Photoluminescence of Ga-face AlGaN/GaN single heterostructures

2001

Abstract The radiative recombination in Ga-face Al 0.30 Ga 0.70 N/GaN single heterostructures (SHs) was studied by photoluminescence (PL) measurements. An energy shift of the excitonic transitions toward higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. In addition to these exciton lines, a broad band energetically localized between the exciton lines and the LO-phonon replica was noticed in the undoped SH. From its energy position, excitation power dependence, as well as temperature behaviour, we have attributed this luminescence to the H -band (HB), which is representative of the two-dimensional electron gas (2DEG) recombination.

Excitonic Transitions in Homoepitaxial GaN

2001

The photoluminescence spectrum of a high quality homoepitaxial GaN film has been measured as a function of temperature. As temperature increases the recombination of free excitons dominates the spectra. Their energy shift has successfully fitted in that temperature range by means of the Bose-Einstein expression instead of Varshni's relationship. Values for the parameters of both semi-empirical relations describing the energy shift are reported and compared with the literature.

High accuracy Raman measurements using the Stokes and anti-Stokes lines

1997

We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applie…

Domain structure of epitaxial SrRuO3 thin films

2005

Growth of multidomains in epitaxial thin-film oxides is known to have a detrimental effect on some functional properties, and, thus, efforts are done to suppress them. It is commonly accepted that optimal properties of the metallic and ferromagnetic $\mathrm{SrRu}{\mathrm{O}}_{3}$ (SRO) epitaxies can only be obtained if vicinal $\mathrm{SrTi}{\mathrm{O}}_{3}$ (001) (STO) substrates are used. It is believed that this results from the suppression of multidomain structure in the SRO film. Here we revise this important issue. Nanometric films of SRO have been grown on STO(001) vicinal substrates with miscut $({\ensuremath{\theta}}_{V})$ angles in the $\ensuremath{\sim}0.04\ifmmode^\circ\else\te…

Raman measurements on GaN thin films for PV - purposes

2012

Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…

From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures

2013

We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additi…

Electronic and acoustic-phonon inter-Landau-level Raman scattering in GaAs/AlxGa1−xAs multiple quantum wells

1995

We present an experimental study of inter-Landau-level excitations in undoped GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple quantum wells in high magnetic fields by means of Raman scattering. The experiments were performed in Faraday backscattering geometry with the field along the growth axis, using circularly polarized light for resonant excitation of low-index magneto-optical transitions between Landau levels. We observe two types of peaks. One of them, present in both Stokes and anti-Stokes regions at a constant Raman shift, corresponds to the electron cyclotron energy. We attribute it to electronic Raman scattering from a quasistationa…

Enhanced optical properties of Cd–Mg-co-doped ZnO nanoparticles induced by low crystal structure distortion

2020

Abstract The growth of CdxMg0.125-xZn0.875O nanoparticles with yellow-orange luminescence is achieved up to 2.5 at. % Cd via a modified sol–gel process. X-ray diffraction analysis confirmed that all the nanoparticles have the hexagonal wurtzite structure. It is found that Cd doping has a considerable effect on the crystal size, microstrain, band gap, and photoluminescence of the Mg0·125Zn0·875O structure, originating from a preferred crystallographic orientation along the (101) plane of the wurtzite structure. The shift and broadening of the E2(high) mode observed in the Raman spectra due to growth-induced strain corroborates the small distortion observed in the X-ray diffraction data. The …

Reduction of the internal electric field in GaN/AlN quantum dots grown on the a ‐plane of SiC substrates

2005

We present a study of the emission of a multi-layer stack of self-assembled GaN/AlN quantum dots grown on the a -plane of 6H-SiC. We look for signatures of the internal electric field in the power dependence of the time-integrated and time-resolved photoluminescence spectra. The lack of a dynamical red-shift reveals that internal electric fields are significantly reduced in these dots. A band on the low energy side of the emission is observed whose intensity quenches fast when increasing the temperature. The polarization selection rules of the emission are examined in order to determine the physical nature of this band. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

From My Postdoc at the “Abteilung Cardona”

2015

Before finishing my Ph.D. in September 1986, I had already a non permanent position at the University of Valencia, it was called at this time assistant professor (profesor ayudante), with a lot of teaching. I sent a letter to Manuel at the beginning of 1987 and, after receiving the letter, he called immediately by phone my thesis advisor, Prof. Alfredo Segura. Manuel told him: I have a lot of people at the moment, but if he is very good, I will accept him. Finally, he sent me an acceptation letter and I got a fellowship from the local government and the Ministry of Education. I did my postdoc from December 87 to 89.

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

2010

Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration $({N}_{D}^{+})$ and a two-dimensional density of ionized surface states $({N}_{ss}^{+})$. For NW radii larger than 30 nm, ${N}_{D}^{+}$ and ${N}_{ss}^{+}$ modify the absorption edge and the lineshape, respectively, and can be determined f…

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

2009

Thermosetting composites based on bronze particles for archaeological and artistic metal heritage cloning

2018

peer-reviewed Artificial Metals are polymeric semi-metallic composites obtained by combining thermosetting resins with atomized metal powders in order to achieve composite materials capable of reproducing metals, even in a rusty or corroded condition. These composites provide a solution for the reproduction of archaeological artefacts, sculptures, and ornaments for the purpose of conservation. This work explores mechanical properties of three different resins bronze composites loaded with two different proportions of metal filler. The degree of conversion of the samples was measured by differential scanning calorimetry (DSC) and flexural tests were carried out to determine their mechanical …

Nanowires: A route to efficient thermoelectric devices

2019

Miniaturization of electronic devices aims at manufacturing ever smaller products, from mesoscopic to nanoscopic sizes. This trend is challenging because the increased levels of dissipated power demands a better understanding of heat transport in small volumes. A significant amount of the consumed energy in electronics is transformed into heat and dissipated to the environment. Thermoelectric materials offer the possibility to harness dissipated energy and make devices less energy-demanding. Heat-to-electricity conversion requires materials with a strongly suppressed thermal conductivity but still high electronic conduction. Nanowires can meet nicely these two requirements because enhanced …

LDA+Uand tight-binding electronic structure of InN nanowires

2013

In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride InN nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and…

Photoluminescence and Raman spectroscopy of MBE‐grown InN nanocolumns

2008

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E2h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface …

Excitonic absorption and Urbach's tail in bismuth sulfide single crystals

1988

The absorption coefficient of bismuth sulfide single crystals has been measured through more than four orders of magnitude and in the range of energies from 1.25 to 1.70 eV. A detailed study as a function of temperature has been carried out from 29 to 300 K. An Urbach tail for low values of absorption has been found. This tail and its temperature evolution fit the expression for ionic materials. An excitonic region appears at low temperature and the shape of the exciton peak is Gaussian, which corresponds to a strong exciton-phonon coupling. The exciton binding energy is estimated (28±3 meV) and then the energy gap at 29 K is obtained (Eg=1.523±0.003 eV). The fundamental electronic transiti…

High Thermoelectric Power Factor Organic Thin Films through Combination of Nanotube Multilayer Assembly and Electrochemical Polymerization

2017

In an effort to produce effective thermoelectric nanocomposites with multiwalled carbon nanotubes (MWCNT), layer-by-layer assembly was combined with electrochemical polymerization to create synergy that would produce a high power factor. Nanolayers of MWCNT stabilized with poly(diallyldimethylammonium chloride) or sodium deoxycholate were alternately deposited from water. Poly(3,4-ethylene dioxythiophene) [PEDOT] was then synthesized electrochemically by using this MWCNT-based multilayer thin film as the working electrode. Microscopic images show a homogeneous distribution of PEDOT around the MWCNT. The electrical resistance, conductivity (σ) and Seebeck coefficient (S) were measured before…

Optical properties of nitride nanostructures

2010

In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or t…

Surface Acoustic Bloch Oscillations, the Wannier-Stark Ladder, and Landau-Zener Tunneling in a Solid

2010

We present the experimental observation of Bloch oscillations, the Wannier-Stark ladder, and Landau-Zener tunneling of surface acoustic waves in perturbed grating structures on a solid substrate. A model providing a quantitative description of our experimental observations, including multiple Landau-Zener transitions of the anticrossed surface acoustic Wannier-Stark states, is developed. The use of a planar geometry for the realization of the Bloch oscillations and Landau-Zener tunneling allows a direct access to the elastic field distribution. The vertical surface displacement has been measured by interferometry.

Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples

2021

The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their concentration. The magnetometry revealed the coexistence of a paramagnetic and a ferromagnetic phase …

Low-temperature exciton absorption in InSe under pressure.

1992

We have investigated the effect of pressure on the lowest direct band-edge exciton of the layered semiconductor InSe by optical-absorption measurements at 10 K and for pressures up to 4 GPa. The Elliott-Toyozawa formalism is used to analyze the line shape of the exciton absorption spectra. In this way we determine the pressure dependence of the lowest direct band gap, the exciton binding energy, and the exciton linewidth. The band gap exhibits a pronounced nonlinear shift with pressure, which is a consequence of the strong anisotropy of intralayer and interlayer bonding. The exciton binding energy decreases with pressure, mainly due to the large increase of the low-frequency dielectric cons…

Controlling dielectrical properties of polymer blends through defined PEDOT nanostructures

2016

[EN] The paper reports the crucial role of the morphology of poly(3,4-ethylenedioxythiophene) (PEDOT) nanostructures on the thermal and dielectric properties of polymer blends prepared thereof. PEDOT nanostructures with two different morphologies (nanoparticles and nanowires) were synthesized. The size for the nanoparticles was in the range 10 40 nm and the diameter of the nanowires was of ca. 200 nm. These nanostructures were blended with an insulating polymer matrix, poly(methyl methacrylate) (PMMA), to evaluate the dielectrical properties of the materials. The results of broadband dielèctric spectroscopy showed a strong correlation between the morphology of the nanostructure and the impr…

Impact of the scattering coefficient of scintillation crystals (LYSO and LSO) on depth of interaction resolution

2008

Intrinsic parameters in scintillation crystals play a crucial role in the measured spatial and energy resolutions. In many cases the measurement of these intrinsic parameters is difficult to be carried out or even there are parameters that need a specific setup to be measured directly, e.g. the intrinsic light yield and the absorption and scattering coefficients. These uncertainties in the parametrization of the characteristics of the scintillation crystals make it quite difficult to evaluate the quality and characteristics of the scintillation crystals and their impact on the resolutions. Results of measurements of depth of interaction and its resolutions for three different scintillation …

Macroscopic and microscopic study of the planar vibrational mode coupling

1999

We investigate the planar vibrational modes (PVMs) of a structure consisting of two parallel slabs of a strange atom (X) inserted in a matrix of a binary material (AB). The study of the coupling of the PVMs has been undertaken with two different approaches. In the first model, the structure is described from a macroscopic point of view, characterizing the physical properties of the constitutive materials by their layer densities, dielectric constants and strain tensors. Adequate boundary conditions are imposed at the material interfaces to obtain the vibrational modes of the structure. In the second model, the study of the planar modes is undertaken from a microscopic point of view, by usin…

Nonanuclear Spin-Crossover Complex Containing Iron(II) and Iron(III) Based on a 2,6-Bis(pyrazol-1-yl)pyridine Ligand Functionalized with a Carboxylat…

2016

The synthesis and magnetostructural characterization of [Fe(III)3(μ3-O)(H2O)3[Fe(II)(bppCOOH)(bppCOO)]6](ClO4)13·(CH3)2CO)6·(solvate) (2) are reported. This compound is obtained as a secondary product during synthesis of the mononuclear complex [Fe(II)(bppCOOH)2](ClO4)2 (1). The single-crystal X-ray diffraction structure of 2 shows that it contains the nonanuclear cluster of the formula [Fe(III)3(μ3-O)(H2O)3[Fe(II)(bppCOOH)(bppCOO)]6](13+), which is formed by a central Fe(III)3O core coordinated to six partially deprotonated [Fe(II)(bppCOOH)(bppCOO)](+) complexes. Raman spectroscopy studies on single crystals of 1 and 2 have been performed to elucidate the spin and oxidation states of iron …

Defect spectroscopy of single ZnO microwires

2014

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 1018 cm3 . This combination of tech…

Acoustically tunable photonic band gap structures

2005

We discuss the formation of a tunable one-dimensional photonic band gap structure through the modulation of the resonance frequency of an optical microcavity by a surface acoustic wave (SAW). The microcavity consists of a λ/2 GaAs layer bounded by AlAs/GaAs Bragg mirrors. The SAW periodically modulates the optical thickness of the cavity layer, leading to a light dispersion relation folded within a mini-Brillouin zone (MBZ) defined by |k x |≤ π/λ SAW (k x denotes the photon wave vector component along the SAW propagation direction x-with-caret). In reflection and diffraction experiments, we observe photon modes bounding the gaps in the center and at the boundary of the MBZ as well as a reno…

Lattice Dynamics in Wurtzite Semiconductors: The Bond Charge Model of CdS

1999

An extension of the adiabatic bond charge model of Rustagi and Weber is used to study the lattice dynamic properties of wurtzite-type compounds. The model has been applied to the description of the phonon dispersion of CdS, which has been recently measured by neutron scattering. The agreement with the neutron data is excellent with a small set of physically meaningful parameters. The eigenvector admixture of the E2 modes, calculated at the G-point, agrees with the experimental values obtained through the isotopic mass dependence of the optical modes and ab initio calculations.

