Search results for "molecular beam epitaxy"
showing 10 items of 73 documents
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Unraveling the strain state of GaN down to single nanowires
2016
International audience; GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaN NW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain-defined as [c/a = (c/a)(o)]/(c/a)(o)-within the experimental accuracy amounting to 1.25 x 10(-4). However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substr…
Preparation of superconducting thin films of UNiAl
2005
Abstract Epitaxial thin films of the unconventional heavy fermion superconductor UNi 2 Al 3 we prepared by coevaporation of the elementary components in a molecular beam epitaxy system (MBE). The phase purity and structural quality of the films deposited on (0 1 0)- or (1 1 2)-oriented YAlO 3 substrates were studied by X-ray diffraction and RHEED. The observed R ( T ) behavior is consistent with data obtained from bulk samples and proves the purity of the films. Superconductivity was found with transition temperature T c =0.97 K.
Si Donor Incorporation in GaN Nanowires
2015
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…
Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires
2012
cited By 2; International audience; Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma-Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm-1 has been attributed to the Raman scattering by surface-related phonons. We have analyzed the surface character of these two modes by changing the dielectric constant of the exterior medium and some experimental parameters. Furthermore, a theoretical model describing the nanowires ensemble by means of an effective dielectric function has been used to interpret the Raman scattering results. Those numerical simulations a…
Structure and Doping Determined Thermoelectric Properties of Bi2Se3Thin Films Deposited by Vapour–Solid Technique
2019
In this work, a simple catalyst-free vapour-solid deposition method was applied for controlled deposition of two types (planar and disordered) of continuous Bi 2 Se 3 nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Characterisation of electron transport (type, concentration and mobility of the main charge carriers) and thermoelectric properties (Seebeck coefficient and power factor) showed that proposed in this work deposition method allows to obtain Bi 2 Se 3 thin films with power factor comparable and even higher than reported for the Bi 2 Se 3 thin films grown by molecular beam epitaxy technique. Power factor of the best obtained thin films can be …
Structure-determined thermoelectric properties of Bi2Se3 thin films deposited by vapour-solid technique
2018
International audience; In this work, a simple catalyst-free vapour-solid deposition method is applied for controlled obtaining of two types (planar and disordered) continuous Bi2Se3 nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Performed for the deposited thin films transport and thermoelectric characterization (type, concentration and mobility of the main charge carriers, Seebeck coefficient and power factor) showed that proposed deposition method allows to fabricate “low-doped” Bi2Se3 thin films with power factor comparable and even higher than reported for the Bi2Se3 thin films fabricated by molecular beam epitaxy technique.
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
2013
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.
Mid-infrared intersubband absorption in lattice-matched AlInN/GaN multiple-quantum wells
2005
We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density struct…
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.