Search results for "MOSFET"
showing 10 items of 45 documents
Heavy-Ion Induced Charge Yield in MOSFETs
2009
The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors irradiated with 10-keV X-rays and several different heavy ions. The obtained charge yield for the heavy ions is in average nearly an order of magnitude lower than for the X-rays for the entire range of measured electric fields.
Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
2012
A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
2023
The effect of 20 MeV electron radiation on the lifetime of the silicon carbide power MOSFETs was investigated. Accelerated constant voltage stress (CVS) was applied on the pristine and irradiated devices and time-to-breakdown ( T BD ) and charge-to-breakdown ( Q BD ) of gate oxide were extracted and compared. The effect of electron radiation on the device lifetime reduction can be observed at lower stress gate-to-source voltage ( V GS ) levels. The models of T BD and Q BD dependence on the initial gate current ( I G0 ) are proposed which can be used to describe the device breakdown behaviour. peerReviewed
Dangerous effects induced on power MOSFETs by terrestrial neutrons: A theoretical study and an empirical approach based on accelerated experimental a…
2013
This paper investigates the effects that terrestrial neutrons can induce on power MOSFETs when they are biased during their normal working conditions especially in inverters for photovoltaic applications. After a brief review of power MOSFETs failure phenomena caused by neutron irradiation (with emphasis on so called “Single Event Effects” (SEE)), the results of an accelerated test performed with the Am-Be source at the University of Palermo are discussed.
Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation
2017
N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data.
A Design Methodology for Low-Power MCML Ring Oscillators
2007
In this paper, a low-power design method for MCML based ring oscillators is presented. The proposed method takes into account the parasitic capacitances of the MOS transistors. To validate it, some ring oscillators with different oscillation frequencies were designed in a 0.18 mum CMOS technology. SPICE simulations demonstrate the effectiveness of the design method.
Partial Discharge Behaviour Evaluation on MOSFET Employed in Automotive Applications
2022
This paper is focused on the measurement of partial discharges in the Silicon Carbide MOSFET. The latter represents a recent developed power electronics device, which has improved characteristics compared to the traditional Silicon MOSFET. The new technology has been conceived in order to satisfy the new market needs. With the ever-increasing development of the electric mobility sector, the need for ever more performing electronic power devices grows. The main features provided by the Silicon Carbide device were found in literature and concern a great thermal conductivity, wide bandgap, high power and high working temperature. However, considering the high voltage at which these devices wor…
Estimating Terrestrial Neutron-Induced SEB Cross-Sections and FIT Rates for High-Voltage SiC Power MOSFETs
2019
Cross sections and failure in time rates for neutron-induced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. peerReviewed
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
2020
Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes. peerReviewed