Search results for "schottky"
showing 10 items of 109 documents
Solar blind AlGaN photodetectors with a very high spectral selectivity
2006
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
Electronic properties and mobile defects distribution in amorphous semiconducting passive films
2003
A study of the electronic properties of thin (drop 25 nm) a-WO3 and a-Nb2O5 is presented. Based on theory of amorphous semiconductor Schottky barrier the fitting of admittance curves in a large range of electrode potential (around 9 V) and a.c. frequency (100 Hz - 10 kHz) is performed. A density of electronic state distribution (DOS) is derived, which mimics the mobile defects distribution suggested by the classical high field model of oxides growth.
Atomic scale DFT simulations of point defects in uranium nitride
2007
Atomic scale density functional calculations are used to predict the behaviour of defects in uranium mononitride (UN). Two different density functional codes (VASP and CASTEP) were employed with supercells containing from 8 to 250 atoms (providing a significant range of defect concentrations). Schottky and nitrogen Frenkel point defect formation energies, local lattice relaxations and overall lattice parameter change, as well as the defect induced electronic density redistribution, are discussed.
The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti
2017
A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.
Amorphous semiconductor—electrolyte junction. Energetics at the a-WO3—electrolyte junction
1991
In order to elucidate the influence of thickness and amorphous structure on the kinetics of electron exchange with redox couples in solution, a critical re-examination of the energetics at the amorphous anodic WO3 films (a-WO3)—electrolyte junction has been performed, based on a recent theory of amorphous semiconductor (a-SC) Schottky barrier. The admittance study of the barrier performed in a large interval of electrode potential at changing frequency and film thickness allowed the determination of the energy levels as well as the distribution of localized electronic states within the mobility gap of the films. The new energetic picture derived is able to explain some features of the kinet…
Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques
2007
Abstract Thin Nb2O5 anodic films (∼20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
Shape memory NiTi thin films deposited at low temperature
1999
Abstract NiTi shape memory alloy (SMA) thin films have the potential to become high performance actuators for micro-electromechanical systems. Low temperature crystallized NiTi films would ensure a good compatibility with microelectronic processes and polymers. To avoid the drawbacks induced by annealing, we have tried to obtain low temperature crystallized RF sputtered NiTi films by optimising deposition parameters. We have found that NiTi films containing an excess of Ti (∼52%) were crystallized when deposited on Si(100) substrates heated up to only 473 K. NiTi/Si(n) Schottky diodes I–V characteristics showed a temperature dependence indicating structural transition in the NiTi electrode.…
Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors
2016
The transfer characteristics (ID-VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as-prepared devices and after annealing at different temperatures (T-ann from 150 degrees C to 200 degrees C) under a positive bias ramp (V-G from 0 V to + 20 V). Larger T-ann resulted in a reduced hysteresis of the ID-VG curves (from similar to 11 V in the as-prepared sample to similar to 2.5 V after Tann at 200 degrees C). The field effect mobility (similar to 30 cm(2) V-1 s(-1)) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n-type behaviour in the as-prepared device to the…
Corrosion behaviour of a highly alloyed austenitic alloy UB6 in contaminated phosphoric acid
2013
The influence of temperature (20–80°C) on the electrochemical behaviour of passive films anodically formed on UB6 stainless steel in phosphoric acid solution (5.5 M H3PO4) has been examined by using potentiodynamic curves, electrochemical impedance spectroscopy, and Mott-Schottky analysis. UB6 stainless steel in contaminated phosphoric acid is characterised by high interfacial impedance, thereby, illustrating its high corrosion resistance. The obtained results show that the films behave as n-type and p-type semiconductors in the potential range above and below the flat band potential, respectively. This behaviour is assumed to be the consequence of the semiconducting properties of the iron …
Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires
2017
Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.