Search results for "Toe"
showing 10 items of 3824 documents
Electronic structure of delta-doped $La:SrTiO_{3}$ layers by hard X-ray photoelectron spectroscopy
2012
We have employed hard x-ray photoemission (HAXPES) to study a delta-doped SrTiO3 layer that consisted of a 3-nm thickness of La-doped SrTiO3 with 6% La embedded in a SrTiO3 film. Results are compared to a thick, uniformily doped La:SrTiO3 layer. We find no indication of a band offset for the delta-doped layer, but evidence of the presence of Ti3+ in both the thick sample and the delta-layer, and indications of a density of states increase near the Fermi energy in the delta-doped layer. These results further demonstrate that HAXPES is a powerful tool for the non-destructive investigation of deeply buried doped layers.
Pre-determining the location of electromigrated gaps by nonlinear optical imaging
2014
In this paper we describe a nonlinear imaging method employed to spatially map the occurrence of constrictions occurring on an electrically-stressed gold nanowire. The approach consists at measuring the influence of a tightly focused ultrafast pulsed laser on the electronic transport in the nanowire. We found that structural defects distributed along the nanowire are efficient nonlinear optical sources of radiation and that the differential conductance is significantly decreased when the laser is incident on such electrically-induced morphological changes. This imaging technique is applied to pre-determined the location of the electrical failure before it occurs.
3d impurities in Al: density functional results
1980
Self-consistent spin density functional calculations have been carried out for 3d transition metal impurities in aluminium. The width of the virtual level decreases as it moves away from the Fermi energy with increasing occupancy. The results are compared with recent XPS measurements.
Dopant-controlled single-electron pumping through a metallic island
2016
We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission
2010
This work reports on hard x-ray photoelectron spectroscopy (HAXPES) of CoFeB based tunnel junctions. Aim is to explain the role of the boron diffusion for the observed improvement of the tunneling magnetoresistance ratio with increasing annealing temperature. The high bulk sensitivity of HAXPES was used as a nondestructive technique to analyze CoFeB–MgO–CoFeB magnetic tunnel junctions. The investigated samples were processed at different annealing temperatures from 523 to 923 K. Hard x-ray core level spectroscopy reveals an enforced diffusion of boron from the CoFeB into the adjacent Ta layer with increasing annealing temperature. The dependence of the tunneling magnetoresistance on the ann…
Graphene Cardboard: from Ripples to Tunable Metamaterial
2014
Recently graphene was introduced with tunable ripple texturing, a nanofabric enabled by graphene's remarkable elastic properties. However, one can further envision sandwiching the ripples, thus constructing composite nanomaterial, graphene cardboard. Here the basic mechanical properties of such structures are investigated computationally. It turns out that graphene cardboard is highly tunable material, for its elastic figures of merit vary orders of magnitude, with Poisson ratio tunable from 10 to -0.5 as one example. These trends set a foundation to guide the design and usage of metamaterials made of rippled van der Waals solids.
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon
2003
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor p…
Polymer-metal waveguides characterization by Fourier plane leakage radiation microscopy
2007
International audience; The guiding properties of polymer waveguides on a thin gold film are investigated in the optical regime. The details of propagation in the waveguides are studied simultaneously in the object and Fourier planes, providing direct measurement of both the real and imaginary parts of the effective index of the guided mode. A fair agreement between theoretical analysis provided by the differential method and experimental leakage radiation microscopy data is shown. All these tools bring valuable information for designing and understanding such devices. (C) 2007 American Institute of Physics.
Detailed balance analysis of area de-coupled double tandem photovoltaic modules
2015
Published version of an article in the journal: Applied Physics Letters. Also available from the publisher at: http://dx.doi.org/10.1063/1.4906602 This paper describes how layers of area de-coupled top and bottom cells in photovoltaic tandem modules can increase the efficiency of two-terminal tandem devices. The point of the area de-coupling is to allow the number of top cells to differ from the number of bottom cells. Within each of the layers, the cells can be horizontally series-connected and the layers can then be currentor voltage-matched with each other in a tandem module. Using detailed balance modeling, it is shown that two-terminal tandem modules of this type can achieve the same t…
Antenna-coupled spintronic terahertz emitters driven by a 1550 nm femtosecond laser oscillator
2019
We demonstrate antenna-coupled spintronic terahertz (THz) emitters excited by 1550 nm, 90 fs laser pulses. Antennas are employed to optimize THz outcoupling and frequency coverage of ferromagnetic/nonmagnetic metallic spintronic structures. We directly compare the antenna-coupled devices to those without antennas. Using a 200 μm H-dipole antenna and an ErAs:InGaAs photoconductive receiver, we obtain a 2.42-fold larger THz peak-peak signal, a bandwidth of 4.5 THz, and an increase in the peak dynamic range (DNR) from 53 dB to 65 dB. A 25 μm slotline antenna offered 5 dB larger peak DNR and a bandwidth of 5 THz. For all measurements, we use a comparatively low laser power of 45 mW from a comme…