Search results for "Epitaxy"
showing 10 items of 287 documents
Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films
2011
Abstract Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr 0.5 Hf 0.5 NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr 0.5 Hf 0.5 NiSn at room temperature were measured to be 63 μV K − 1 , 14.1 μΩ m and 0.28 mW K − 2 m − 1 , respectively. Multilayers of TiNiSn and Zr 0.5 Hf 0.5 NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular …
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Unraveling the strain state of GaN down to single nanowires
2016
International audience; GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaN NW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain-defined as [c/a = (c/a)(o)]/(c/a)(o)-within the experimental accuracy amounting to 1.25 x 10(-4). However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substr…
High resolution X-ray diffraction, X-ray multiple diffraction and cathodoluminescence as combined tools for the characterization of substrates for ep…
2013
The goal of this work is to show the capability of X-ray multiple diffraction (XRMD) to be used in combination with high resolution X-ray diffraction (HRXRD) and cathodoluminescence (CL) as an easy and simple methodology to determine structural and surface defect-related characteristics of samples that could be used as substrates for epitaxial growth. For this study ZnO {0001}-oriented samples have been used in view of their use as substrates for homoepitaxy. The miscut and bending of the samples have been analyzed by measuring the position of the X-ray diffraction peaks. The presence of multiple crystallographic domains and their characteristics have been studied by HRXRD (from the allowed…
Growth and characterization of Mg 1‐x Cd x O thin films
2016
In this paper, we study the growth of thin films of the Mg1–xCdxO alloy in the Mg-rich range of compositions by using the metal organic chemical vapour deposition (MOCVD) method at low pressure. X-ray diffraction (XRD) has been used to analyse the compound formation and the progressive incorporation of Cd2+ ions into the cubic MgO lattice. Both, layers with a single-cubic phase of Mg1–xCdxO and layers with a phase separation, where Cd1–xMgxO and Mg1–xCdxO coexist, have been studied. Finally, a morphological study of the layers has been carried out by using scanning electron microscopy (SEM) and the layers' composition has been measured by energy dispersive X-ray analysis (EDX). (© 2016 WILE…
Structural characterization of TiNxOy/TiO2 single crystalline and nanometric multilayers grown by LP-MOCVD on (110)TiO2
2001
TiO2/TiNxOy superlattices were grown by Low Pressure-Metal-Organic Vapor Phase Epitaxy (LP-MOVPE) technique at deposition temperatures ranking from 650 to 750°C. The growth was performed on top of TiO2(110) rutile substrates. Intense peaks observed in the X-rays rocking curves and θ-2θ diffraction patterns show the presence of crystalline epilayers. The TiNxOy layers were grown in a (200) cubic structure on the (110) quadratic TiO2 epilayer structure. Transmission electron microscopy confirmed the XRD results and showed the formation of periodic and well structured epilayers.
CADEM: calculate X-ray diffraction of epitaxial multilayers
2017
This article presents a powerful yet simple program, based on the general one-dimensional kinematic X-ray diffraction (XRD) theory, which calculates the XRD patterns of tailor-made multilayers and thus enables quantitative comparison of measured and calculated XRD data. As the multilayers are constructed layer by layer, the final material stack can be entirely arbitrary.
Vapor growth of Hg1−xCdxI2 on glass using CdTe buffer
2001
Abstract Vapor phase epitaxy (VPE) of Hg1−xCdxI2 layers on glass substrates covered by a CdTe buffer layer has been studied. The buffer layers of 2–4 μm thickness were formed by VPE using polycrystalline CdTe and Cd metal sources. The Hg1−xCdxI2 layers were grown using a (Hg1−yCdy)1−z(I2)z polycrystalline source, with a composition in the range of y=0.1–0.5 and z=0.5–0.8. Scanning electron microscopy and X-ray diffraction studies have shown that the composition and structure of Hg1−xCdxI2 layers depend strongly on the VPE conditions. Varying the growth time and source composition, it has been possible to obtain Hg1−xCdxI2 layers with the composition x in the range from approximately 0 (HgI2…
Preparation of superconducting thin films of UNiAl
2005
Abstract Epitaxial thin films of the unconventional heavy fermion superconductor UNi 2 Al 3 we prepared by coevaporation of the elementary components in a molecular beam epitaxy system (MBE). The phase purity and structural quality of the films deposited on (0 1 0)- or (1 1 2)-oriented YAlO 3 substrates were studied by X-ray diffraction and RHEED. The observed R ( T ) behavior is consistent with data obtained from bulk samples and proves the purity of the films. Superconductivity was found with transition temperature T c =0.97 K.
Structural analysis of CdO layers grown on r-plane sapphire (011¯2) by metalorganic vapor-phase epitaxy
2004
Abstract High-quality fully relaxed CdO layers have been grown directly on r -plane sapphire by metalorganic vapor-phase epitaxy. The crystalline structure has been analyzed by high-resolution X-ray diffraction. The structural quality of the (0 0 1) oriented layers degrades as the growth temperature decreases, process which is accompanied by the appearance of pyramidal grains as revealed by scanning force microscopy. The lattice parameters, perpendicular and parallel to the sample surface, have been determined by means of reciprocal space maps taken on asymmetrical reflections and measurements of symmetrical reflections at different azimuths. The epitaxial relationships between the CdO laye…