TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory

We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.

Transition probabilities in negative parity bands of the 119I nucleus

Abstract Lifetimes in four negative-parity bands of 119 I were measured using DSAM and RDM. 119 I nuclei were produced in the 109 Ag( 13 C,3n) reaction, γγ coincidences were collected using the NORDBALL array. RDDSA — a new method of RDM analysis — is described. This method allowed for the self-calibration of stopping power. From 31 measured lifetimes, 39 values of B (E2) were established. Calculations in the frame of the Core Quasi Particle Coupling (CQPC) model were focused on the problem of susceptibility of the nucleus to γ -deformation. It was established that nonaxial quadrupole deformation of 119 I plays on important role. The Wilets–Jean model of a γ -soft nucleus describes the 119 …

Stopping powers of havar and effective charge for 1.4–3.2 MeV/u 127I-ions

Abstract Stopping powers of havar for 1.4–3.2 MeV/u 127 I-ions have been determined by the transmission technique using two geometrical arrangements. No previous data have been published for havar with this ion. The experimental data are compared with predictions obtained by using Bragg’s additivity rule with various parametrizations of the stopping power found in the literature. The values obtained by the parametrizations underestimate the experimental data by 5–11%. The empirical correction scheme of Thwaites yields values in rather good agreement with the present results, especially at energies above 1.9 MeV/u. The effective charges of the 127 I ions were also deduced from the experiment…

Dynamic Test Methods for COTS SRAMs

International audience; In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmos…

Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.

The role of the shape driving neutron orbital in 108Cd

Abstract The nucleus 108Cd has been studied using a heavy-ion reaction and the NORDBALL multi-detector array. The yrast band has been extended to Ip = 24+, and nine quasi-rotational side bands have been identified. The n h 11 2 negative-parity orbital is found to play a dominant role both in the low-spin as well as in the high-spin structure of 108Cd. The first band crossing in the yrast band is caused by the h 11 2 neutrons. The 10+ state of the aligned n( h 11 2 ) 2 configuration decays strongly into a low-lying low-spin intruder-like positive-parity band. It is suggested that this intruder structure is dominated by a non-aligned n( h 11 2 ) 2 configuration. For the first time in this mas…

Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs

In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…

Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.

Mechanisms of Electron-Induced Single-Event Latchup

In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.

The distribution of the rotational transition strength in warm nuclei studied through γ-ray correlations

Abstract The study of damping of rotational motion applying te rotational plane mapping (RPM) method is presented and discussed. The aim of this technique is to extract the distribution of the rotational transition strength from an analysis of the shape of the “central valley” of two- and three-dimensional γ-ray spectra. The method is applied to a triple γ-coincidence data set of 162,163Tm nuclei formed in 37Cl+130Te reactions. The rotational transition strength is obtained as a function of rotational frequency for selected regions of entry states, and the width is found to be rather constant and approximately equal to 80 keV. This value is significantly smaller than the value predicted the…

Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs

In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…

In-beam γ-ray spectroscopy of 56Co

Excited states of Co-56 were studied in the reaction Al-27(S-32,2p1n) Co-56. The NORDBALL array with a Neutron Wall and a Silicon Ball was employed. The excited states were interpreted in terms of ...

High-j bands in 173Ir

Abstract High-spin states in rotational bands associated with the 11 2 − [505] , 1 2 − [541] and 1 2 + [660] Nilsson orbits have been observed in the previously unknown 173Ir nucleus using the 144Sm(32S,p2n) reaction at 163 MeV. The B(M1; I → I − 1)/B(E2; I → I −2) ratios have been extracted for the 11 2 − [505] band and compared with predictions of the semiempirical model by Donau and Frauendorf. The quasineutron band crossing frequencies and alignment gains are discussed in terms of the CSM model. Calculations for equilibrium deformations suggest different deformations for the three bands observed.

Lifetimes in the ground-state band and the structure of 118Te

Lifetimes of excited states in 118Te have been measured using the Doppler Shift Attenuation (DSA) and Recoil Distance (RD) methods in the 109Ag(13C, p3n) reaction at a beam energy of 54 MeV. Lifetime values of the ground-state band levels with spins I π = 2+-16+ have been obtained. The excitation energies and B(E2) values are interpreted in the framework of a version of IBFM ( IBM + 2qp) with the maximum boson number exceeding its standard value. A satisfactory agreement with experimental level scheme and B(E2) values for the ground-state band is achieved.

