Search results for "current"
showing 10 items of 2224 documents
Combining data from high-energy p p -reactions and neutrinoless double-beta decay: Limits on the mass of the right-handed boson
2016
From the recently established lower-limits on the nonobservability of the neutrinoless double-beta decay of 76Ge (GERDA collaboration) and 136Xe (EXO-200 and KamLAND-Zen collaborations), combined with the ATLAS and CMS data, we extract limits for the left-right (LR) mixing angle, of the SU(2)L ×SU(2)R electroweak Hamiltonian. For the theoretical analysis, which is a model dependent, we have adopted a minimal extension of the Standard Model (SM) of Electroweak Interactions belonging to the SU(2)L ×SU(2)R representation. The nuclear-structure input of the analysis consists of a set of matrix elements and phase-space factors, and the experimental lower-limits for the half-lives. The other inpu…
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
The MARA-LEB ion transport system
2020
Abstract A low-energy branch is under development for the MARA vacuum-mode recoil separator at the Accelerator Laboratory of the University of Jyvaskyla. This development will allow for the study of proton-rich nuclei through laser ionisation spectroscopy and mass measurements. After stopping and extraction from a buffer gas cell, the ions of interest will be accelerated and transported to dedicated experimental setups by an ion transport system consisting of several focusing, accelerating and mass-separating elements. This article presents the current design and simulations for the ion transport.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
2019
IEEE Transactions on Nuclear Science, 66 (7)
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
Charged-current neutrino-nucleus scattering off the even molybdenum isotopes
2012
Neutrinos from supernovae constitute important probes of both the currently unknown supernova mechanisms and of neutrino properties. Reliable information about the nuclear responses to supernova neutrinos is therefore crucial. In this work, we compute the cross sections for the charged-current neutrino-nucleus scattering off the even-even molybdenum isotopes. The nuclear responses to supernova neutrinos are subsequently calculated by folding the cross sections with a Fermi-Dirac distribution.
Measurement of the B-0 -> K*(0) e(+) e(-) branching fraction at low dilepton mass
2013
The branching fraction of the rare decay B-0 -> K*(0) e(+) e(-) in the dilepton mass region from 30 to 1000 MeV/c(2) has been measured by the LHCb experiment, using pp collision data, corresponding to an integrated luminosity of 1.0 fb(-1), at a centre-of-mass energy of 7 TeV. The decay mode B-0 -> J/psi (e(+) e(-)) K*(0) is utilized as a normalization channel. The branching fraction B(B-0 -> K*(0) e(+) e(-)) is measured to be B(B-0 -> K*(0) e(+) e(-))(30-1000 MeV/c2) = (3.1(-0.8)(-0.3)(+0.9)(+0.2) +/- 0.2) x 10(-7) where the fi rst error is statistical, the second is systematic, and the third comes from the uncertainties on the B-0 -> J/K*(0) and J/psi -> e(+) e(-) branching fractions.