Search results for "Transistor"
showing 10 items of 234 documents
Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.
2010
We demonstrate controllable and gate-tunable negative differential resistance in carbon nanotube field-effect transistors, at room temperature and at 4.2 K. This is achieved by effectively creating quantum dots along the carbon nanotube channel by patterning the underlying, high-kappa gate oxide. The negative differential resistance feature can be modulated by both the gate and the drain-source voltage, which leads to more than 20% change of the current peak-to-valley ratio. Our approach is fully scalable and opens up a possibility for a new class of nanoscale electronic devices using negative differential resistance in their operation.
Toward Single Electron Nanoelectronics Using Self-Assembled DNA Structure
2016
DNA based structures offer an adaptable and robust way to develop customized nanostructures for various purposes in bionanotechnology. One main aim in this field is to develop a DNA nanobreadboard for a controllable attachment of nanoparticles or biomolecules to form specific nanoelectronic devices. Here we conjugate three gold nanoparticles on a defined size TX-tile assembly into a linear pattern to form nanometer scale isolated islands that could be utilized in a room temperature single electron transistor. To demonstrate this, conjugated structures were trapped using dielectrophoresis for current-voltage characterization. After trapping only high resistance behavior was observed. However…
High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric
2008
Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trapping in the dielectric layer between the nanotube and the gate. This study includes 94 CNT FET samples, providing an unprecedented basis for statistics on the hysteresis seen in five different CNT-gate configurations. We find that the memory effect can be controlled by carefully designing the gate dielectric in nm-thin layers. By using atomic layer depositions (ALD) of HfO$_{2}$ and T…
Ultra-Low Noise Multiwalled Carbon Nanotube Transistors
2013
We report an experimental noise study of intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube (IS-MWCNT) devices. The noise is two orders of magnitude lower than in singlewalled nanotubes (SWCNTs) and has no length dependence within the studied range. In these channel limited devices with small or negligible Schottky barriers the noise is shown to originate from the intrinsic potential fluctuations of charge traps in the gate dielectric. The gate dependence of normalized noise can be explained better using ballistic the charge noise model rather than diffusive McWhorter’s model. The results indicate that the noise properties of IS-MWCNTs are closer to SWCNTs than th…
Simulation of electronic states in a nanowire field-effect transistor
2015
De acuerdo con la ley empírica de Moore, el número de transistores en un circuito integrado se ve duplicado aproximadamente cada dos años. Una vez traspasada la frontera hacia la escala nanométrica, estos dispositivos comienzan a padecer efectos adversos al funcionamiento deseable de un transistor, como la pérdida de integridad eléctrica, efectos debidos a la corta longitud del canal o la falta de reproducibilidad. Las nanoestructuras cristalinas semiconductoras conocidas como nanohilos están emergiendo como candidatos prometedores para formar una nueva base alternativa de los transistores de efecto campo y continuar la miniaturización tecnológica en la escala nanométrica. Esto es debido al…
Optical and electrochemical DNA nanobiosensors
2011
In the past two decades, nanoscale advanced materials have been explored for biosensing molecules, so new horizons have opened up for identifying and quantifying biomolecules, and possible early diagnosis of diseases. DNA nanobiosensors show promise. This article provides an overview on their optical and electrochemical aspects. We discuss recent progress in this field, describing basic concepts of molecular beacons and quantum dots as optical nano-imaging systems. Also, carbon nanotubes provide a platform for development and advancement of electrochemical DNA nanobiosensors, which are increasingly being implemented as robust tools for detection in biomedical sciences. Refereed/Peer-reviewed
Influence Of The Model Parameters On The Noise Performance Of Double-polysilicon BJTs For Microwave LNA's
1997
In the recent post we have measured the noise and the scattering parameters of several series of double polysilicon BJT's over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. From the experimental data, a noisy circuit model has been extracted based on a T-equivalent network. By means of the correlation matrix techniques, novel analytical expressions of the noise parameters have been derived. As a second step, a sensitivity analysis has been performed for evaluating the influence of each model element on the noise performance. The results show how to improve the characteristics of such devices for a better performance when employe…
Temperature Dependence of pHEMT-Based LNA Performance for VSAT Applications
1994
From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8-16 GHz frequency range, the noisy small-signal model of a pseudomorphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to -50 °C) by placing the device text fixture in a thermo-controlled chamber. An accurate noisy model has then been extracted by determining the circuit element values at the different temperatures. The trade-off performance of a pHemt-based LNA for VSAT receiver system applications has been investigated vs. frequency and temperature.
Typical Aspects of the Microwave Noise Performance of HEMTs at Decreasing Temperatures
1996
In analog signal processing at microwave frequencies the noise performance of active devices is of fundamental importance for the accurate design of low-noise amplifiers. To this aim, the determination of the four noise parameters F O , Γ O (complex variable) and Rn has to be accomplished together with the usual scattering parameter measurements vs. frequency. In addition, the dependence of the device performance vs. temperature is of interest for circuit applications characterized by harsh environmental conditions. In this work the noise behavior of high electron mobility transistors has been investigated by means of measurements and modeling in the 2-18 GHz frequency range and as a functi…
Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperatures
1998
Noise parameters are an electrical representation of the noise performance of transistors which is widely used in reliability studies as well as in the design of low-noise microwave amplifiers. Such parameters are usually determined by employing a complex indirect (standard) procedure based on multiple noise figure measurements and appropriate data processing techniques. We report here two altemative and rapid methods used to perform the complete noise characterization of HEMT's at decreasing temperatures over the 6 to 18 GHz frequency range. The results show a very satisfactory agreement.among the different procedures thus assessing the inherent consistency of the global approach to the pr…