Polarized recombination of acoustically transported carriers in GaAs nanowires

2012

: The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation d…

Structural and luminescence properties of GaN nanowires grown using cobalt phthalocyanine as catalyst

2015

Catalyst free methods have usually been employed to avoid any catalyst induced contamination for the synthesis of GaN nanowires with better transport and optical properties. Here, we have used a catalytic route to grow GaN nanowires, which show good optical quality. Structural and luminescence properties of GaN nanowires grown by vapor-liquid-solid technique using cobalt phthalocyanine as catalyst are systematically investigated as a function of various growth parameters such as the growth temperature and III/V ratio. The study reveals that most of the nanowires, which are several tens of microns long, grow along [101¯0] direction. Interestingly, the average wire diameter has been found to …

Influence of calcination on the structural properties of earth abundant Cu2ZnSnS4

2021

Abstract In the present work, we report on the synthesis of nano-crystalline kesterite copper zinc tin sulfide (CZTS) in powder form and the post-annealing process at high temperatures (calcination), and study their physical properties. We have successfully synthesized CZTS by direct fusion, and the resulting material was crushed to obtain a fine powder. Then, the resulting powder was calcined at high temperatures: 800–1000 ∘C. The calcined samples have been characterized with a number of different structural: X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and optical techniques: photoluminescence (PL), Raman and diffuse reflectance spectr…

The effect of reducing dimensionality on the excitonic recombination in InAs/InP heterostructures

1997

In this work we study the exciton recombination of InAs/InP self-organized quantum dots by means of photolumincscence (PL) as a function of temperature and excitation density. Well defined islands, spatially separated in most cases, and with different size distribution, make localized exciton recombination the dominant contribution to the PL spectrum. From our experimental results, we propose the co-existence of two types of islands, one with small height whose contribution to the PL spectra is important in samples with low InAs coverage (below two monolayers), and the properly 3D islands, whose dimensions and sheet concentration increase with the InAs coverage. Good quality structures are …

Finite Size Effects on the Optical Transitions in Quantum Rings under a Magnetic Field

2006

We present a theoretical study of the energy spectrum of single electron and hole states in quantum dots of annular geometry under a high magnetic field along the ring axis in the frame of uncorrelated electron-hole theory. We predict the periodic disappearance of the optical emission of the electron-hole pair as the magnetic field increases, as a consequence of the finite height of the barriers. The model has been applied to semiconductor rings of various internal and external radii, giving as limiting cases the disk and antidot.

Dynamic carrier distribution in quantum wells modulated by surface acoustic waves

2001

We have investigated the dynamics of photogenerated carriers under surface acoustic wave (SAW) fields in GaAs quantum wells using spatially and time-resolved photoluminescence (PL). The frequency and phase of the PL oscillations under a SAW yield information about the carrier distribution and the band-gap modulation induced by the SAW. We directly prove that the transport properties of the carriers ultimately control their distribution, storage and, subsequent recombination in the modulated potential.

Energy levels of a quantum ring in a lateral electric field

2002

Abstract The electronic states of a semiconductor quantum ring (QR) under an applied lateral electric field are theoretically investigated and compared with those of a quantum disk of the same size. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio r2/r1, where r2 (r1) is the outer (inner) radius of the ring. The effects of decreasing symmetry and mixing on the energy levels and wave functions due to the applied electric field are also studied. The direct optical absorpti…

Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals

2003

ABSTRACTRaman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560–660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed …

Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

2012

In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schrodinger equation for a cylindrical nanowire of infinite length, a…

Elastic light scattering from semiconductor structures: Localized versus propagating intermediate electronic excitations

1995

We present a theoretical study of the relative role of localized and propagating intermediate electronic states in the processes of elastic scattering of light. Only localized excitations lead to isotropic scattering in lowest-order perturbation theory. Inhomogeneous broadening of the optical transition affects the scattering efficiency from the ordered and disordered array of localized states in a qualitatively different way. The propagating electronic excitations may only contribute to elastic light scattering via higher-order processes. The scattering of excitons by impurities or the interface roughness potential is suggested as a mechanism for the contribution of propagating excitations…

Physical properties and applications of InxGa1−xN nanowires

2014

We have successfully grown InxGa1−xN nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. InxGa1−xN is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowi…

Spontaneous core–shell elemental distribution in In-rich In(x)Ga1-xN nanowires grown by molecular beam epitaxy.

2014

International audience; The elemental distribution of self-organized In-rich InxGa1-xN nanowires grown by plasma-assisted molecular beam epitaxy has been investigated using three different techniques with spatial resolution on the nanoscale. Two-dimensional images and elemental profiles of single nanowires obtained by x-ray fluorescence and energy-dispersive x-ray spectroscopy, respectively, have revealed a radial gradient in the alloy composition of each individual nanowire. The spectral selectivity of resonant Raman scattering has been used to enhance the signal from very small volumes with different elemental composition within single nanowires. The combination of the three techniques ha…

Optical properties of InN nanocolumns: Electron accumulation at InN non‐polar surfaces and dependence on the growth conditions

2009

InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present atthe non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the densit…

Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

1999

Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…

Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors

1996

A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a strong increase of the scattering efficiency under the applied magnetic field) or discrete excitons (resulting in the outgoing resonance at the excitonic gap) are taken into account.

Influence of Mn site doping on electrical resistivity of polycrystalline La1-yAyMn1-xBxO3 (A=Ba, Sr; B=Cu, Cr, Co) Manganites

2008

We have the measured electrical resistivity of La1-yBayMn1-xCuxO3 (0.17?y?0.30; 0.04?x?0.10), La1-ySryMn1-xCrxO3 and La1-ySryMn1-xCoxO3 (0.270?y?0.294; 0.02?x?0.10) polycrystalline samples in the 25-325 K temperature range. The increase of Mn site doping concentration leads to an increase of the electrical resistivity of the samples and the appearance of a ?double-peak? structure in the electrical resistivity versus temperature graphs. The first peak represents the insulator-metal transition in vicinity of the paramagnetic-ferromagnetic transition (TC). We have found that the intensity of the second peak increases with an increase of concentration of Mn substituents, due to the hole scatter…

Resonant Raman scattering in self-assembledGaN∕AlNquantum dots

2006

Self-assembled $\mathrm{Ga}\mathrm{N}∕\mathrm{Al}\mathrm{N}$ quantum dots have been investigated by means of Raman scattering. A resonant enhancement of the Raman peaks has been observed when the excitation is tuned above the GaN band-gap energy. The polar mode nature, either quasiconfined or interfacial, has been assigned after comparing with the polar optical modes of spheroidal dots calculated within the framework of the anisotropic dielectric continuum model. The built-in strain of the GaN dots induced a substantial blueshift of the nonpolar ${E}_{2H}$ Raman mode frequency. A theoretical model that analyzes the three-dimensional strain distribution in the quantum dots has been employed …

Monolayer-to-Mesoscale Modulation of the Optical Properties in 2D CrI3 Mapped by Hyperspectral Microscopy

2023

Semiquantum molecular dynamics simulation of thermal properties and heat transport in low-dimensional nanostructures

2012

We present a detailed description of the semi-quantum approach to the molecular dynamics simulation of stochastic dynamics of a system of interacting particles. Within this approach, the dynamics of the system is described with the use of classical Newtonian equations of motion in which the quantum effects are introduced through random Langevin-like forces with a specific power spectral density (the color noise). The color noise describes the interaction of the molecular system with the thermostat. We apply this technique to the simulation of the thermal properties of different low-dimensional nanostructures. Within this approach, we simulate the specific heat and heat transport in carbon n…

Raman Scattering Applied to Materials Science

2015

Abstract One of the most powerful techniques to extract physical and chemical information of a material is the light scattering. Opposite to x-ray scattering for instance, where an average of the sample properties is obtained, Raman scattering is a local probe which can be used to detect inhomogeneities, local strain, lack of crystallinity, anharmonicities or information on the electronic structure by means of resonant Raman scattering. In this work, we will analyze the main contributions of Raman scattering in Materials Sciences. After a brief introduction of the technique and the equipment needed for the physical measurements, we will give practical examples of Raman scattering measuremen…

Effects of hydrostatic pressure on the thermoelectric properties of the ϵ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds: anab initiostu…

2017

Correction: Effect of nanostructuration on the spin crossover transition in crystalline ultrathin films

2019

Correction for ‘Effect of nanostructuration on the spin crossover transition in crystalline ultrathin films’ by Víctor Rubio-Giménez et al., Chem. Sci., 2019, DOI: 10.1039/c8sc04935a.

Optical phonons and electron-phonon interaction in quantum wires.

1993

A unified macroscopic continuum theory for the treatment of optical-phonon modes in quantum-wire structures is established. The theory is based on a Lagrangian formalism from which the equations of motion are rigorously derived. They consist of four coupled second-order differential equations for the vibrational amplitude and electrostatic potential. The matching boundary conditions are obtained from the fundamental equations. It is shown that no incompatibility exists between mechanical and electrostatic matching boundary conditions when a correct mathematical treatment of the problem is given. The particular case of a GaAs quantum wire buried in AlAs, where the phonons can be considered c…

The influence of thickness, interpore distance and compositional structure on the optical properties of self-ordered anodic aluminum oxide films

2016

Highly ordered anodic aluminum oxide (AAO) films were fabricated using a two-step anodization process in oxalic acid, sulfuric acid, or ethylene glycol containing sulfuric acid, which are important in design of nanostructured optical devices. The morphology and UV-Vis reflectance spectroscopy of these films were analyzed. The morphological parameters of the AAO films, such as the thickness, pore diameter, interpore distance, porosity, pore arrangement regularity, and anodization electrolyte, were adjusted in order to study the effect of these parameters on the UV-Vis reflectance properties of these films. Raman spectroscopy measurements were then utilized to better understand the chemical d…

An experimental study of dynamic behaviour of graphite polycarbonatediol polyurethane composites for protective coatings

2013

Segmented polycarbonatediol polyurethane (PUPH) has been synthesized and modified with different amounts of graphite conductive filler (from 0 to 50 wt%). Thermal and dynamical thermal analysis of the composites clearly indicates changes in the polyurethane relaxations upon addition of graphite. Broadband dielectric spectroscopy has been used to study the dielectric properties of the (PUPH) and one composite in the frequency range from 10−2 to 107 Hz and in the temperature window of −140 to 170 ◦C. Relaxation processes associated with different molecular motions and conductivity phenomena (Maxwell–Wagner–Sillars and electrode polarization) are discussed and related to the graphite content

Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping

2007

We have studied in detail changes in the strain state of GaN/AlN quantum dots during the capping process. μ-Raman scattering experiments allowed the detection of a resonant mode which provided information on the evolution of strain with capping. Simultaneously, Multiwavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) experiments were performed on the same samples, providing the independent determination of the wurtzite lattice parameters a and c. The remarkable agreement between Raman and X-ray data stands out the suitability of polar vibrational modes for the determination of strain in nanostructures. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Raman scattering study of the anharmonic effects in CeO2−ynanocrystals

2007

We have studied the temperature dependence of the F2g Raman mode phonon frequency and broadening in CeO2−y nanocrystals. The phonon softening and phonon linewidth are calculated using a model which takes into account the three-and four-phonon anharmonic processes. A detailed comparison of the experimental data with theoretical calculations revealed the predominance of four-phonon anharmonic processes in the temperature dependence of the phonon energy and broadening of the nanocrystals. On the other hand, three-phonon processes dominate the temperature behavior of phonons in polycrystalline samples. The anti-Stokes/Stokes peak intensity ratio was also investigated and found to be smaller for…

Temperature and Isotopic Mass Dependence of the Direct Band Gap in Semiconductors: LCAO Calculations

2000

Controlling the thermoelectric properties of polymers: application to PEDOT and polypyrrole

2015

Poly(3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole (PPy) films have been prepared by an electrochemical method in a three electrode cell. The films have been obtained at different oxidation levels regarded as bipolaron, polaron and neutral states by varying the voltage, as is usually done in conjugated heterocyclic polymers. The voltage (-0.2V1.0 V) has been applied versus a Ag/AgCl reference electrode, producing a variation of one order of magnitude in the electrical conductivity and the Seebeck coefficient of the films. In the voltage range explored, the electrical conductivity increases from 80 to 766 S cm(-1) in PEDOT and from 15 to 160 S cm(-1) in PPy, while the Seebeck coefficie…

Acoustically driven arrayed waveguide grating.

