Impact of electromagnetic fields and heat on spin transport signals in Y$_{3}$Fe$_{5}$O$_{12}$

2019

Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this work, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a Cu center wire that are deposited on the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. While the Pt wires act as spin current injector and detector, the Cu wire is used to create local magnetostatic fields and additional heat, which impact both the magnetic configuration and the magnons within t…

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

2020

A. Ross and M.K. acknowledge support from the Graduate School of Excellence Materials Science in Mainz (Grant No.DFG/GSC 266). This work was supported by the Max Planck Graduate Center with the Johannes Gutenberg-Universitat Mainz (MPGC). A. Ross, R.L., and M.K. acknowledge support from the DFG Projects No. 423441604 and No. 403502522. R.L. acknowledges the European Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie Grant Agreement FAST No. 752195. All authors from Mainz also acknowledge support from both MaHoJeRo (DAAD Spintronics network, Project No. 57334897), SPIN+X (DFG SFB TRR 173, Project No. A01) and KAUST (Grant No. OSR-2019-CRG8-4048.2). D.A.G.…

Orientation-dependent direct and inverse spin Hall effects in Co 60 Fe 20 B 20

Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

2020

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the N\'eel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $$ directions. The final state of the N\'eel vector $\textbf{n}$ switching after current pulse…

Tunable long-distance spin transport in a crystalline antiferromagnetic iron oxide.

2018

Spintronics relies on the transport of spins, the intrinsic angular momentum of electrons, as an alternative to the transport of electron charge as in conventional electronics. The long-term goal of spintronics research is to develop spin-based, low-dissipation computing-technology devices. Recently, long-distance transport of a spin current was demonstrated across ferromagnetic insulators1. However, antiferromagnetically ordered materials, the most common class of magnetic materials, have several crucial advantages over ferromagnetic systems for spintronics applications2: antiferromagnets have no net magnetic moment, making them stable and impervious to external fields, and can be operated…

Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO

2021

We unambiguously identify the origin of the current-induced magnetic switching of insulating antiferromagnet/heavy metal bilayers. Previously, different reorientations of the Neel order for the same current direction were reported for different device geometries and different switching mechanisms were proposed. Here, we combine concurrent electrical readout and optical imaging of the switching of antiferromagnetic domains with simulations of the current-induced temperature and strain gradients. By comparing the switching in specially engineered NiO/Pt device and pulsing geometries, we can rule out spin-orbit torque based mechanisms and identify a thermomagnetoelastic mechanism to dominate t…

Impact of electromagnetic fields and heat on spin transport signals in Y3Fe5O12

2019

Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this paper, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a Cu center wire that are deposited on the ferrimagnetic insulator ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$. While the Pt wires act as spin current injector and detector, the Cu wire is used to create local magnetostatic fields and additional heat, which impact both the magnetic configur…

Piezo-electrical control of gyration dynamics of magnetic vortices

2019

In this work, we first statically image the electrically controlled magnetostatic configuration of magnetic vortex states and then we dynamically image the time-resolved vortex core gyration tuned by electric fields. We demonstrate the manipulation of the vortex core gyration orbit by engineering the magnetic anisotropies. We achieve this by electric fields in a synthetic heterostructure consisting of a piezoelement coupled with magnetostrictive microstructures, where the magnetic anisotropy can be controlled by strain. We directly show the strong impact of the tailored anisotropy on the static shape of the vortex state and the dynamic vortex core orbit. The results demonstrate the possibil…

Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.

2019

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

Propagation Length of Antiferromagnetic Magnons Governed by Domain Configurations.

2019

Spintronics seeks to functionalize antiferromagnetic materials to develop memory and logic devices operating at terahertz speed and robust against external magnetic field perturbations. To be useful, such functionality needs to be developed in thin film devices. The key functionality of long-distance spin-transport has, however, so far only been reported in bulk single crystal antiferromagnets, while in thin films, transport has so far been limited to a few nanometers. In this work, we electrically achieve a long-distance propagation of spin-information in thin films of the insulating antiferromagnet hematite. Through transport and magnetic imaging, we demonstrate a strong correlation betwe…

An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

2020

We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 {\mu}m, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport…

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3

2019

We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic field, suggesting that field-induced canti…

Identification of Néel Vector Orientation in Antiferromagnetic Domains Switched by Currents in NiO/Pt Thin Films

2021

Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic $\mathrm{Ni}\mathrm{O}/\mathrm{Pt}$ thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel-vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the N\'eel-vector orientation in these domains is along [$\ifmmode\pm\else\textpm\fi{}5$ $\ifmmode\pm\else\textpm\fi{}5$ 19], different compared to the bulk $⟨112⟩$ d…

Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO

2021

As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO…

Orientation-dependent direct and inverse spin Hall effects in Co60Fe20B20

2019

The spin Hall effect is a key element of various spintronics applications. Here, the authors study the orientation-dependent interconversion of spin and charge information in Co${}_{60}$Fe${}_{20}$B${}_{20}$. In a nonlocal magnon transport using Y${}_{3}$Fe${}_{5}$O${}_{12}$ as a spin conduit, the spin Hall effect amplitude depends on the relative alignment between the Y${}_{3}$Fe${}_{5}$O${}_{12}$ and Co${}_{60}$Fe${}_{20}$B${}_{20}$ magnetization vectors. In order to suppress direct magnonic contributions so as to study the electronic origin of this effect, Y${}_{3}$Fe${}_{5}$O${}_{12}$ and Co${}_{60}$Fe${}_{20}$B${}_{20}$ are exchange-decoupled by a Cu interlayer.

Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe

2019

Antiferromagnets possess a number of intriguing and promising properties for electronic devices, which include a vanishing net magnetic moment and thus insensitivity to large magnetic fields and characteristic terahertz frequency dynamics. However, probing the antiferromagnetic ordering is challenging without synchrotron-based facilities. Here, we determine the material parameters of the insulating iron oxide hematite, α-Fe2O3, using the surface sensitive spin-Hall magnetoresistance (SMR). Combined with a simple analytical model, we extract the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya field over a wide range of temperatures and magnetic fields. Across the Morin phas…

Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques.

2020

The system generates two errors of "Bad character(s) in field Abstract" for no reason. Please refer to the manuscript for the full abstract.

Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO 3

2019

We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO3(1 1 0) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO3/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic fields, suggesting that field-induced canting of …

Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

2020

We demonstrate stable and reversible current induced switching of large-area ($> 100\;��m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antifer…

Spin transport in multilayer systems with fully epitaxial NiO thin films

2018

We report the generation and transport of thermal spin currents in fully epitaxial $\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3}/\mathrm{NiO}(001)/\mathrm{Pt}$ and $\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4}/\mathrm{NiO}(001)/\mathrm{Pt}$ trilayers. A thermal gradient, perpendicular to the plane of the sample, generates a magnonic spin current in the ferrimagnetic maghemite $(\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3})$ and magnetite $(\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4})$ thin films by means of the spin Seebeck effect. The spin current propagates across the epitaxial, antiferromagnetic insulating NiO layer…

Efficient Spin Torques in Antiferromagnetic CoO/Pt Quantified by Comparing Field- and Current-Induced Switching

2020

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of 4×10^{-11}  T A^{-1} m^{2}. The Neel vector final state (n⊥j) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.

Direct Imaging of Current-Induced Antiferromagnetic Switching Revealing a Pure Thermomagnetoelastic Switching Mechanism in NiO.

2020

We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch th…

Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance

2021

$\mathrm{Tm}\mathrm{Fe}{\mathrm{O}}_{3}$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$ axis (below 82 K) to the $a$ axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be…

Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films

2018

We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. Th…

Strain-induced Shape Anisotropy in Antiferromagnetic Structures

2022

We demonstrate how shape dependent strain can be used to control antiferromagnetic order in NiO Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can b…

Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe2O3/NiO/Pt epitaxial stacks

2019

We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …

Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks

2019

We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …

Impact of the interplay of piezoelectric strain and current-induced heating on the field-like spin–orbit torque in perpendicularly magnetized Ta/Co20…

2021

Spin–orbit torques (SOTs) are known to be the most efficient way to manipulate the magnetization direction by electrical currents. While, conventionally, one symmetry component of the SOTs, namely, the damping-like torque, was considered to play a primary role, recently, the significance of the other component, the field-like torque, has been revised, owing to the non-trivial dynamics it can induce in heavy metal/ferromagnet multilayers. In this work, we first discuss the unusual behavior of the field-like SOT in a Ta/CoFeB/Ta/MgO multilayer system with a reduced magnetic anisotropy and demonstrate an energy-efficient approach to manipulate the magnitude of the SOT effective fields. Finally…

Data of the article "Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching"

2020

Data for experimental transport measurements and analytical calculations for the article "Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching" (https://arxiv.org/abs/2003.05923)

Identifying the origin of the nonmonotonic thickness dependence of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in a ferrimagn…

2020

Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems with interfacial Dzyaloshinskii-Moriya interaction (iDMI). Here, we quantitatively study the SOT efficiency and iDMI in a series of gadolinium gallium garnet (GGG) / thulium iron garnet (TmIG) / platinum (Pt) heterostructures with varying TmIG and Pt thicknesses. We find that the non-monotonic SOT efficiency as a function of the magnetic layer thickness is not consistent with the 1/thickness dependence expected from a simple interfacial SOT mechanism. Mor…

Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching

2020

Comment: 16 pages (manuscript and supplementary), 12 figures

Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance

2020

TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the N\'eel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state. Here we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition an…

Impact of electromagnetic fields and heat on spin transport signals in Y 3 Fe 5 O 12

Orientation-dependent direct and inverse spin Hall effects in Co60Fe20B20

2019

Data for the article "Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments"

2021

Data for the article "Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments" URL: https://link.aps.org/doi/10.1103/PhysRevApplied.16.064023 DOI: 10.1103/PhysRevApplied.16.064023

Data for the article "Strain-induced shape anisotropy in antiferromagnetic structures"

2022

Data for the article "Strain-induced shape anisotropy in antiferromagnetic structures" URL: https://link.aps.org/doi/10.1103/PhysRevB.106.094430 DOI: 10.1103/PhysRevB.106.094430

Data for the article "An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit "

2020

Data for the article "An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit " (https://aip.scitation.org/doi/full/10.1063/5.0032940 and https://arxiv.org/abs/2011.09755)

Data for the article "Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin f…

2020

Data for experimental transport measurements and optical imaging for the article "Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films" (https://arxiv.org/abs/2004.13374).