Search results for "chemical vapor deposition"
showing 10 items of 199 documents
Metal–organic covalent network chemical vapor deposition for gas separation
2016
The chemical vapor deposition (CVD) polymerization of metalloporphyrin building units is demonstrated to provide an easily up-scalable one-step method toward the deposition of a new class of dense and defect-free metal–organic covalent network (MOCN) layers. The resulting hyper-thin and flexible MOCN layers exhibit outstanding gas-separation performances for multiple gas pairs.
Nano-composite thermochromic thin films and their application in Energy-efficient glazing
2010
A hybrid atmospheric pressure and aerosol-assisted chemical vapour deposition strategy is presented as a facile route for the production of vanadium dioxide nano-composite thin films. The effect of the inclusion of gold nanoparticles and the use of a surfactant molecule, tetraoctylammonium bromide, is discussed. The films were fully characterised using a wide variety of techniques, including scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and UV/vis/NIR spectroscopy. It is shown that micro-structural changes brought about by careful control of film growth conditions, and/or the use of surfactant, lead to an enhancement of thermochromic properties. Gold nano…
Memory effects in MOS capacitors with silicon quantum dots
2001
To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers …
Effect of Growth Temperature on the Structural and Morphological Properties of MgCdO Thin Films Grown by Metal Organic Chemical Vapor Deposition
2017
II-VI oxides ternary alloys have attracted considerable interest of the scientific community due to the possibility of modulating their interesting optoelectronic properties. Despite this interest, MgCdO has been poorly studied. In this work, by using the metal organic chemical vapor deposition method at low pressure, we have analyzed the synthesis of thin films of this alloy. Thus, for a fixed metal-organic precursors content, a change from Mg1-xCdxO (Mg-rich phase) to Cd1-xMgxO (Cd-rich phase) has been induced when decreasing the growth temperature. The temperature range where both phases coexist has been particularly analyzed. Using X-ray diffraction analysis and scanning electron micros…
MOCVD growth of TiO2 thin films on single crystal GaAs substrates
2000
Abstract TiO 2 thin films have been grown on (100)GaAs and (111)GaAs substrates by low-pressure metal organic chemical vapour deposition (LP-MOCVD). Titanium(IV) isopropoxide, Ti{OCH(CH 3 ) 2 } 4 , was used as a precursor and TiO 2 films were obtained without an additional oxygen flux. Scanning electron microscopy (SEM) experiments have shown a well ordered rod-like crystallisation in the films grown on (100)GaAs. This ordered crystallisation was favoured by a high deposition temperature ( T d =700°C). By contrast, no distinct order was observed in the films grown on (111)GaAs substrates. X-ray diffraction patterns revealed a mainly rutile structure for the TiO 2 films deposited on (100)GaA…
Vacuum arc deposition of protective layers on glass and polymer substrates
2001
Abstract Vacuum arc deposition allows one to deposit various coatings on insulating and temperature-sensitive substrates (like polymers). An advantage of the vacuum arc deposition technique is the low substrate temperature during the deposition process. A vacuum arc deposition apparatus for the coating of large-area substrates has been developed. Ti, TiN, TiO 2 and diamond-like single and multilayer coatings have been deposited on plastic and glass substrates. The vacuum arc technology permits formation of multilayer colour filters of high uniformity on substrates with dimensions up to 2000×1400 mm 2 . The microstructure, chemical composition and optical properties of the deposited coatings…
Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides
2018
Producción Científica
Perovskite thin films grown by direct liquid injection MOCVD
2007
Abstract The continuous scaling down of devices dimensions, in silicon technology, imposes to replace silicon dioxide. Among the potential candidates for new capacitors, some perovskite structure materials (such as titanate or zirconate) show interesting characteristics. The first way to develop perovskite films is to use a mixture of two β-diketonates by varying the solution's cationic ratio. However, our previous results on SrZrO3 showed that a wide parametric study had to be carried on. Another way is to design novel heterometallic precursors that contain both cations on the same molecule. The ligands could be chosen so that peculiar evaporation and decomposition temperatures could be ob…
Chemical characterization of gallium droplets grown by LP-MOCVD.
2006
International audience; This study is concerned with the chemical characterization of metallic gallium droplets, obtained on silicon (1 0 0) substrates with a single growth step, by the LP-MOCVD technique with TMGa like precursor. These structures are characterized by SIMS, XPS and TEM. The analyses results lead to a structure proposition for the droplets. The core is composed of metastable metallic gallium with a non-negligible carbon quantity probably coming from incomplete precursor decomposition. The outer part, composed of gallium oxide maintains the structure stability. Covering of the substrate by a thin gallium layer of gallium compounds is observed.
Interface of Silicon Nitride Nanolayers with Oxygen Deficiency
2018
Multilayer Si 3 N 4 consisting of Si 3 N 4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si 3 N 4 , the multilayer Si 3 N 4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si 3 N 4 dielectric.