2015

We demonstrate compact tunable phased-array wavelength-division multiplexers driven by surface acoustic waves (SAWs) in the low GHz range. The devices comprise two couplers, which respectively split and combine the optical signal, linked by an array of single-mode waveguides (WGs). Two different layouts are presented, in which multi-mode interference couplers or free propagating regions were separately employed as couplers. The multiplexers operate on five equally distributed wavelength channels, with a spectral separation of 2 nm. A standing SAW modulates the refractive index of the arrayed WGs. Each wavelength component periodically switches paths between the output channel previously asi…

Modulation of the electronic properties of GaN films by surface acoustic waves

2003

We report on the interaction between photogenerated electron-hole pairs and surface acoustic waves (SAW) in GaN films grown on sapphire substrates. The spatial separation of photogenerated carriers by the piezoelectric field of the SAW is evidenced by the quenching of the photoluminescence (PL) intensity. The quenching levels in GaN are significantly smaller than those measured in GaAs under similar conditions. The latter is attributed to the lower exciton ionization efficiency and carrier separation probabilities mediated by the piezoelectric effect. The PL spectra also evidence energy shifts and broadenings of the electronic transitions, which are attributed to the band gap modulation by …

Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown ona-plane 6H-SiC

2006

The strain state of stacks of GaN/AIN quantum dots (QDs) grown on (0001) and (1120) 6H-SiC has been investigated by means of Raman spectroscopy. Depending on the orientation of the wurtzite axis with respect to the growth direction it is found that the piezoelectric contribution to the electrostatic potential may either reinforce that arising from the spontaneous polarization or oppose it. The experimental results are compared with a theoretical model for the strain and polarization field in QDs of both orientations that allows the calculation of the electrostatic potential in the QDs. Both the experimental results and the theoretical model indicate that the internal electric field and elec…

Gallium nitride thin films as processed by several techniques: Their possible applications for PV-devices

2011

We present in this work the characterization studies carried on GaN — thin films as processed by the Close Spaced Vapor Technique (CSVT), Laser Ablation (LA), and Molecular Beam Epitaxy (MBE), under particular growth parameters for each of the three techniques. The films characterization was performed by x-ray diffraction (X-RD), Photoluminescence (PL), Raman spectroscopy, optical transmission, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). With these results an analysis of the samples was done, with an aim for a possible application of these thin films for PV-devices.

Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

2011

Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…

Electron scattering mechanisms inn-type indium selenide

1984

Electron scattering mechanisms in $n$-type indium selenide are investigated by means of the temperature dependence (4-500 K) of Hall mobility and the magnetic field dependence of Hall and magnetoresistance coefficients. The Schmid model for homopolar optical-phonon scattering can explain the temperature dependence of electron mobility above 40 K. The electron-phonon coupling constant is determined, ${g}^{2}=0.054$. The optical phonon involved in the process is identified as the ${A}_{1}^{\ensuremath{'}}$ phonon with energy 14.3 meV. The magnetic field dependence of Hall and magnetoresistance coefficients is discussed in terms of the Jones-Zener expansion.

Phonon properties of the spinel oxideMgTi2O4with theS=1/2pyrochlore lattice

2003

We study the phonon dynamics of ${\mathrm{MgTi}}_{2}{\mathrm{O}}_{4}$ spinel by measuring the Raman and infrared reflectivity spectra in a wide frequency $(100--3000{\mathrm{cm}}^{\ensuremath{-}1})$ and temperature (10 K--300 K) range. The reflectivity spectra are analyzed by a fitting procedure based on a model which includes both Drude and phonon oscillator contributions to the dielectric constant. The phonon assignment is done from comparison between experimental data and shell model lattice dynamical calculations. We find two infrared-active ${F}_{1u}$ symmetry modes superimposed on the free carrier continuum, and four Raman-active modes of ${1A}_{1g},$ ${1E}_{g},$ and ${2F}_{2g}$ symme…

Synchronized photonic modulators driven by surface acoustic waves

2013

Photonic modulators are one of the most important elements of integrated photonics. We have designed, fabricated, and characterized a tunable photonic modulator consisting of two 180 degrees-dephased output waveguide channels, driven by a surface acoustic wave in the GHz frequency range built on (Al,Ga)As. Odd multiples of the fundamental driven frequency are enabled by adjusting the applied acoustic power. A good agreement between theory and experimental results is achieved. The device can be used as a building block for more complex integrated functionalities and can be implemented in several material platforms. (C) 2013 Optical Society of America

Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques

2015

The growth selectivity and structural quality of GaN nanowires obtained by plasma-assisted molecular beam epitaxy on pre-patterned GaN(0001) templates are investigated by means of non-destructive techniques. Optimum control over the nanowire arrangement and size requires a pitch between the mask apertures below twice the diffusion length of Ga atoms. Lower pitches, however, seem to slightly diminish the structural quality of the material, as revealed by the increase of the Raman peak linewidths. The photoluminescence spectra of the nanowires show a considerable presence of basal plane stacking faults, whose density increases for decreasing nanowire diameter. The capabilities of Kelvin probe…

Carrier Transport in GaAs Nanowires Using Surface Acoustic Waves

2012

ABSTRACTThe oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires (NWs) transferred to a SAW beam line on a LiNbO3 crystal. We show that carriers generated in the NW by a focused light spot can be acoustically transported to a second location, where they recombine emitting short light pulses. The results presented here demonstrate the high-frequency manipulation of carriers in NWs without the use of electrical contacts, which opens new perspectives for applications in opto-electronic devices operating at GHz frequencies.

Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer

2012

We present computational results for strain effects on charge carrier confinement in Ge${}_{x}$Si${}_{1\ensuremath{-}x}$ quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced sep…

Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by Hard X-ray synchrotron nanoprobes

2019

Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle …

The effect of Cu substitution on the A1g mode of La(0.7)Sr(0.3)MnO3 manganites

2003

We report on the first Raman data of Cu substituted La(1-y)Sr(y)Mn(1-x)Cu(x)O3 (0 < x < 0.10 and 0.17 < y < 0.3, accordingly in order to have the same Mn(4+)/[Mn(4+)+Mn(3+)] ratio), collected in the frequency range 100-900 cm-1 and at room temperature, with parallel and crossed polarizations of the incident and scattered light. Spectra were fitted with a Drude-Lorentz model, and peaks at 190-220 and 430 cm-1, together with two broad structures centered at near 500 and 670 cm-1, have been found. We also have observed that the A1g mode is substantially shifted with increasing Cu substitution. The A1g phonon shift is a linear function of the tolerance factor t and the rhombohedral …

Resonant Raman scattering in quantum wells in high magnetic fields: Deformation-potential interaction.

1992

A theoretical study of one-phonon resonant Raman scattering in a quantum well (QW) in high magnetic fields has been performed. The Raman profiles are calculated as a function of magnetic field, quantum-well thickness, and laser frequency. The basic theory is first developed assuming parabolic masses in the plane perpendicular to the growth direction of the QW. Selection rules for deformation-potential-allowed scattering are given and a compact analytical expression for the Raman-scattering efficiency is obtained for infinite barriers. The double-resonance conditions are derived as a function of the magnetic field or well thickness. In a second part of the work, the heavy-hole\char21{}light-…

Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy

2006

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature ( T c ) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO 3 layers in BaTiO 3 /SrTiO 3 superlattices are not only ferroelectric (with T c as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO 3 layers adjacent to them. T c was tuned by ∼500 kelvin by varying the thicknesses of the BaTiO 3 and SrTiO 3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

Excitonic model for second-order resonant Raman scattering.

1994

A theoretical model for second-order resonant Raman scattering is presented. The effect of Coulomb interaction between electrons and holes is fully taken into account in the framework of the effective-mass approximation. By introducing discrete and continuous excitonic intermediate states in the Raman process, an explicit expression for the Raman scattering efficiency is given for long-range Fr\"ohlich electron-phonon interaction. The model developed can be used to evaluate Raman profiles around the resonant region. A closed-form expression for all matrix elements of the exciton-phonon interaction is obtained once the Coulomb problem for the relative electron-hole motion is separated in sph…

Dependence of the lattice parameters and the energy gap of zinc-blende-type semiconductors on isotopic masses.

1996

The dependence of the ${\mathit{E}}_{0}$ direct gap of Ge, GaAs, and ZnSe on isotopic masses at low temperatures has been investigated. Contributions of the variation of the lattice parameter to the gap shift of the binary compounds have been evaluated by using a volume-dependent lattice dynamics, while local empirical pseudopotential techniques have been employed to calculate gap shifts due to electron-phonon interaction. The dependence of these terms on the lattice-dynamical model and on the q\ensuremath{\rightarrow}0 extrapolation of the pseudopotential form factors has been investigated. The contributions of the optical and acoustical modes to the isotopic shift are analyzed. The result…

Vibrational properties of ZnTe at high pressures

2002

Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T = 300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Gruneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and ort…

Biexciton formation and exciton coherent coupling in layered GaSe.

2015

Nonlinear two-dimensional Fourier transform (2DFT) and linear absorption spectroscopy are used to study the electronic structure and optical properties of excitons in the layered semiconductor GaSe. At the 1s exciton resonance, two peaks are identified in the absorption spectra, which are assigned to splitting of the exciton ground state into the triplet and singlet states. 2DFT spectra acquired for co-linear polarization of the excitation pulses feature an additional peak originating from coherent energy transfer between the singlet and triplet. At cross-linear polarization of the excitation pulses, the 2DFT spectra expose a new peak likely originating from bound biexcitons. The polarizati…

Role of excitons in double Raman resonances in GaAs quantum wells

1996

Raman scattering by longitudinal-optical phonons has been measured in GaAs-AlAs multiple quantum wells at high magnetic fields. Doubly resonant scattering processes are observed at photon energies corresponding to magneto-excitons with different principal quantum numbers for the incoming and outgoing channels. The existence of these initially forbidden scattering processes, their resonance energies, and their relative intensities are correctly reproduced by our theoretical description. The model takes into account the excitonic nature of the intermediate states, as well as scattering processes involving a nonzero in-plane phonon wave vector, which is required to allow inter-Landau level sca…

Raman studies of isotope effects in Si and GaAs

1999

Abstract We have measured by Raman scattering changes of the optic phonon energy and line width in Si and GaAs with isotopic composition. The phonon energies of isotopically pure samples show the expected dependence on the average atomic mass in Si and the reduced mass in GaAs, respectively, as well as small anharmonic contributions. In isotopically disordered samples we find frequency shifts of 1.15(20) cm−1 for 28Si0.530Si0.5 and 0.31(20) cm−1 for the TO phonon of natGaAs, induced by mass disorder which also contributes to the line broadening. We give theoretical estimates of these effects.

Tunable coupled surface acoustic cavities

2012

We demonstrate the electric tuning of the acoustic field in acoustic microcavities (MCs) defined by a periodic arrangement of metal stripes within a surface acoustic delay line on LiNbO3 substrate. Interferometric measurements show the enhancement of the acoustic field distribution within a single MC, the presence of a “bonding” and “anti-bonding” modes for two strongly coupled MCs, as well as the positive dispersion of the “mini-bands” formed by five coupled MCs. The frequency and amplitude of the resonances can be controlled by the potential applied to the metal stripes.

Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

2000

6 páginas, 6 figuras, 1 tabla.