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Accuracy of 210Pb dating in two annually laminated lake sediments with high Cs background

Abstract A low-background gamma ray spectroscopy system has been used for nondestructive determination of 210Pb, 226Ra, 134Cs and 137Cs in lake sediment samples. Two Finnish sediment cores with high 137Cs activity originating from the Chernobyl accident have been analysed and dated using 210Pb. The accuracy of the 210Pb dating method was checked by varve counting of replicate samples. In one lake the 210Pb method gave similar dating results as varves, but in the other lake significant differences were detected. It was found that a high Cs concentration significantly impairs the accuracy of the 210Pb activity measurement. However, tha reliability of the dating result depends mostly on the co…

From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

The reference SEU Monitor system designed and presented in 2005 (R. H. SOslashrensen, F.-X. Guerre, and A. Roseng ldquoDesign, testing and calibration of a reference SEU monitor system,rdquo in Proc. RADECS, 2005, pp. B3-1-B3-7) has now been used by many researchers at many radiation test sites and has provided valuable calibration data in support of numerous projects. As some of these findings and results give new insight into improved inter-facility calibrations and provide additional inputs into ongoing SEE research, a few of the more interesting cases are presented. Furthermore the dasiadetector elementpsila, the Atmel AT60142F SRAM, now in a hybrid configuration, will form the key dete…

Semi-Empirical Model for SEGR Prediction

The underlying physical mechanisms in single event gate rupture (SEGR) are not known precisely. SEGR is expected to occur when the energy deposition due to a heavy ion strike exceeds a certain threshold simultaneously with sufficient electric field across the gate dielectric. Typically the energy deposition is described by using the linear energy transfer (LET) of the given ion. Previously the LET has been demonstrated not to describe the SEGR sufficiently. The work presented here introduces a semi-empirical model for the SEGR prediction based on statistical variations in the energy deposition which are described theoretically.

Heavy ion and proton test site at JYFL-accelerator laboratory

Abstract A radiation effects facility (RADEF) has been installed in the Accelerator Laboratory of the Department of Physics, University of Jyvaskyla (JYFL). The facility includes a special beam line dedicated to irradiation studies of semiconductor components and devices. It consists of a vacuum chamber including component movement apparatus and the necessary diagnostic equipment required for beam quality and intensity analysis. Construction of the station began in the summer of 1996, and in August 1997 the suitability of the station for space applications was evaluated. In this paper we introduce the accelerator laboratory along with the test station and its properties. We also describe th…

Retention of Pb isotopes in glass surfaces for retrospective assessment of radon exposure

Abstract In recent years there has been increasing interest in radio-epidemiological techniques to retrospectively measure the radon dose exposure by determining the activity of 210Pb, the longest-lived 222Rn progeny, in glass surface layers. In this study the diffusion of 39 keV 209Pb+ ions implanted into glass using the IGISOL facility has been studied under conditions that mimic the recoil implantation of 210Pb from 222Rn. The resulting depth distributions of 209Pb were then measured after heat treatment in vacuum at different temperatures by a sputter erosion technique. The diffusion coefficient could be described by an Arrhenius equation D = D0exp(−H/kT) where D 0 = 0.30 - 0.24 + 1.14 …

Radiation Shielding Study of Advanced Data and Power Management Systems (ADPMS) Housing Using Geant4

The tendency to reduce the spacecraft mass covers nowadays all components of the spacecraft. One potential target is to reduce the mass of electronics and its housings. The use of composite materials, especially CFRP is a well known and vastly used approach to mass reduction. In cost reduction the use of standard (non-space qualified) electronics has increased. These commercial circuits and other components cannot tolerate as high radiation levels as space qualified components. Therefore the use of standard electronics components poses challenge in terms of the radiation protection capability of the ADPMS housings. The main goal of this study is to give an insight on the radiation shielding…

Particle detectors made of high-resistivity Czochralski silicon

We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more…

Interaction strength and shape difference for the h9/2 and h11/2 configurations in163Tm

