sensors related to Optical FrequencyDomain Reflectometry (OFDR) and exposed to high γ-ray dosesup to 10 MGy. Three different commercial fiber classes areused to investigate the evolution of OFDR parameters withdose, thermal treatment and fiber core/cladding composition.We find that the fiber coating is affected by both thermal andradiation treatments and this modification results in anevolution of the internal stress distribution inside the fiber that influences its temperature and strain Rayleigh coefficients. These two environmental parameters introduce a relative error up to 5% on temperature and strain…
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.