Search results for "Allium"
showing 10 items of 385 documents
Density functional simulations of structure and polymorphism in Ga/Sb films.
2013
Thin films of gallium/antimony alloys are promising candidates for phase change memories requiring rapid crystallization at high crystallization temperatures. Prominent examples are the stoichiometric form GaSb and alloys near the eutectic composition GaSb(7), but little is known about their amorphous structures or the differences between the 'as-deposited' (AD) and 'melt-quenched' (MQ) forms. We have generated these structures using 528-atom density functional/molecular dynamics simulations, and we have studied in detail and compared structural parameters (pair distribution functions, structure factors, coordination numbers, bond and ring size distributions) and electronic properties (dens…
MOVPE growth of Ga 3D structures for fabrication of GaN materials
2004
Abstract This paper presents the growth and characterization of metallic gallium three-dimensional (3D) structures and preliminary results of their transformation into GaN-like structures. The structures were grown by metal-organic vapour phase epitaxy (MOVPE), using trimethyl gallium as gallium precursor on silicon (1 0 0). The growth temperature was between 550°C and 750°C. Interesting and new metallic structures were obtained with our growth parameters: balloon (montgolfier-like structure) and cauliflower-like. These metallic structures can grow up perpendicular to the substrate surface and have diameters between 0.1 and 5 μm, depending on the growth conditions. Moreover, selective metal…
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
2004
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.
Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer
2015
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
Dopant radial inhomogeneity in Mg-doped GaN nanowires
2018
International audience; Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the po…
Permanent photodoping of plasmonic gallium-ZnO nanocrystals
2020
This work was supported by the Latvian Council of Science in the framework of FLPP (Plasmonic oxide quantum dots for energy saving smart windows, lzp-2018/1-0187). Tanel Käämbre acknowledges financial support for the XPS instrumentation maintenance from the Estonian Centre of Excellence in Research project “Advanced materials and high- technology devices for sustainable energetics, sensorics and nanoelectronics” (TK141).
Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices
2011
We present in this work the characterization studies carried on GaN — thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures
2004
In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.
Synthesis of self-assembled α-GaOOH microrods and 3D hierarchical architectures with flower like morphology and their conversion to α-Ga2O3
2015
Abstract This report reveals the methodology for the fabrication of α-GaOOH micro rods and micro flowers from gallium nitrate with two different complexing agents. α-GaOOH self-assembled 3D hierarchical architecture, comprising of nanorods and nanoribbbons with a flower like morphology, is fabricated under benign hydrothermal conditions. Calcination of α-GaOOH results in formation of α-Ga 2 O 3 with the retention of morphology. Both gallium oxyhydroxide and gallium oxide microstructures were analyzed with SEM, EDX, TEM and powder X-ray diffraction. α-Ga 2 O 3 micro flowers are furnished with nanorods having ordered diamond like cross section with a diagonal length proportion of 2:1. The hyd…
Characterization of Crystalline Structure and Morphology of Ga<sub>2</sub>O<sub>3</sub> Thin Film Grown by MOCVD Technique
2016
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.