Search results for "ta213"
showing 10 items of 128 documents
Methodologies for the Statistical Analysis of Memory Response to Radiation
2016
International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.
Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs
2015
International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed
Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers
2018
Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
Characterization of a neutron-beta counting system with beta-delayed neutron emitters
2016
Abstract A new detection system for the measurement of beta-delayed neutron emission probabilities has been characterized using fission products with well known β-delayed neutron emission properties. The setup consists of BELEN-20, a 4π neutron counter with twenty 3He proportional tubes arranged inside a large polyethylene neutron moderator, a thin Si detector for β counting and a self-triggering digital data acquisition system. The use of delayed-neutron precursors with different neutron emission windows allowed the study of the effect of energy dependency on neutron, β and β–neutron rates. The observed effect is well reproduced by Monte Carlo simulations. The impact of this dependency on …
SEE on Different Layers of Stacked-SRAMs
2015
International audience; This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The …
IGISOL control system modernization
2016
Abstract Since 2010, the IGISOL research facility at the Accelerator laboratory of the University of Jyvaskyla has gone through major changes. Comparing the new IGISOL4 facility to the former IGISOL3 setup, the size of the facility has more than doubled, the length of the ion transport line has grown to about 50 m with several measurement setups and extension capabilities, and the accelerated ions can be fed to the facility from two different cyclotrons. The facility has evolved to a system comprising hundreds of manual, pneumatic and electronic devices. These changes have prompted the need to modernize also the facility control system taking care of monitoring and transporting the ion beam…
High voltage conditioning of the electrostatic deflector of MARA
2016
Abstract MARA is a new recoil mass separator in the Accelerator Laboratory of University of Jyvaskyla (JYFL-ACCLAB) with a mass resolving power of 250 and an ion-optical configuration of QQQD E D M . In this paper the construction, control and conditioning of its electrostatic deflector are described. The deflector was designed for voltages up to 500 kV accross the gap, corresponding to a 3.6 MV/m field, to accomodate fusion reactions with inverse kinematics. Titanium electrodes with a beam dump opening in the anode are used. The conditioning procedure, which has been used repeatedly to take the deflector to 450 kV, is described, along with the safety systems and precautions that are in pla…
Classification and retrieval on macroinvertebrate image databases
2011
Aquatic ecosystems are continuously threatened by a growing number of human induced changes. Macroinvertebrate biomonitoring is particularly efficient in pinpointing the cause-effect structure between slow and subtle changes and their detrimental consequences in aquatic ecosystems. The greatest obstacle to implementing efficient biomonitoring is currently the cost-intensive human expert taxonomic identification of samples. While there is evidence that automated recognition techniques can match human taxa identification accuracy at greatly reduced costs, so far the development of automated identification techniques for aquatic organisms has been minimal. In this paper, we focus on advancing …