Cyclometallation reactions in complexes of the type Rh(oq)(CO)(P(o-BrC6F4)Ph2)

1986

Abstract The reaction of Rh(oq)(CO)(PCBr) (PCBr = P(o-BrC6F4)Ph2; oq = 8-oxyquinolinte)_ in refluxing toluene in the presence of Et4NBr (1/4 molar ratio) gives Rh(oq)Br(PC) (H2O), PC = P (o-C6F4)Ph2, in practically quantitative yield. The water molecule is readily displaced by various P-donor ligands to give complexes of general formula Rh(oq)Br(PC) PR3 (PR3 = PPh3, P(p-MeC6H4)3, P(p-MeOC6H4)3, P(p-FC6H4)3, P(PMe)3 and P(OPh3). The molecular structure of the compound Rh(oq)Br(PC) (PPh3) has been determined by X-ray methods. Crystals of the title compound are monoclinic, space group P21/n with unit cell dimensions a 11.273(4), b 20.087(8), c 17.471(7) A and β 102.15(8)°. The final R for 2304…

Raman study and theoretical calculations of strain in GaN quantum dot multilayers

2006

Changes in strain and phonon mode energy in stacks of self-assembled GaN quantum dots embedded in AlN have been studied by means of Raman spectroscopy as a function of the number of periods. The ${E}_{2H}$ phonon modes related to the quantum dots and AlN spacers are clearly resolved, and their energies allow monitoring the state of strain of the dots and AlN spacers simultaneously. The evolution of the measured phonon frequencies and the associated strains are discussed in comparison with theoretical calculations of the inhomogeneous strain distribution in a system of coherent misfitting inclusions.

Acoustic properties of nanoscale oxide heterostructures probed by UV Raman spectroscopy

2007

We study high quality molecular-beam epitaxy grown BaTiO3/SrTiO3 superlat-tices using ultraviolet Raman spectroscopy. In the low energy spectral region, acoustic phonon doublets are observed. These are due to the artificial superlattice periodicity and consequent folding of the acoustic phonon dispersion. From the study of samples with different BaTiO3/SrTiO3 layer thicknesses the effective sound velocities within each of the layers are obtained.

Phonon-induced optical superlattice

2005

We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.

Short range charge/orbital ordering in La1−xSrxMn1−zBzO3 (B = Cu,Zn) manganites

2005

We have measured the reflectivity spectra of La1−x SrxMn1−zBzO3 (B = Cu, Zn; 0.17 x 0.30; 0 z 0.10) manganites over wide frequency (100–4000 cm −1 )a nd temperature (80–300 K) ranges. Besides the previously observed infrared active modes or mode pairs at about 160 cm −1 (external mode), 350 cm −1 (bond bending mode) and 590 cm −1 (bond stretching mode), we have clearly observed two additional phonon modes at about 645 and 720 cm −1 below the temperature T1 (T1 < TC), which coincides with the phase transition temperature when the system transforms from ferromagnetic metallic into a ferromagnetic insulator state. This transition is related to the formation of short range charge/orbitally orde…

Thermal conductivity of group-IV Semiconductors from a Kinetic-Collective Model

2014

The thermal conductivity of group-IV semiconductors (silicon, germanium, diamond and grey tin) with several isotopic compositions has been calculated from a kinetic-collective model. From this approach, significantly different to Callaway-like models in its physical interpretation, the thermal conductivity expression accounts for a transition from a kinetic (individual phonon transport) to a collective (hydrodynamic phonon transport) behaviour of the phonon field. Within the model, we confirm the theoretical proportionality between the phonon–phonon relaxation times of the group-IV semiconductors. This proportionality depends on some materials properties and it allows us to predict the ther…

Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

2013

Electrochemical Synthesis of Hybrid Layered Thermoelectric Materials Based on PEDOT/SnS Doped with Ag

2021

Two-phonon magneto-Raman scattering in quantum wells: Fröhlich interaction

1996

We have developed a theoretical model of two-phonon resonant magneto-Raman scattering in a semiconductor quantum well (QW). Frohlich electron-phonon interaction has been considered and the corresponding selection rules are derived for Faraday geometry and backscattering configuration. The resonant profiles are analyzed as a function of magnetic field and laser energy. To simplify the discussion a three-band model with parabolic masses has been used as a first approach, studying later the role of heavy-hole light-hole admixture in the scattering process. It is shown that, due to mixing effects, Frohlich interaction contributes to the two-phonon Raman spectra in the parallel (z(σ ± , σ ± ) z)…

Pressure measurements of TO-phonon anharmonicity in isotopic ZnS

2004

We have measured the dependence on pressure of the line-widths of the TO and LO Raman phonons of β-ZnS. In order to enhance the phenomena observed, and to eliminate possible effects of isotopic disorder, we have measured a nearly isotopically pure crystal, 68 Zn 32 S. The strongly structured pressure effects observed are interpreted on the basis of anharmonic decay and the corresponding two-phonon density of states.

F-centre luminescence in nanocrystalline CeO2

2013

Nanocrystalline CeO2 powders were synthesized by two cost-effective methods: the self-propagating room temperature (SPRT) method and the precipitation method. Differently prepared samples exhibited different temperature-dependent photoluminescence (PL) in the ultraviolet and visible regions. The PL signals originated from different kinds of oxygen-deficient defect centres with or without trapped electrons (F0, F+ or F++ centres). The temperature-dependent PL spectra were measured using different excitation lines, below (457, 488 and 514?nm) or comparable (325?nm) to the ceria optical band gap energy, in order to investigate the positions of intragap localized defect states. Evidence for the…

An ab initio study of the polytypism in InP

2016

AbstractThe existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low density of narrow stacking faults regions. Our results confirm the type II band alignment between the phases, producing a reliable qualitative description of the band gap evolution along the growth axis. These results show an spacial asymmetry in the zincblende quantum wells, that is expected …

Thermoelectric properties of atomic-thin silicene and germanene nano-structures

2014

The thermoelectric properties in one- and two-dimensional silicon and germanium structures have been investigated using first-principles density functional techniques and linear response for the thermal and electrical transport. We have considered here the two-dimensional silicene and germanene, together with nanoribbons of different widths. For the nano ribbons, we have also investigated the possibility of nano structuring these systems by mixing silicon and germanium. We found that the figure of merit at room temperature of these systems is remarkably high, up to 2.5.

Two-LO-Phonon Resonant Raman Scattering in II-VI Semiconductors

1996

Recently, absolute values of socond-order Raman scattering efficiency have been measured around the E 0 and E 0 + Δ 0 critical points of several II-VI semiconductor compounds. The measurements were perfomed in the z(x,x)z backscattering configuration on (001) (ZnSe and ZnTe) and (110) (CdTe) surfaces. They show strong incoming and outgoing resonances around the baud gap and larger scattering efficiencies as compaered to III-V compounds. A theoretical model which includes excitons as intermediate states in the Raman process is shown to give a very good quantitative agreement between theory and experiment. Only a small discrepancy exists, while III-V compounds the discrepancies were close to …

Review on Polymers for Thermoelectric Applications.

2014

In this review, we report the state-of-the-art of polymers in thermoelectricity. Classically, a number of inorganic compounds have been considered as the best thermoelectric materials. Since the prediction of the improvement of the figure of merit by means of electronic confinement in 1993, it has been improved by a factor of 3-4. In the mean time, organic materials, in particular intrinsically conducting polymers, had been considered as competitors of classical thermoelectrics, since their figure of merit has been improved several orders of magnitude in the last few years. We review here the evolution of the figure of merit or the power factor during the last years, and the best candidates…

Pressure dependence of optical phonons in ZnCdSe alloys

2003

5 páginas, 2 figuras, 2 tablas.-- PACS 62.50.+p, 63.20.Dj, 78.30.Fs, 78.66.Hf.-- et al.

Optical Phonons in Quasi-One Dimensional Semiconductors

1993

A lagrangian formalism is systematically established for the treatment of long wavelength polar optical oscillations in quantum wires modeling the system as a macroscopic continuum. Fundamental equations for the vector displacement u and the electric potential ϕ are rigorously derived in the form of four coupled second order partial differential equations. Matching boundary conditions at the interfaces are also rigorously deduced from the fundamental equations and it is proved that no incompatibility between the mechanical and electrostatic matching boundary conditions exists. The case of AlAs-GaAs quantum wires with cylindrical symmetry is discussed.

Enhanced thermoelectric performance of PEDOT with different counter-ions optimized by chemical reduction

2014

This work reports on the synthesis of the intrinsically conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) doped with several counter-ions, ClO4, PF6 and bis(trifluoromethylsulfonyl)imide (BTFMSI), by electro-polymerization and its thermoelectric properties. We show that, depending on the counter-ion size, the thermoelectric efficiency of PEDOT can be increased up to two orders of magnitude. A further chemical reduction with hydrazine optimizes the power factor (PF). By changing the counter-ions, we were able to increase the electrical conductivity (σ) of PEDOT by a factor of three, while the Seebeck coefficient remains at the same order of magnitude in the three polymers. The best…

Phonon Dispersion of Wurtzite CdSe: The Bond Charge Model

2000

The phonon dispersion of wurtzite CdSe is presented along the main directions of the Brillouin zone. The study has been performed by using a bond charge model for wurtzite-type semiconductors with only six adjustable parameters. The results are compared against neutron scattering data and ab initio calculations. The phonon eigenvectors corresponding to the vibrational modes at the Γ-point are in very good agreement with the ab initio calculations.

Electric-field-induced Raman scattering in GaAs: Franz-Keldysh oscillations

1995

We have studied the influence of strong electric fields on the Raman scattering intensity from LO phonons in GaAs (100) at room temperature using laser excitation energies above the fundamental ${\mathit{E}}_{0}$ gap. Striking oscillations are found in the scattering intensity for configurations where either the deformation potential or Fr\"ohlich electron-phonon interaction contribute. The oscillations in the deformation-potential-mediated scattering intensity can be related to Franz-Keldysh oscillations derived from the ${\mathit{E}}_{0}$ gap, whereas a more complicated mechanism has to be invoked for processes where Fr\"ohlich interaction is responsible.

Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

2015

Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…

Electrical conductivity properties of expanded graphite-polycarbonatediol polyurethane composites

2014

Conductive polymer composites of segmented polycarbonatediol polyurethane and expanded graphite (EG) have been synthesized with different amounts of EG conductive filler (from 0 to 50 wt%). SEM, X-ray diffraction measurements, Fourier transform infrared and Raman spectroscopies demonstrated a homogeneous dispersion of the EG filler in the matrix. The dielectric permittivity of the composites showed an insulator to conductor percolation transition with increase in EG content. Significant changes in the dielectric permittivity take place when the weight fraction of EG is in the range 20–30 wt%. Special attention has been paid to the dependence of the conductivity on frequency, temperature and…

Triple magnetopolarons in quantum wells

1997

We derive the equations for eigenstates and eigenenergies of a triple magnetopolaron in quantum-well structures. An iteration procedure for obtaining the wave function and energy including the contributions of diagrams with crossing phonon lines is given. We show that under conditions of exact resonance the middle energy branch of the triply split magnetopolaron state consists of only two out of three bare states. We suggest the experimental verification of this prediction.

Observation of two-dimensional exciton-phonon quasibound states

1997

We demonstrate the existence of robust exciton-phonon quasibound states (EPQBS) in a two-dimensional semiconductor system, resulting from the binding of the ${e}_{1}{h}_{1}$ and ${e}_{1}{h}_{2}$ heavy-hole quantum-well excitons with an LO phonon. We show that increasing quantum confinement drastically weakens these two-dimensional EPQBS. A theoretical model including phonon confinement accounts qualitatively for our results.

Resonant Rayleigh scattering in quantum well structures

1996

Abstract We report continuous wave experiments on resonant Rayleigh scattering (RRS) performed on high quality GaAs AlGaAs quantum well structures. The simultaneous measurement of the resonant Rayleigh scattering and of the photoluminescence excitation (PLE) allows us to resolve very small differences between the two spectra. We show that, even in very good samples, there is a small but detectable Stokes shift of the RRS profile with respect to the PLE. It is also found that the RRS profile has a smaller linewidth and is sensitive to bound exciton transitions which are not detectable in the PLE. We compare our data with previous findings and discuss possible origins of the Stokes shift.

Microscopic carrier dynamics in quantum wells modulated by high-frequency lateral fields

2002

Abstract We have investigated the dynamics of photogenerated carriers in GaAs quantum wells under the influence of high-frequency fields produced by metal gratings and by surface acoustic waves (SAW's) using spatially and time-resolved photoluminescence (PL). The frequency and phase of the PL oscillations induced by the high-frequency field yield information about the spatial distribution of the carriers and, in the case of SAW's, about the band-gap modulation induced by the SAW strain.

Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

2008

http://link.aip.org/link/?JAPIAU/104/033523/1

Raman study of strain in GaN/AlN quantum dot multilayered structures

2005

Raman spectroscopy has been used to investigate self-assembled stacks of GaN/AlN quantum dots with increasing number of periods. The E2H phonon modes associated to GaN and AlN are clearly resolved with visible excitation, and their energies allow the simultaneous monitoring of the dot and barrier strain states. The compression of the quantum dots is evidenced by a shift of the E2H phonon mode of circa 29 cm–1 to higher energies with respect to its relaxed value. The strain of the AlN spacer is found to be correlated to that of the dot, with an increase in its tensile component for the samples with fewer periods and a partial relaxation for samples over 50 periods. Additionally, resonant eff…

Raman scattering as a tool for the evaluation of strain inGaN∕AlNquantum dots: The effect of capping

2007

The strain state of $\mathrm{Ga}\mathrm{N}∕\mathrm{Al}\mathrm{N}$ quantum dots grown on $6H\text{\ensuremath{-}}\mathrm{Si}\mathrm{C}$ has been investigated as a function of AlN capping thickness by three different techniques. On the one hand, resonant Raman scattering allowed the detection of the ${A}_{1}(\mathrm{LO})$ quasiconfined mode. It was found that its frequency increases with AlN deposition, while its linewidth did not evolve significantly. Available experiments of multiwavelength anomalous diffraction and diffraction anomalous fine structure on the same samples provided the determination of the wurtzite lattice parameters $a$ and $c$ of the quantum dots. A very good agreement is …

Tuning the exciton luminescence in an acoustically depleted two-dimensional electron gas

2007

Standing-wave piezoelectric fields can be used to vary spatially and temporally charge conditions in $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ quantum wells (QWs), offering a versatile tool to control the two-dimensional electron gas (2DEG) density in the well. A $\mathrm{Li}\mathrm{Nb}{\mathrm{O}}_{3}$ piezoelectric resonator imparts a MHz-frequency oscillating piezoelectric field with a controllable ratio of the in-plane and the vertical field components to a 2DEG placed in close proximity to the plate surface. This allows us to dynamically tune the charge state in the plane of the QW and to influence the photoluminescence spectra. It is found that spatially distributed r…

Tunable arrayed waveguide grating driven by surface acoustic waves

2016

We present a design approach for compact reconfigurable phased-array wavelength-division multiplexing (WDM) devices with N access waveguides (WGs) based on multimode interference (MMI) couplers. The proposed devices comprise two MMI couplers which are employed as power splitters and combiners, respectively, linked by an array of N single-mode WGs. First, passive devices are explored. Taking advantage of the transfer phases between the access ports of the MMI couplers, we derive very simple phase relations between the arms that provide wavelength dispersion at the output plane of the devices. When the effective refractive index of the WGs is modulated with the proper relative optical phase d…

Raman and infrared studies ofLa1−ySryMn1−xMxO3(M=Cr, Co, Cu, Zn, Sc or Ga): Oxygen disorder and local vibrational modes

2006

We present results of our study of polarized Raman scattering and infrared reflectivity of rhombohedral ceramic La1-ySryMn1-xMxO3 manganites in the temperature range between 77 and 320 K. In our samples, a part of the Mn atoms is substituted by M = Cr, Co, Cu, Zn, Sc, or Ga with x in the range 0-0.1. The hole concentration was kept at the optimal value of about 32% by tuning the Sr content y. We have monitored distortions of the oxygen sublattice by the presence of broad bands in the Raman spectra, the increase of dc resistivity extracted from the infrared reflectivity, and the change of the critical temperature of the ferromagnetic transition. Our results support the idea that these proper…

On the theoretical analysis of the lowest many-electron states for cyclic zigzag graphene nano-ribbons

2014

We have calculated the optical and magnetic properties of the four lowest many-body states for cyclic zigzag graphene nano-ribbons (GNRs). The results have been obtained within the semi-empirical restricted frozen Hartree?Fock approximation. Firstly, we obtained one-determinant numerical and analytical coincident results. We detected the existence of two degenerate open-shell molecular orbitals (MOs) o, o?. Due to this degeneracy, some of the mentioned results do depend on any (arbitrary) orthogonal transformation between these two MOs. We have improved these preliminary results by using linear combinations of two determinants, which are eigenfunctions of the operators, which commute with t…

Effect of nanostructuration on the spin crossover transition in crystalline ultrathin films† †Electronic supplementary information (ESI) available: M…

2019

Film thickness and microstructure critically affect the spin crossover transition of a 2D coordination polymer.

On-Capillary Surface-Enhanced Raman Spectroscopy: Determination of Glutathione in Whole Blood Microsamples.

2018

Oxidative stress monitoring in the neonatal period supports early outcome prediction and treatment. Glutathione (GSH) is the most abundant antioxidant in most cells and tissues, including whole blood, and its usefulness as a biomarker has been known for decades. To date, the available methods for GSH determination require laborious sample processing and the use of sophisticated laboratory equipment. To the best of our knowledge, no tools suitable for point-of-care (POC) sensing have been reported. Surface-enhanced Raman spectroscopy (SERS), performed in a microvolume capillary measurement cell, is proposed in this study as a robust approach for the quantification of GSH in human whole blood…

Poly(3,4-Ethylenedioxythiophene) nanoparticles as building blocks for hybrid thermoelectric flexible films

2019

Hybrid thermoelectric flexible films based on poly(3,4-ethylenedioxythiophene) (PEDOT) nanoparticles and carbon nanotubes were prepared by using layer-by-layer (LbL) assembly. The employed PEDOT nanoparticles were synthesized by oxidative miniemulsion polymerization by using iron(III) p-toluenesulfonate hexahydrate (FeTos) as an oxidant and poly(diallyldimethylammonium chloride) (PDADMAC) as stabilizer. Sodium deoxycholate (DOC) was used as a stabilizer to prepare the aqueous dispersions of the carbon nanotubes. Hybrid thermoelectric films were finally prepared with different monomer/oxidant molar ratios and different types of carbon nanotubes, aiming to maximize the power factor (PF). The …

Two‐Dimensional Electron Gas Effects on the Photoluminescence from a Nonintentionally Doped AlGaN/GaN Heterojunction

2002

Photoluminescence measurements on an AlGaN/GaN single heterojunction (SH), where piezoelectric and spontaneous polarization effects confine a two-dimensional electron gas (2DEG), are presented. Well-defined emissions between the bulk excitonic transitions and their LO-phonon replica are attributed to spatially indirect excitons located close to the interface. The strong interfacial electric field separates photogenerated holes and electrons, weakening their Coulomb interaction and causing a blueshift with increasing excitation intensity due to carrier population effects. In addition, direct experimental proof is obtained by applying an electric field normal to the interface. An energy shift…

Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells

2009

The electronic structure of wurtzite semiconductor superlattices (SLs) and quantum wells (QWs) is calculated by using the empirical tight-binding method. The basis used consists of four orbitals per atom (sp3 model), and the calculations include the spin-orbit coupling as well as the strain and electric polarization effects. We focus our study on GaN/AlN QWs wells grown both in polar (C) and nonpolar (A) directions. The band structure, wave functions and optical absorption spectrum are obtained and compared for both cases.

Three dimensional PEDOT nanowires network

2016

Abstract A three dimensional (3D) structure of poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires have been prepared by electrochemical polymerization using 3D-alumina templates. The templates were synthesized by pulse anodization in an electrochemical bath. A 3D free standing network has been obtained after the template removal. The morphological analysis by electron microscopy shows the existence of a 3D PEDOT nanowires network whose nanowire diameter is around 20 nm for the vertical nanowires and 10 nm for the transversal connections. Electrical properties such as the I–V characteristics and the Seebeck coefficient were studied for the nanowires network. Also, the optical properties have…

Valence-band splitting energies in wurtzite InP nanowires : Photoluminescence spectroscopy and ab initio calculations

2010

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, r…

Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

2000

Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…

Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy

2002

Abstract We report on luminescence and Raman scattering measurements of zincblende Zn0.5Cd0.5Se thin film grown by molecular beam epitaxy. From the luminescence data of the exciton peak, the dependence of the energy gap with temperature [ d E g / d T=(4.35±0.01)×10 −4 meV / K ] and zero-temperature phonon renormalization energy ( Δ E(0)=30±1 meV ) have been obtained. The broadening of the excitonic emission as the temperature increases is mainly due to scattering processes with longitudinal optical phonons and residual ionized impurities. Raman scattering shows a multiphonon structure, which depends on the temperature. At low temperatures, up to the fifth-order phonon peaks appear due to re…

Resonant hyper-Raman scattering in semiconductors

1998

A theoretical model for resonant hyper-Raman scattering by LO phonons is developed, taking into account excitonic effects. The model is valid for energies below and above an allowed absorption edge. The matrix elements corresponding to the exciton-photon and exciton-phonon interactions are derived analytically, and their contributions to the total scattering efficiency are analyzed. The two main electron-phonon interaction mechanisms present in polar semiconductors, deformation potential, and Fr\"ohlich interaction, are considered. It is shown that the one-phonon resonance hyper-Raman scattering mediated by the deformation potential interaction is dipole forbidden, whereas it is allowed whe…

Photoluminescence study of excitons in homoepitaxial GaN

2001

High-resolution photoluminescence spectra have been measured in high-quality homoepitaxial GaN grown on a free-standing GaN substrate with lower residual strain than in previous work. Unusually strong and well-resolved excitonic lines were observed. Based on free- and bound exciton transitions some important GaN parameters are derived. The Arrhenius plot of the free A exciton recombination yields a binding energy of 24.7 meV. Based on this datum, an accurate value for the band-gap energy, EG(4.3 K) = 3.506 eV, can be given. From the donor bound excitons and their “two-electron” satellites, the exciton localization energy and donor ionization energy are deduced. Finally, estimates of the ele…

Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

2001

Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…

Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires (vol 84, 085318, 2011)

2012

We found out that the polar pattern for the zinc-blende InAs LO mode displayed in Fig. 2(b) of our original paper represents the backscattering Raman intensities from a (11¯2) top surface and not as stated in the original manuscript from a (110) top surface.In the latter the LO mode is forbidden for all configurations.

Ab initio electronic band structure calculation of InP in the wurtzite phase

2011

Abstract We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a = 0.4150 nm , c = 0.6912 nm , and an internal parameter u = 0.371 , showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actu…

Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films

2008

The recombination processes around the excitonic region of undoped ZnSe and chlorine doped ZnSe thin films were studied by continuous-wave photoluminescence (cw-PL) and time-resolved photoluminescence (TRPL) spectroscopies. Samples with different chlorine concentration were obtained by varying the temperature of the Cl source. The evolution of the PL signal and its decay time were analyzed as a function of temperature. Activation energy (Ea) values associated to the quenching of the D0X and band-to-band emission were obtained from the temperature dependent cw-PL experiments. The activation energy was lower for the film with higher Cl content. The characteristic exponential decay time (TPL) …

Excitonic effects in two-LO-phonon resonant Raman scattering.

1993

Abstract The role of electron-hole correlation in resonant Raman scattering by two LO-phonons is analyzed. A theoretical model including excitons belonging to the discrete and continuous spectra as virtual intermediate states in the Raman process and valid for incident energies below and above the gap is developed. For the exciton-phonon coupling the Frohlich Hamiltonian is considered. The most important contribution to the Raman scattering efficiency corresponds to the continuous→discrete→discrete exciton transition, followed by the discrete→discrete→discrete and the continuous→continuous→discrete ones. The model is tested for GaP, where the scattering efficiency data are available around …

Optical phonons in theNaTiSi2O6oxide withS=12spin chains

2005

. The infrared-active phonon frequencies are obtained by Kramers-Kronig analy-sis of the reflectivity data. The assignment of the observed modes is done using lattice dynamical calculationsbased on the valence shell model. A phase transition at about 210 K is manifested through a dramatic changeof the mode frequency and broadening, and the appearance of new phonon modes. Analyzing the phononfrequency and damping vs temperature we have found that the phase transition leaves a fingerprint in thephonon dynamics of NaTiSi

Spatiotemporal carrier dynamics in quantum wells under surface acoustic waves

2004

We present a theoretical study of transport and recombination of electrons and holes in quantum wells under the piezoelectric field induced by a surface acoustic wave (SAW). Our model calculations, which include free carriers and excitons in the framework of the drift-diffusion equations, describe the spatial and time dependences of the photoluminescence intensity on excitation density and SAW amplitude, and show overall agreement with recent microphotoluminescence experiments performed on GaAs/(Al,Ga)As quantum wells and quantum wires.

Dynamics of the incorporation of Co into the wurtzite ZnO matrix and its magnetic properties

2015

Made available in DSpace on 2022-04-29T07:25:55Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-07-25 Financiadora de Estudos e Projetos Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Abstract Bulk Co-doped ZnO (Zn1-xCoxO) samples were prepared and studied with particular emphasis on their compositions, structures, and magnetic properties. A detailed microstructural analysis was conducted to investigate the nature of Co incorporation into the wurtzite ZnO matrix. The Zn1-xCoxO ceramic samples were prepared using the standard solid-state reaction method with different Co molar concentrations of u…

Effects of quantum statistics of phonons on the thermal conductivity of silicon and germanium nanoribbons.

