Search results for "adiation effects"
showing 10 items of 97 documents
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Radiation Characterization of Optical Frequency Domain Reflectometry Fiber-Based Distributed Sensors
2016
International audience; We studied the responses of fiber-basedtemperature and strain sensors related to Optical FrequencyDomain Reflectometry (OFDR) and exposed to high γ-ray dosesup to 10 MGy. Three different commercial fiber classes areused to investigate the evolution of OFDR parameters withdose, thermal treatment and fiber core/cladding composition.We find that the fiber coating is affected by both thermal andradiation treatments and this modification results in anevolution of the internal stress distribution inside the fiber that influences its temperature and strain Rayleigh coefficients. These two environmental parameters introduce a relative error up to 5% on temperature and strain…
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
2019
IEEE Transactions on Nuclear Science, 66 (7)
Radiation effects on silica-based preforms and optical fibers-II: Coupling ab initio simulations and experiments
2008
International audience; Abstract—Experimental characterization through electron paramagnetic resonance (EPR) and confocal luminescence microscopy (CML) of a Ge-doped glass (preform and fiber) reveals the generation of several point defects by 10 keV X-ray radiation-induced attenuation: GeE', Ge(1), Ge(2), and Ge-ODC. The generation mechanisms of Ge-ODC and charged defects like GeE' centers are studied through ab initio simulation. Our calculations used a 108 atom supercell with a glass composition comparable to the Ge-doped core or to the pure-silica cladding of the canonical sample. The large size of our cell allows us to study the influence of the local environment surrounding the X-ODC d…
Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers
2013
International audience; We investigate the response of Ge-doped, P-doped, pure-silica, or Fluorine-doped fibers to extreme environments combining doses up to MGy(SiO $_{{{2}}}$) level of 10 keV X-rays and temperatures between 25 C and 300 C . First, we evaluate their potential to serve either as parts of radiation tolerant optical or optoelectronic systems or at the opposite, for the most sensitive ones, as punctual or distributed dosimeters. Second, we improve our knowledge on combined ionizing radiations and temperature (R&T) effects on radiation-induced attenuation (RIA) by measuring the RIA spectra in the ultraviolet and visible domains varying the R&T conditions. Our results reveal the…
Steady-State X-Ray Radiation-Induced Attenuation in Canonical Optical Fibers
2020
The so-called canonical optical fibers (OFs) are samples especially designed to highlight the impact of some manufacturing process parameters on the radiation responses. Thanks to the results obtained on these samples, it is thus possible to define new procedures to better control the behaviors of OFs in radiation environments. In this article, we characterized the responses, under steady-state X-rays, of canonical samples representative of the most common fiber types differing by their core-dopants: pure silica, Ge, Al, and P. Their radiation-induced attenuation (RIA) spectra were measured online at both room temperature (RT) and liquid nitrogen temperature (LNT), in the energy range [~0.6…
Transient and Steady-State Radiation Response of Phosphosilicate Optical Fibers: Influence of H2 Loading
2019
The radiation response of a phosphorus-doped multimode optical fiber is investigated under both transient (pulsed X-rays) and steady-state ( $\gamma $ - and X-rays) irradiations. The influence of a H2 preloading on the fiber radiation-induced attenuation (RIA) in the 300–2000-nm wavelength range has been characterized. To better understand the impact of this treatment, online behaviors of fiber samples containing different amounts of gas are compared from glass saturation (100%) to less than 1%. In addition to these in situ experiments, additional postirradiation spectroscopic techniques have been performed such as electron paramagnetic resonance or luminescence measurements to identify the…
Transient Radiation Responses of Optical Fibers: Influence of MCVD Process Parameters
2012
International audience; A dedicated set of fibers elaborated via the Modified Chemical Vapor Deposition (MCVD) technique is used to study the influence of composition and drawing parameters on their responses to an X-ray pulse representative of the radiation environments associated with Megajoule class lasers. These canonical fibers were designed to highlight the impact of these parameters on the amplitude and kinetics of the transient pulsed X-ray Radiation Induced Attenuation (RIA) at room temperature. From preforms differing by their core composition, three optical fibers were elaborated by varying the tension and speed during the drawing process. No or only slight RIA change results fro…