The strongly shape driving πh9/2[541]l/2− configuration with α=+1/2 exhibits some anomalous, and so far unexplained, features concerning the crossing frequency, ħωc, the aligned angular momentum, ix, and interaction strength, at the alignment of the first pair of i13/2 quasineutrons in several odd-Z rare earth-nuclei. The h9/2[541]1/2− and h11/2[523]7/2− bands have been studied in the stably deformed rare-earth nucleus163Tm to investigate these features. A difference in band crossing frequency of ∼ 80 keV between the two bands is found. Rotational bands built on these two configurations have been found to cross in the spin range I=25/2–29/2 ħ. Theγ-decay pattern between the two bands is est…

Critical temperature modification of low dimensional superconductors by spin doping

Ion implantation of Fe and Mn into Al thin films was used for effective modification of Al superconductive properties. Critical temperature of the transition to superconducting state was found to decrease gradually with implanted Fe concentration. it was found that suppression by Mn implantation much stronger compared to Fe. At low concentrations of implanted ions, suppression of the critical temperature can be described with reasonable accuracy by existing models, while at concentrations above 0.1 at.% a pronounced discrepancy between the models and experiments is observed.

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.

High-Energy Electron-Induced SEUs and Jovian Environment Impact

We present experimental evidence of electron-induced upsets in a reference European Space Agency (ESA) single event upset (SEU) monitor, induced by a 200-MeV electron beam at the Very energetic Electronic facility for Space Planetary Exploration in harsh Radiation environments facility at CERN. Comparison of experimental cross sections and simulated cross sections is shown and the differences are analyzed. Possible secondary contributions to the upset rate by neutrons, flash effects, and cumulative dose effects are discussed, showing that electronuclear reactions are the expected SEU mechanism. The ESA Jupiter Icy Moons Explorer mission, to be launched in 2022, presents a challenging radiat…

Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.

Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species

Experimental linear energy transfer values of heavy ions in silicon are presented with comparison to estimations from different semi empirical codes widely used among the community. This paper completes the experimental LET data for the RADEF cocktail ions in silicon.

Competing proton and neutron alignments in neutron-deficient Xe-nuclei

Abstract High-spin structures of the neutron-deficient 117,118,120 Xe isotopes have been studied by in-beam γ-ray spectroscopic techniques. The final nuclei have been identified by means of charged-particle detectors. Collective rotational bands based on the neutron d 5 2 , g 7 2 and h 11 2 configurations have been identified in 117 Xe. In the even 118 Xe and 120 Xe nuclei several new side bands were observed and the previously known bands were extended. The present level schemes include two positive-parity bands constructed to high spin in 118 Xe, whereas in 120 Xe three such bands were observed. In order to explain these bands, both proton and neutron ( h 11 2 ) 2 alignments, as well as t…

SEGR in SiO<inf>2</inf>-Si<inf>3</inf>N<inf>4</inf> stacks

Effects of high-energy electrons in advanced NAND flash memories

We study the effects of high-energy electrons on advanced NAND Flash memories with multi-level and single-level cell architecture. We analyze the error rate in floating gate cells as a function of electron energy, evaluate the impact of total ionizing dose, and discuss the physical origin of the observed behavior.

Particle Detectors made of High Resistivity Czochralski Grown Silicon

We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.

Neutron-induced soft errors in advanced Flash memories

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed

The mass-hierarchy and CP-violation discovery reach of the LBNO long-baseline neutrino experiment.

The next generation neutrino observatory proposed by the LBNO collaboration will address fundamental questions in particle and astroparticle physics. The experiment consists of a far detector, in its first stage a 20 kt LAr double phase TPC and a magnetised iron calorimeter, situated at 2300 km from CERN and a near detector based on a high-pressure argon gas TPC. The long baseline provides a unique opportunity to study neutrino flavour oscillations over their 1st and 2nd oscillation maxima exploring the $L/E$ behaviour, and distinguishing effects arising from $\delta_{CP}$ and matter. In this paper we have reevaluated the physics potential of this setup for determining the mass hierarchy (M…

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

High-spin states in110Cd

Levels of110Cd have been investigated via the96Zr(18O,4n)110Cd reaction by employing the NORD-BALL array of 17 Compton- suppressed Ge detectors. The yrast band has been observed up to I=28 ħ and 14.2 MeV excitation energy with band crossing at ħωc=0.35 MeV. At least three side bands have been constructed. The negative parity bands experience band crossings at ħωc ≈ 0.45 MeV.