2012

: We present molecular dynamics simulation of phonon thermal conductivity of semiconductor nanoribbons with an account for phonon quantum statistics. In our semiquantum molecular dynamics simulation, dynamics of the system is described with the use of classical Newtonian equations of motion where the effect of phonon quantum statistics is introduced through random Langevin-like forces with a specific power spectral density (color noise). The color noise describes interaction of the molecular system with the thermostat. The thermal transport of silicon and germanium nanoribbons with atomically smooth (perfect) and rough (porous) edges are studied. We show that the existence of rough (porous)…

Resonant Rayleigh scattering by confined two-dimensional excitonic states

1997

A systematic study of resonant Rayleigh scattering in semiconductor single quantum wells has been carried out. The dependence of the scattering efficiency on the well width and the temperature has been investigated. The behaviour observed in the resonant Rayleigh spectra can be explained in terms of the confinement of the excitonic states in the plane of the well due to fluctuations in the well width. A microscopic theoretical model for the elastic scattering of light by weakly confined two-dimensional excitonic states has been developed. The Rayleigh scattering efficiency has been calculated to the lowest-order of perturbation theory and the results found to be in good agreement with the e…

Thermoelectric Effects: Semiclassical and Quantum Approaches from the Boltzmann Transport Equation

2013

The thermoelectric efficiency of a material depends on its electronic and phononic properties. It is normally given in terms of the dimensionless figure of merit Z T = σ S 2 T ∕ κ. The parameters involved in Z T are the electrical conductivity σ, the Seebeck coefficient S, and the thermal conductivity κ. The thermal conductivity has two contributions, κ = κ e + κ L , the electron thermal conductivity κ e and the lattice thermal conductivity κ L . In this chapter all these parameters will be deduced for metals and semiconductors, starting from the Boltzmann transport equation (BTE). The electrical conductivity, the Seebeck coefficient, and the electronic thermal conductivity will be obtained…

Novel phase transitions in B-site doped manganites

2005

We have examined the infrared reflectivity and the electrical resistivity of La 1-x [Sr(Ba)] x Mn 1-z [Cu(Zn)] z O 3 samples in ferromagnetic metallic and insulator regime. Several phase transitions are observed, the most obvious being the transition from a ferromagnetic metallic to a ferromagnetic insulator phase that is related to the formation of short-range orbitally ordered domains. The temperature T 1 of the phase transition is dependent on doping concentration and for optimally doped samples (∼32% of Mn 4+ ions) we have found T 1 0.93 T C .

Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts

2011

We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for…

Effect of Pressure on Direct Optical Transitions of ?-InSe

2000

We have investigated the effect of hydrostatic pressure on direct optical transitions of the layered semiconductor γ-InSe by photoreflectance (PR) spectroscopy (T = 300 K). In addition, electroreflectance (ER) measurements were performed at ambient pressure. Six structures are resolved in the ER spectra in the energy range from 1.1 to 3.6 eV. The pressure dependence of four of these structures was determined by PR spectroscopy for pressures up to 8 GPa. In order to assign the features observed above the fundamental gap we have carried out band structure calculations for InSe at ambient pressure using a full-potential linear augmented plane wave method. Based on calculated band gap deformati…

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

2002

5 páginas, 4 figuras, 1 tabla.

In Situ Synthesis of Conducting Polymers: A Novel Approach toward Polymer Thermoelectrics

2020

The efficient conversion of thermal energy into electricity by means of durable and scalable solid-state thermoelectric devices has been a well stablished aim. Electrically conducting polymers have...

Photoluminescence from strained InAs monolayers in GaAs under pressure

1994

bulk GaAs. At pressures above the band crossover two emission bands are observed. These bands, characterized by having negative pressure coefBcients, are attributed to the type-I transition between conduction-band X „and heavy-hole states of the InAs monolayer and the type-II transition &om X states in GaAs to InAs heavy-hole states. The results are interpreted in terms of tight-binding band-structure calculations for the strained InAs-monolayer — bulk-GaAs system. I. INTRODUCTION Highly strained InAs jGaAs heterostructures have recently attracted interest due to their unusual electronic and optical properties. ~ 4 Epitaxial isomorphic growth of InAs on GaAs can be achieved only up to a sma…

Optical emission of InAs nanowires

2012

Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to…

Raman scattering inβ-ZnS

2004

The first- and second-order Raman spectra of cubic ZnS $(\ensuremath{\beta}$-ZnS, zinc-blende) are revisited. We consider spectra measured with two laser lines for samples with different isotopic compositions, aiming at a definitive assignment of the observed Raman features and the mechanisms which determine the linewidth of the first order TO and LO Raman phonons. For this purpose, the dependence of the observed spectra on temperature and pressure is investigated. The linewidth of the TO phonons is found to vary strongly with pressure and isotopic masses. Pressure runs, up to 15 GPa, were performed at 16 K and 300 K. Whereas well-defined TO Raman phonons were observed at low temperature in…

Very Long Term Stabilization of a 2D Magnet down to the Monolayer for Device Integration

2020

2D materials have recently demonstrated a strong potential for spintronic applications. This has been further reinforced by the discovery of ferromagnetic 2D layers. Nevertheless, the fragility of ...

An Approach on the Hydrogen Absorption in Carbon Black after Gamma Irradiation

2013

In this work, different samples of an industrial carbon black are used to study the hydrogen intake from an over pres-surized atmosphere and its changes due to alteration of its level of crystallinity produced by ¿-irradiation. The monitor-ing of the hydrogen adsorption was made by means of thermogravimetric analysis and by measurements of some elec-trical parameters as the Seebeck coefficient. X-ray diffraction shows that the irradiation diminishes the level of crystal-line perfection. These results show interesting possibilities to use carbon black as cheap hydrogen absorbers.

The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy

2016

We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm−1 . For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in nonstoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the l…

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

2013

Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different electronic band gap when compared with that grown in the zinc-blende phase. The electronic gap of wurtzite InAs at the Gamma-point of the Brillouin zone (E0 gap) has been recently measured, E0 = 0.46 eV at low temperature. The electronic gap at the A point of the Brillouin zone (equivalent to the L point in the zinc-blende structure, E1) has also been obtained recently based on a resonant Raman scattering experiment. In this work, we calculate the band st…

Compact acousto-optic multimode interference device in (Al,Ga)As.

2020

Multimode interference (MMI) devices are key components in modern integrated photonic circuits. Here, we present acoustically tuned optical switches on an (Al,Ga)As platform that enable robust, compact and fast response systems improving on recently demonstrated technology. The device consists of a 2 × 2 MMI device fine-tuned in its center region by a focused surface acoustic wave (SAW) beam working in the low GHz range. In this way, we can tune the refractive index profile over a narrow modulation region and thus control the optical switching behaviour via the applied SAW intensity. Direct tuning of the MMI device avoids losses and phase errors inherent to arrayed waveguide based switches,…

Study of inversion domain pyramids formed during the GaN:Mg growth

2003

AbstractThestudyofstructuraldefectsinducedbytheintroductionofMgduringthegrowthofMOCVDGaNispresented.Themagnesiumincorporationintothecrystalgrowthnotonlyinduceschangesinthestackingsequencefromhex-agonaltocubicstructures,butalsoinvertstheGaNpolarityfromGa-facetoN-face.Basedonthedifferentsurfacestructureandsurfacemigrationlengthofabsorbingprecursorsforeachpolaritytype(Ga-orN-face),the3DgrowthontopoftheN-facetriangulardefectisdescribed.TheN-facematerialischaracterizedbythreedanglingbondsofni-trogenthatpointuptowardthec-planesurface,enhancingthecrystalgrowthalongthec-axis. 2002ElsevierScienceLtd.Allrightsreserved. Keywords:Inversiondomain;Stackingfault;Polarity 1. IntroductionFurther progress tow…

Raman Scattering in CuCl under Pressure

1999

Raman spectra of CuCl were measured under hydrostatic pressures up to 14 GPa at low temperatures (T = 5 K). The anomaly in the Raman lineshape of zincblende CuCl at frequencies near the transverse-optic (TO) mode, which consists of a broad structure with several maxima, disappears at a pressure near 3 GPa. This effect is well reproduced by a model calculation of the anharmonic coupling of the TO mode to acoustic two-phonon states (Fermi resonance). Alternative interpretations of the TO Raman anomaly in terms of local vibrational modes of Cu atoms in off-center positions are not supported by the present results. Raman spectra indicate the existence of the phase CuCl-IIa in a narrow pressure …

Optical studies of gap, hopping energies, and the Anderson-Hubbard parameter in the zigzag-chain compoundSrCuO2

2001

We have investigated the electronic structure of the zig-zag ladder (chain) compound ${\mathrm{SrCuO}}_{2}$ combining polarized optical absorption, reflection, photoreflectance, and pseudo-dielectric-function measurements with the model calculations. These measurements yield an energy gap of 1.42 eV (1.77 eV) at 300 K along (perpendicular to) the Cu-O chains. We have found that the lowest-energy gap, the correlation gap, is temperature independent. The electronic structure of this oxide is calculated using both the local-spin-density approximation with gradient correction method and the tight-binding theory for the correlated electrons. The calculated density of electronic states for noncor…

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

2015

Abstract In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiN x /Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 ¯ 1 } planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm −1 ) with crystal quality comparable to bu…

PEDOT thin films with n-type thermopower

2019

peer-reviewed Synthesis of n-type organic semiconductors is challenging as reduced states are difficult to obtain due to their instability in air. Here, we report tailoring of semiconducting behavior through control of surfactant concentration during synthesis of poly(3,4-ethylenedioxythiophene) (PEDOT) nanoparticles. Nanoparticles were synthesized by mini-emulsion polymerization, where stable suspensions were used to produce polymer films by a simple casting technique on polyethylene terephthalate (PET) substrates. Electrical conductivity and Seebeck coefficients were measured as a function of surfactant concentration. It was found that conductivity decreases three orders of magnitude as s…

Thermal sensor based on a polymer nanofilm

2016

In this work, we have developed a thermal sensor based on poly(3,4 ethylenedioxythiophene) (PEDOT) nanofilms as thermoelectric material. The PEDOT nanofilms have been synthesized by the electrochemical polymerization method. The thicknesses of the films were around 120 nm. The doping level of PEDOT was controlled by chemical reduction using hydrazine. The achieved Seebeck coeficient is 40 uV/K. A PEDOT nanofilm was integrated into an electronic circuit that amplifies the voltage originated from the Seebeck effect. The temperature increment produced by a fingerprint touching the film is enough to switch on a light emitting diode. Peer Reviewed

Low temperature mobilities of 2-D electrons in indium selenide: Neutral and ionized impurity scattering

1992

Abstract Low temperature mobility of 2-D electrons in indium selenide is calculated, taking into account neutral and ionized impurity scattering. Two-dimensional electric subbands are originated due to quantum size effects, at both sides of thin ϵ-polytype layers, separated by two stacking faults from the bulk γ-InSe. Ionized impurities are in the ϵ-layer and then, spatially separated from 2-D electrons. Neutral impurities are adsorbed to stacking faults in the ϵ-γ interface. A relaxation time for dipole-like neutral impurity scattering is deduced. Calculated mobilities are compared to previous experimental results and the areal concentration of the neutral impurities is so estimated. The i…

Lattice phonon modes of the high-pressure phase CuCl-IV

1999

Raman spectra of isotopically pure CuCl samples ${(}^{63}\mathrm{CuCl}$ and ${}^{65}\mathrm{CuCl})$ were measured under hydrostatic pressure up to 14 GPa at low temperature $(5 \mathrm{K}).$ Up to six Raman modes were resolved for the binary BC8-analog phase CuCl-IV in the range from 4.1 to 14 GPa. The phonon dispersion relations of this phase were calculated within a rigid ion model. Based on this calculation an assignment for the observed Raman-active modes is proposed. The calculated pressure dependences of mode frequencies reproduce the experimental results. Raman spectra support the existence of the phase CuCl-IIa in a narrow pressure range from 3.3 to 4.1 GPa.

Doped ZnS:Mn nanoparticles obtained by sonochemical synthesis.

