Search results for "emission spectroscopy"
showing 10 items of 180 documents
UV-Laser Plasma Study of Elemental Distributions of Paper Coatings
1995
The potential of a laser-generated plasma method in the analysis of coating coverage, coatweight distribution, and 3D distribution of various pigments of paper coating is described. A XeCl-excimer laser (308 nm) was used to generate microscopic plasma from the paper coating, and delayed detection of silicon and calcium atomic emission line intensities was used as a measure of mass vaporized. Macroscopic areas typically 10 × 10 mm2 at a spatial resolution of 250 μm were studied. With a single laser pulse (0.2 mJ of energy), about 2 ng of coating from a volume of 30 μm in diameter and 2 μm in depth was vaporized. The method seems to be useful for characterization of multilayer coatings.
Stabilisation of tetragonal zirconia in oxidised ZrSiN nanocomposite coatings
2004
Abstract ZrSiN coatings were deposited on steel and silicon substrates by reactive sputtering of a composite ZrSi target. The coatings were oxidised in air in the 600–750 °C temperature range. As-deposited and oxidised films were characterised by X-ray diffraction, micro-Raman spectroscopy, X-ray photoemission spectroscopy and glow discharge optical emission spectroscopy. The oxidation behaviour of ZrSiN coatings was compared to that of ZrN ones. It was demonstrated that addition of silicon in the 3–5 at.% range into ZrN-based coatings promotes the onset of oxidation by nearly 100 °C. The structure of the oxide layer was strongly dependent on the film’s silicon content: monoclinic zirc…
Determination of cobalt in foods by atomic absorption and inductively coupled plasma spectrometry (Short communication)
1988
Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy
2011
We present a detailed study of the electronic structure and chemical state of high-quality stoichiometric EuO and O-rich ${\mathrm{Eu}}_{1}{\mathrm{O}}_{1+x}$ thin films grown directly on silicon without any buffer layer using hard x-ray photoemission spectroscopy (HAXPES). We determine the EuO oxidation state from a consistent quantitative peak analysis of $4f$ valence band and $3d$ core-level spectra. The results prove that nearly ideal, stoichiometric, and homogeneous EuO thin films can be grown on silicon, with a uniform depth distribution of divalent Eu cations. Furthermore, we identify the chemical stability of the EuO/silicon interface from Si $2p$ core-level photoemission. This work…
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…
2007
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…
Microanalytical characterization of decorations in handmade ancient floor tiles using inductively coupled plasma optical emission spectrometry (ICP-O…
2013
In this study a total of 114 glazed decorations of 42 ceramic floor tiles, manufactured in Sicily fromthe 16th to 19 the 21th AD, were investigated. The micro sampling method, proposed by us, using a cotton swab soaked in hydrofluoric acid, includes advantages of high sensitivity, high selectivity, simplicity, speed, not expensive and can be considered non-destructive because the point of sampling remains invisible to the human eye. ICP-OES technique was used in this study. Twenty-four elements (Al, As, B, Be, Ba, Ca, Cd, Co, Cr, Cu, Fe, K, Mg, Mn, Mo, Ni, Pb, Sb, Se, Si, Sn, Ti, V and Zn) were determined in each colored enamel. Enameled decorations in Sicilian tiles were varied in tones an…
WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
2020
International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…
In situ monitoring of pulsed laser indium–tin-oxide film deposition by optical emission spectroscopy
2001
We performed optical emission spectroscopy to monitor the plasma produced during the ablation of indium-tin-oxide targets under different oxygen pressure conditions using a pulsed UV laser. Molecular bands of InO were identified in the fluorescent spectra produced by pulsed laser ablation. InO line monitoring allowed obtaining the optimal conditions for good-quality ITO film deposition. We demonstrated that it is possible to correlate InO line spectroscopic parameters with the conditions required to fabricate a high-conductivity and high-transparent ITO thin film. In particular, low resistivity (10-4 to 10-3 Ω cm) was obtained in films deposited at room temperature by regulating oxygen pres…
Effects of the process conditions on the plume of a laser-irradiated indium–tin-oxide target
2001
Abstract The plume of a laser-ablated indium–tin-oxide target was investigated by optical emission spectroscopy. Atomic and ionic species of indium, tin and oxygen were observed; moreover, molecular bands of indium oxide were identified in the fluorescent spectra. The effects of the oxygen as a background gas and of the laser fluence on the behaviour of the ejected particles were studied with respect to the intensity of the emission and the delay time as a function of the observation distance from the target surface. The non-linear behaviour of the fluorescent species with the process conditions could infer spatial variations of the plume composition. The analysis demonstrates a plume expan…
Investigation into the gas mixing effect in ECRIS plasma using Kα and optical diagnostics
2018
Mixing a lighter gas species into the plasma of an ECRIS is known to enhance high charge state production of the heavier gas species. With this investigation, Kα diagnostics, optical emission spectroscopy and the measured charge state distribution of the extracted beam were combined to shed more light on the physics governing this phenomenon. Kα diagnostics data from two ion sources, the JYFL 14 GHz ECRIS and the GTS at iThemba LABS, are presented to gain confidence on the observed trends. The results seem to favor ion cooling as the most likely mechanism responsible for the favorable influence of the gas mixing.Mixing a lighter gas species into the plasma of an ECRIS is known to enhance hi…