High-spin studies of the neutron deficient nuclei 103In, 105In, 107In, and 109In

High-spin states of the isotopes In-103,In-105,In-107,In-109 have been investigated using in-beam gamma-ray spectroscopic methods. Results from three different experiments are presented. Targets of Fe-54, Cr-50, and Mo-92 were bombarded by a 270 and 261 MeV Ni-58 beam and by a 95 MeV F-19 beam, respectively. Reaction channel separation was achieved with a charged-particle detector array and in the first two experiments also with a 1 pi neutron detector system. As a result of these experiments the level schemes of In-103,In-105,In-107,In-109 were significantly extended. Excited states of these odd-A indium isotopes are discussed within the framework of the nuclear shell model and the hole-co…

Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.

In-beam study of 102In, 104In and 106In

Proton-rich odd-odd In isotopes have been investigated by in-beam spectroscopic methods using the NORDBALL detector array. A Ni-58 beam with an energy of 270 MeV was used to bombard a Fe-54 target. ...

Lifetimes of yrast states in 110Cd

Abstract Lifetimes or lifetime limits of 20 yrast levels in 110 Cd have been measured using the recoil-distance method and the NORDBALL array of Compton-suppressed Ge detectors. From the reduced transition probabilities competing rotational and vibrational behaviour of 110 Cd is revealed. Also non-collective states, associated with proton configurations, have been observed.

Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed

Excited states of111I and the observation of a 21 ns isomer

Proton rich nuclei close to 100 Sn have been investigated inbeam using the NORDBALL detector array. A beam of 270 MeV58 Ni was used to bombard a 54 Fe target. Reaction channel separation was achieved with a 4π charged particle multi-detector set-up together with a 1π neutron detector wall placed in the forward direction. Gamma-ray transitions belonging to the 111 I nucleus were identified for the first time. A level scheme constructed from γ-γ-particle-coincidence analysis is proposed. The level structure is discussed within the framework of the shell model and the systematics of the heavier odd iodine nuclei.

Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon

Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.

In-beam?-ray spectroscopy of102In

Neutron deficient nuclei close to100Snhave been investigated in-beam by γ-ray spectroscopic methods using the NORDBALL detector array. A beam of 270 MeV58Niwas used to bombard a target of54Fe.Reaction channel separation was achieved with a 4π charged particle multidetector setup together with a 1π neutron detector wall placed in the forward direction. Excited states of102Inwere identified for the first time. The level scheme constructed from γ-γ-particle-coincidence and γ-γ-angular correlation analysis is presented. The structure of102In is discussed and compared to neighboring nuclei in the framework of the nuclear shell-model.

Coexisting structures in 119I

Abstract High-spin structures of 119 I have been studied by using 13 C and 15 N induced reactions. In all, fifteen ΔI = 1 or 2 bands belonging to 119 I were found. No evidence was found for bands with collective oblate shape, instead, all the observed rotational bands were interpreted to possess a collective prolate shape. A rich tapestry of noncollective states of both negative and positive parity was observed. Based on TRS calculations various configurations at β 2 ≈ 0.17 and γ = 60° were assigned to these states.

Level Scheme of 102In first observed

Neutron deficient nuclei close to 100Sn have been investigated in-beam by particle and γ -ray spectroscopic methods using the NORDBALL detector array following the bombartment of a 54Fe target with a beam of 270 MeV 58Ni. Protons and α particles were identified with a 4 π ΔE -type Si-multidetector and neutrons with a 1π liquid-scintillator-detectorassembly placed in the forward derection. Excited states of 102 In were identified for the first time. The level scheme constructed from γ - γ -particle-coincidence and γ angular correlations is discussed and compared to the structure of neighboring nuclei in the framework of the nuclear shell model.

Heavy ion SEE studies on 4-Gbit NAND-Flash memories

Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.