2010

A study of sonochemically synthesized ZnS:Mn nanoparticles is presented. The particles prepared at low rf power (about 20 W) and room temperature coalesce to form morphologically amorphous large species (30-100 nm in diameter). As the power is increased in the range from 20 to 70 W, and the solution temperature is raised to 60 to 80 degrees C, finer particles are produced with the size ranging from 2 to 20 nm and improved crystallinity. The results indicate the dispersion of the Mn(2+) ions at near-surface sites in the particles. It is shown that the sonochemically fabricated particles approach the quality of the ones obtained by a standard chemical route and show a reasonable luminescence …

Hybrids composites of NCCO/PEDOT for thermoelectric applications

2017

Abstract Organic materials are becoming a realistic roadway to fabricate efficient thermoelectric devices using environmental friendly materials. Such requirements are actually fulfilled by thermoelectric generators operating by conducting polymers, but also by hybrid materials. The combination of organic + inorganic compounds may exhibit a high electrical conductivity and Seebeck coefficient as well as lower thermal conductivity in order to efficiently generate thermoelectric power. In these hybrid compounds, perovskite-type oxides are a suitable election for the inorganic part since they have a high Seebeck coefficient although their electrical conductivity is usually low. Blending them w…

In Situ Synthesis of Polythiophene and Silver Nanoparticles within a PMMA Matrix: A Nanocomposite Approach to Thermoelectrics

2022

The processability of organic thermoelectric materials plays a crucial role due to their clear advantages of applicability in large-scale areas compared to traditional inorganic counterparts. A promising way to process thermoelectric materials based on conductive polymers is through in situ polymerization in an insulating polymer matrix. This work shows an interpenetrating polymeric network based on polythiophene, silver nanoparticles (Ag NPs), and poly(methyl methacrylate) (PMMA) produced by the oxidative polymerization of terthiophene by an oxidizing silver salt in a PMMA matrix. Ag NPs are in situ synthesized simultaneously as a byproduct. The reaction occurs very fast in the solid state…

Resonant hyper-Raman scattering in semiconductors: Excitonic effects

1999

Abstract A theoretical model of resonant hyper-Raman scattering involving two incident photons of frequency ωL is developed. The model is valid for energies 2ℏωL around the absorption edge of the semiconductor, and takes into account Wannier excitons as intermediate states in the scattering process. Both deformation potential and Frohlich interaction are included in the model: It is found that Frohlich-mediated scattering is a dipole-allowed process, in contrast to one-phonon Raman scattering, where the Frohlich mechanism is dipole-forbidden. We have performed numerical calculations of the resonance profile (hyper-Raman cross-section versus 2ℏωL) and applied our model to materials with dipo…

Raman signal reveals the rhombohedral crystallographic structure in ultra-thin layers of bismuth thermally evaporated on amorphous substrate

2021

Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultra-thin layers of Bi, down to $\sim 5$ nm. Moreover, the signals also reveal that bismuth films expo…

Catalytic oxidation of n-hexane promoted by Ce1-xCuxO2 catalysts prepared by one-step polymeric precursor method

2013

Abstract Ceria-supported copper catalysts (Ce1−xCuxO2, with x (mol) = 0, 0.01, 0.03, 0.05 and 0.10) were prepared in one step through the polymeric precursor method. The textural properties of the catalysts were investigated by X-ray diffraction (XRD), Rietveld refinement, N2-physisorption (BET surface area), electron paramagnetic resonance (EPR), UV–visible diffuse reflectance and photoluminescence spectroscopies and temperature-programmed reduction (TPR). In a previous study ceria-supported copper catalysts were found to be efficient in the preferential oxidation of CO. In this study, we extended the catalytic application of Ce1−xCuxO2 systems to n-hexane oxidation and it was verified tha…

Effect of pressure on the structural properties and electronic band structure of GaSe

2007

The structural properties of GaSe have been investigated up to 38 GPa by monochromatic X-ray diffraction. The onset of the phase transition from the e-GaSe to a disordered NaCi-type structural motif is observed near 21 GPa. Using the experimentally determined lattice parameters of the layered e-phase as input, constrained ab-initio total energy calculations were performed in order to optimize the internal structural parameters at different pressures. The results obtained for the nearest-neighbor Ga-Se distance agree with those derived from recent EXAFS measurements. In addition, information is obtained on the changes of Ga-Ga and Se-Se bond lengths which were not accessible to a direct expe…

Reconfigurable photonic routers based on multimode interference couplers

2015

We present a design approach for compact reconfigurable light routers with N access waveguides (WGs) based on multimode interference (MMI) couplers. The proposed devices comprise two MMI couplers, which are employed as power splitters and combiners, respectively, linked by an array of N single-mode WGs. When the effective refractive index of the WGs is modulated with the proper relative optical phase difference, the light can switch paths between the preset output channel and the remaining output WGs. Taking advantage of the transfer phases between the access ports of the MMI couplers, we derive very simple phase relations between the modulated WGs that enable the reconfiguration of the out…

Electron–phonon effects on the direct band gap in semiconductors: LCAO calculations

2002

Abstract Using a perturbative treatment of the electron–phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band in…

Monolayer-to-mesoscale modulation of the optical properties in 2D CrI3 mapped by hyperspectral microscopy

2023

Magnetic 2D materials hold promise to change the miniaturization paradigm of unidirectional photonic components. However, the integration of these materials in devices hinges on the accurate determination of the optical properties down to the monolayer limit, which is still missing. By using hyperspectral wide-field imaging at room temperature, we reveal a nonmonotonic thickness dependence of the complex optical dielectric function in the archetypal magnetic 2D material CrI3 extending across different length scales: onsetting at the mesoscale, peaking at the nanoscale, and decreasing again down to the single layer. These results portray a modification of the electronic properties of the mat…

Polarized and resonant Raman spectroscopy on single InAs nanowires

2011

We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculatio…

X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC.

2009

By means of x-ray absorption near-edge structure (XANES) several Ga(1-x)Mn(x)N (0.03x0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien…

Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

2017

There is a growing interest in the property dependence of transition metal dichalcogenides as a function of the number of layers and formation of heterostructures. Depending on the stacking, doping, edge effects, and interlayer distance, the properties can be modified, which opens the door to novel applications that require a detailed understanding of the atomic mechanisms responsible for those changes. In this work, we analyze the electronic properties and lattice dynamics of a heterostructure constructed by simultaneously stacking InSe layers and GaSe layers bounded by van der Waals forces. We have assumed the same space group of GaSe, $P\overline{6}m2$ as it becomes the lower energy conf…

Spatial correlation of laser-generated electrons and holes in quantum wells

1995

The spatial correlation of hot electrons and holes generated by light in a semiconductor quantum well (QW) is studied. For hot electron-hole pairs in a polar material, this correlation is determined by the interaction with LO-phonons. We analyze the distribution F N (r, K) of electrons and holes which are created in a given light absorption process, with respect to their relative separation r and total quasimomentum ħK, after the emission of a number N of LO-phonons. The relationship between the spatial distribution of electrons and holes in these intermediate states and the cross-section of multi-phonon resonant Raman scattering (MPRRS) is established. Spatial correlation effects are stron…

Vibrational Properties of InSe under Pressure: Experiment and Theory

1996

The pressure dependence of the phonon modes in the layered semiconductor γ-InSe has been investigated experimentally and theoretically for pressures up to 11 GPa. The mode Gruneisen parameters of all Raman-active zone-center phonons have been determined by Raman scattering under pressure. In addition, features corresponding to second and third-order scattering processes are apparent in the Raman spectra under resonance conditions, from which information about zone-edge modes can be obtained. For the assignment of the observed Raman features to vibrational modes we have calculated the phonon dispersion curves using a rigid-ion model including couplings to first-nearest neighbors and long-ran…

Ab initio structural and electronic band-structure study of MgSe

2015

We present a careful and detailed ab initio study of the crystal structure and electronic band structure of different crystalline phases of MgSe. Calculations were performed using the full-potential linear augmented plane wave method. To determine the crystal phase of the ground state of MgSe, we computed the total energy as a function of volume for the rock-salt, zinc-blende, wurtzite, and NiAs phases. From the optimized volume, and by using the Birch–Murnaghan equation of state the lattice parameters , the bulk moduli, and its first pressure derivative () for the different phases of MgSe were found. In our calculations, we have used the local density approach for the exchange–correlation …

Optical Techniques for Nanostructure Characterization

2015

Acoustically tunable photonic structures based on microcavity polaritons

2006

Abstract The interaction between surface acoustic waves (SAWs) with (Al,Ga)As microcavity polaritons results in the formation of a dynamic optical superlattice with folded light dispersion and energy stop bands when the lower polariton branch is predominantly of photonic character. For small detunings between the excitonic and optical cavity resonances, the SAW bleaches the polariton resonances through the efficient dissociation of the excitons by its piezoelectric field.

Electrochemical Synthesis of an Organic Thermoelectric Power Generator.

2020

[EN] Energy harvesting through residual heat is considered one of the most promising ways to power wearable devices. In this work, thermoelectric textiles were prepared by coating the fabrics, first with multiple-wall carbon nanotubes (MWCNTs) by using the layer-by-layer technique and second with poly(3,4-ethylenedioxythiophene) (PEDOT) deposited by electrochemical polymerization. Sodium deoxycholate and poly(diallyldimethylammonium chloride) were used as stabilizers to prepare the aqueous dispersions of MWCNTs. The electrochemical deposition of PEDOT on the MWCNT-coated fabric was carried out in a three-electrode electrochemical cell. The polymerization of PEDOT on the fabric increased the…

Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

2003

A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Light-induced nonthermal population of optical phonons in nanocrystals

2017

Raman spectroscopy is widely used to study bulk and nanomaterials, where information is frequently obtained from spectral line positions and intensities. In this study, we monitored the Raman spectrum of ensembles of semiconductor nanocrystals (NCs) as a function of optical excitation intensity (optical excitation experiments). We observe that in NCs the red-shift of the Raman peak position with increasing light power density is much steeper than that recorded for the corresponding bulk material. The increase in optical excitation intensity results also in an increasingly higher temperature of the NCs as obtained with Raman thermometry through the commonly used Stokes/anti-Stokes intensity …

Review on Raman scattering in semiconductor nanowires: I. theory

2013

Raman scattering is a nondestructive technique that is able to supply information on the crystal and electronic structures, strain, temperature, phonon-phonon, and electron-phonon interaction. In the particular case of semiconductor nanowires, Raman scattering provides addi- tional information related to surfaces. Although correct, a theoretical approach to analyze the surface optical modes loses critical information when retardation is neglected. A comparison of the retarded and unretarded approaches clarifies the role of the electric and magnetic polarization in the Raman selection rules. Since most III-V compounds growing in the zincblende phase change their crystal structure to wurtzite…

Thermally Tunable Surface Acoustic Wave Cavities

2020

We experimentally demonstrate the dynamical tuning of the acoustic field in a surface acoustic wave (SAW) cavity defined by a periodic arrangement of metal stripes on LiNbO3 substrate. Applying a dc voltage to the ends of the metal grid results in a temperature rise due to resistive heating that changes the frequency response of the device up to 0.3%, which can be used to control the acoustic transmission through the structure. The timescale of the switching is demonstrated to be of about 200 ms. In addition, we have also performed finite-element simulations of the transmission spectrum of a model system, which exhibits a temperature dependence consistent with the experimental data. The adv…

Raman Spectra of ZrS2 and ZrSe2 from Bulk to Atomically Thin Layers

2016

In the race towards two-dimensional electronic and optoelectronic devices, semiconducting transition metal dichalcogenides (TMDCs) from group VIB have been intensively studied in recent years due to the indirect to direct band-gap transition from bulk to the monolayer. However, new materials still need to be explored. For example, semiconducting TMDCs from group IVB have been predicted to have larger mobilities than their counterparts from group VIB in the monolayer limit. In this work we report the mechanical exfoliation of ZrX2 (X = S, Se) from bulk down to the monolayer and we study the dimensionality dependence of the Raman spectra in ambient conditions. We observe Raman signal from bul…

Different temperature renormalizations for heavy and light-hole states of monolayer-thick heterostructures

2000

Abstract We have found that the energy splitting between peaks in the linearly polarized emission from the cleaved surface of an InAs/GaAs monolayer structure triples with increasing temperature in the range from 5 to 150 K. For each polarization the main emission line corresponds to the radiative recombination of either heavy or light-hole excitons bound to the monolayer. The striking temperature behavior of the peak energies originates from the different hole–phonon coupling due to the much larger penetration of the light-hole envelope function into the GaAs. We prove this assertion by confining the light holes to the InAs plane with a strong magnetic field, which leads to a reduction of …

Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures.

2017

InAs nanowires grown by vapor–liquid–solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ~20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor–solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homost…

Tight-binding calculation of spin splittings in semiconductor superlattices

1995

Near band edge and defect emissions in wurtzite Cd0.025Mg0.10Zn0.875O nanocrystals

2021

Abstract We report on near band edge and local defects emissions in Cd0·025Mg0·10Zn0·875O (CdMgZnO) nanoparticles (NPs) as a function of temperature, where a strong temperature-dependent near-infrared emission around 1.7 eV (~730 nm) has been observed. The NPs were synthesized by a modified sol-gel method and were annealed at 750 °C after growing. The crystallographic parameters have been determined by 2-dimensional synchrotron x-ray diffraction (XRD) and conventional XRD analysis, confirming their growth within the wurtzite phase with a preferred orientation along the (101) plane and an apparent crystallite size of 52.72 ± 0.18 nm. This apparent crystallite size is consistent with the near…

Manufacturing Te/PEDOT Films for Thermoelectric Applications

2017

In this work, flexible Te films have been synthesized by electrochemical deposition using PEDOT [poly(3,4-ethylenedioxythiophene)] nanofilms as working electrodes. The Te electrodeposition time was varied to find the best thermoelectric properties of the Te/PEDOT double layers. To show the high quality of the Te films grown on PEDOT, the samples were analyzed by Raman spectroscopy, showing the three Raman active modes of Te: E1, A1, and E2. The X-ray diffraction spectra also confirmed the presence of crystalline Te on top of the PEDOT films. The morphology of the Te/PEDOT films was studied using scanning electron microscopy, showing a homogeneous distribution of Te along the film. Also an a…

Changes in the thermoelectric response of vitreous carbon due to the irradiation by γ-rays

2014

In order to study variations in the thermoelectric properties, some commercial glassy carbon samples were subjected to a sequence of steps consisting of a combination of irradiation with γ-rays produced by radioisotopes 60Co, and hydrogen adsorption when the samples were put in an over pressured atmosphere of this gas. With this procedure it was possible to observe that the irradiation decreases the electrical conductivity of glassy carbon samples and the hydrogenation changes the sign of Seebeck coefficient. The material initially is an n-type semiconductor, but with hydrogenation changes to p-type semiconductor. X-ray diffraction analysis showed that the hydrogenated vitreous carbon is mo…

Optical and Vibrational Properties of Self-assembled GaN Quantum Dots

2008

Publisher Summary This chapter describes quantum dots (QDs) based on group III nitrides (III-N). They are expected to be the active medium of new optoelectronic devices operating at high powers and high temperatures. Besides the well-known advantages of their bulk and quantum well (QW) counterparts, III-N QDs provide strong confinement of carriers in nearly perfect zero-dimensional boxes. Quantum effects provide new degrees of freedom for the design of advanced devices. The chapter reviews the systems of dots that appear spontaneously during epitaxial growth without the need of artificial post-processing and designate them as self-assembled or self-organized QDs regardless of the mechanism …

High-Pressure Raman Study of Zincblende, Cinnabar, and Cmcm Phases Of ZnTe

2002

Raman measurements of ZnTe have been performed at pressures up to 15 GPa. Frequencies, line widths, and intensities of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) were studied in detail. In this note, we focus on the Raman spectra of the high-pressure cinnabar and Cmcm phases. In the transition regime from cinnabar to Cmcm (12.2 to 13.7 GPa) the Raman data indicate the possible existence of a new intermediate high-pressure phase.

Resonant Raman characterization of InAlGaN/GaN heterostructures

2006

InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer.…

Effect of pressure on structural properties and energy band gaps of γ-InSe

2003

We have investigated theoretically the effect of hydrostatic pressure on interatomic bond lengths and energy band gaps of γ-InSe. Total energy calculations were performed using the linear augmented plane wave (LAPW) method, taking into account scalar relativistic corrections as well as spin-orbit coupling. Internal structural parameters were optimized for different pressures by adopting as input the unit cell parameters known from experiment. Our theoretical results for the nearest-neighbor In-Se bond length are in excellent agreement with a recent experimental determination from high-pressure EXAFS measurements. The covalent In-In bond is found to be more compressible than the partially io…

Acoustically driven photon antibunching in nanowires.

2011

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless …

Optical phonon modes of wurtzite InP

2013

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

La 1−xCaxMnO3 semiconducting nanostructures: morphology and thermoelectric properties

2014

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1−xCa x MnO3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has b…

Effect ofA-site andB-site substitution on the infrared reflectivity spectra ofLa1−yAyMn1−xBxO3(A=Ba,Sr;B=Cu,Zn,Sc;0&lt;y&lt;~0.3;0&lt;~x&lt;~0.1)mang…

2003

We have measured the infrared reflectivity spectra of ${\mathrm{La}}_{1\ensuremath{-}y}[\mathrm{Sr}(\mathrm{Ba}){]}_{y}{\mathrm{Mn}}_{1\ensuremath{-}x}[\mathrm{Cu}(\mathrm{Zn},\mathrm{Sc}){]}_{x}{\mathrm{O}}_{3}$ $(0lyl~0.3,0l~xl~0.10)$ manganites, in a wide frequency $(100\char21{}4000{\mathrm{cm}}^{\ensuremath{-}1})$ and temperature (80 K\char21{}300 K) range. The reflectivity spectra were analyzed by a fitting procedure based on a model that includes Drude, midinfrared electronic, and phonon oscillator contributions to the dielectric constant. Six infrared active ${(3A}_{u}$ and ${3E}_{u})$ modes of rhombohedral symmetry are clearly observed. We assigned all observed modes according to e…

Non-resonant Raman spectroscopy of individual ZnO nanowires via Au nanorod surface plasmons

2016

We present a non-resonant Raman spectroscopy study of individual ZnO nanowires mediated by Au nanorod surface plasmons. In this approach, selective excitation of the plasmonic oscillations with radiation energy below the semiconductor bandgap was used to probe surface optical modes of individual ZnO nanowires without simultaneous excitation of bulk phonons modes or band-edge photoluminescence. The development of a reproducible method for decoration of nanowires with colloidal Au nanorods allowed performing an extensive statistical analysis addressing the variability and reproducibility of the Raman features found in the hybrid nanostructures. An estimated field enhancement factor of 103 was…

Pressure dependence of the exciton absorption and the electronic subband structure of aGa0.47In0.53As/Al0.48In0.52As multiple-quantum-well system

1992

We have measured the optical absorption of a ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As multiple quantum well at 10 K for pressures up to 7 GPa. The energies of optical transitions between heavy- and light-hole subbands and electron levels of the wells show a blueshift with pressure similar to the bulk lowest direct band gap. We observe a decrease with pressure of the energy splitting between heavy- and light-hole subbands with the same quantum number n. From the analysis of the absorption line shape, we have obtained the pressure dependences of exciton binding energies, oscillator strengths, and linewidths. These results are interpreted in…

X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

2006

We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga 1-x Mn x N (0.06 <x<0.14) thin epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The measurements were performed in fluorescence mode around the Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after …

Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments

2000

6 páginas, 3 figuras.

Lattice dynamics of superconducting zirconium and hafnium nitride halides

2003

We have performed a study of the Raman active modes of β-HfNCl, β-ZrNCl, and β-ZrNBr and Na-doped β-HfNCl in various scattering configurations. The experimental values are compared with a lattice dynamical calculation andassigned to definite atomic motions. The variation of the atomic force constants are analyzed as a function of the bond length, relating their relative strength with the atomic characteristics of the compound.

Effects of Gamma Irradiation on the Kinetics of the Adsorption and Desorption of Hydrogen in Carbon Microfibres

2013

In this study, three types of carbon fibres were used, they were ex-polyacrylonitrile carbon fibres with high bulk modulus, ex-polyacrylonitrile fibres with high strength, and vapour grown carbon fibres. All the samples were subjected to a hydrogen adsorption process at room temperature in an over-pressured atmosphere of 25 bars. The adsorption process was monitored through electrical resistivity measurements. As conditioning of the fibres, a chemical activation by acid etching followed by ¿-ray irradiation with 60Co radioisotopes was performed. The surface energy was deter-mined by means of the sessile drop test. Both conditioning treatments are supplementary; the chemical activation works…

Vibrational modes and strain in GaN/AlN quantum dot stacks: dependence on spacer thickness

2007

We have investigated the influence of spacer thickness on the vibrational and strain characteristics of GaN/AlN quantum dot multilayers (QD). The Raman shift corresponding to the E2h vibrational mode related to the QDs has been analyzed for AlN thicknesses ranging from 4.4 nm to 13 nm, while the amount of GaN deposited in each layer remained constant from sample to sample. It is shown that there is a rapid blue shift of the GaN vibrational mode with spacer thickness when its value is smaller than 7 nm while it remains almost constant for thicker spacers. A rapid increase of the Raman line-width in the thicker samples is also observed. The experimental behavior is discussed in comparison wit…

Confident methods for the evaluation of the hydrogen content in nanoporous carbon microfibers

2012

Abstract Nanoporous carbon microfibers were grown by chemical vapor deposition in the vapor-liquid solid mode using different fluid hydrocarbons as precursors in different proportions. The as-grown samples were further treated in argon and hydrogen atmospheres at different pressure conditions and annealed at several temperatures in order to deduce the best conditions for the incorporation and re-incorporation of hydrogen into the microfibers through the nanopores. Since there are some discrepancies in the results on the hydrogen content obtained under vacuum conditions, in this work, we have measured the hydrogen content in the microfibers using several analytical methods in ambient conditi…

Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor

2003

Abstract The defect and morphology of GaN monocrystals with Mn content 10 19  cm −3 were examined by fluorescence confocal microscopy and spectroscopy. The fluorescence spectral investigation was carried out in a region very close to the defect centers. Contrary to earlier results, we did observe a characteristic fluorescence line of Mn corresponding to the 4 T 1 → 6 A 1 and 4 T 2 → 6 A 1 transitions, suggesting the predominant presence of Mn 2+ (d 5 ). In addition, strong emission lines were observed at 1.60 and at 1.85 eV when the sample was excited with light of 436 and 365 nm, respectively. An energy scheme is proposed to explain the observed data coherently.

Electronic structure of a quantum ring in a lateral electric field

2001

The electronic states of novel semiconductor quantum rings (QR's) under applied lateral electric fields are theoretically investigated for different values of the ratio ${r}_{2}{/r}_{1},$ where ${r}_{2}$ ${(r}_{1})$ is the outer (inner) radius of the ring. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio ${r}_{2}{/r}_{1}.$ An anomalous behavior in the energy vs. electric-field fan plot due to the break of symmetry is predicted. Analytical expressions for the energy level…

Raman spectra of (PbS)1.18(TiS2)2 misfit compound

2007

Abstract A Raman study on the (PbS)1.18(TiS2)2 semiconductor structure with incommensurate layers (misfit) is reported. The different bands observed in the spectra are attributed to both the TiS2 host layers, at 219 (Eg) and 333 (A1g) cm−1, and the intercalated PbS layers: the LO(Γ), 2LO and 3LO phonons at 203, 412 and 634 cm−1, respectively. A phonon peak probably related to the superposition of TiS2 and PbS vibrations, was observed near 286 cm−1. The decrease of the phonon wave numbers (of the modes located at 203, 333, 412, and 634 cm−1) with increasing laser power pointed out negative temperature coefficients of these modes. A peak appearing with laser power near 151 cm−1 is discussed. …

Polarization-dependent excitons and plasmon activity in nodal-line semimetal ZrSiS

2022

The optical properties of bulk ZrSiS nodal-line semimetal are theoretically studied within a many-body formalism. The G0W0 bands are similar to those calculated within the density functional theory, except near the {\Gamma} point; in particular, no significant differences are found around the Fermi energy. On the other hand, the solution of the Bethe-Salpeter equation reveals a significant excitonic activity, mostly as dark excitons which appear in a wide energy range. Bright excitons, on the contrary, are less numerous, but their location and intensity depend greatly on the polarization of the incident electric field, as the absorption coefficient itself does. The binding energy of these e…

CCDC 1486674: Experimental Crystal Structure Determination

2016

Related Article: Alexandre Abhervé, María José Recio-Carretero, Maurici López-Jordà, Juan Modesto Clemente-Juan, Josep Canet-Ferrer, Andrés Cantarero, Miguel Clemente-León, and Eugenio Coronado|2016|Inorg.Chem.|55|9361|doi:10.1021/acs.inorgchem.6b01508

CCDC 1486675: Experimental Crystal Structure Determination

2016

Related Article: Alexandre Abhervé, María José Recio-Carretero, Maurici López-Jordà, Juan Modesto Clemente-Juan, Josep Canet-Ferrer, Andrés Cantarero, Miguel Clemente-León, and Eugenio Coronado|2016|Inorg.Chem.|55|9361|doi:10.1021/acs.inorgchem.6b01508