High spin band structures in104Cd

High spin states in Cd-104 have been investigated by means of heavy ion induced reactions using the Nordball detector array. The level scheme constructed from yy-coincidences is dominated by three ...

SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

Abstract. This work presents experimental Single Event Gate Rupture (SEGR) data for Metal–Insulator–Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2–Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR cross- section and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitative connection between the energy deposition in the dielectric and the SEGR is proposed. peerReviewed

In-beam spectroscopy of 110Te

The neutron-deficient nucleus Te-110 has been investigated by in-beam spectroscopic methods using the NORDBALL multi-detector array. Except for the energy of one level observed in alpha-decay, exci ...

In-beam spectroscopy at the proton-drip line. First observation of excited states in 106Sb and 107Sb

Neutron deficient nuclei close to Sn-100 have been investigated in-beam using the NORDBALL detector array. A target of Fe-54 was bombarded with a beam of Ni-58 at 270 MeV. Evaporation residues were identified by detecting protons and alpha particles in a 4 pi charged particle multi-detector set-up and neutrons in a 1 pi neutron detector wall in coincidence with gamma rays. Excited states of the proton drip line nucleus Sb-106 and of Sb-107 were identified for the first time. The yrast level schemes constructed from gamma-gamma-particle coincidence and gamma-gamma angular correlation analysis are presented and discussed within the framework of the nuclear shell model.

Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft

Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…

Application and development of ion-source technology for radiation-effects testing of electronics

Abstract Studies of heavy-ion induced single event effect (SEE) on space electronics are necessary to verify the operation of the components in the harsh radiation environment. These studies are conducted by using high-energy heavy-ion beams to simulate the radiation effects in space. The ion beams are accelerated as so-called ion cocktails, containing several ion beam species with similar mass-to-charge ratio, covering a wide range of linear energy transfer (LET) values also present in space. The use of cocktails enables fast switching between beam species during testing. Production of these high-energy ion cocktails poses challenging requirements to the ion sources because in most laborat…

Coexistence of collective and quasiparticle structures in 106Sn and 108Sn

New levels in the neutron deficient nuclei 106Sn and 108Sn have been investigated by using the NORDBALL detector array combined with charged particle and neutron detectors. The excited structures are discussed in terms of collectivity and the shell model. The excitations are interpreted to be based on d52, g72 and h112 both for protons and neutrons and g92 for protons. The systematical behaviour of the specific states in the Sn isotopes is studied in the mass range of A = 106–118.

A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing

A methodology is proposed for the statistical analysis of memory radiation test data, with the aim of identifying trends in the single-even upset (SEU) distribution. The treated case study is a 65nm SRAM irradiated with neutrons, protons and heavy-ions.

Slowing down of 1.3–3.5 MeV/u Fe, Kr and I ions in ten metals

Abstract Stopping powers for 1.3–3.5 MeV/u 56 Fe, 80, 84 Kr and 127 I ions in Mg, V, Fe, Co, Ni, Cu, Nb, Sn, Ta and Au have been determined by a transmission technique exposing the metallic sample foils to the direct ion beam. No previous data have been published for Mg, V, Fe, Co, Nb, Sn or Ta stopping media with these ion energies. The experimental results are compared with parametrizations of the stopping powers found in the literature (SRIM-2000 and Hubert’s parametrization). Discrepancies as high as 21 and 16% are observed for SRIM and Hubert’s parametrization, respectively. However, there is agreement between the present results and other experimental data available at corresponding i…

Stopping powers of havar for 1.6, 2.3 and 3.2 MeV/u heavy ions

Abstract Stopping powers of havar for 28,30 Si-, 36 Ar-, 54,56 Fe- and 80,84 Kr-ions with energies of 1.6, 2.3 and 3.2 MeV/u have been determined by a transmission technique. Sample foils are exposed to the direct beams. No previous data for havar with these ions have been published. The obtained results are brought together with literature havar data for 1 H-, 4 He-, 7 Li-, 11 B-, 12 C-, 14 N-, 16 O- and 127 I-ions at the same ion velocity. The experimental data are compared with the values predicted by the SRIM-2000 parametrization using Bragg’s rule. A systematic underestimation, by 6–23%, of the experimental stopping powers was observed. The empirical correction scheme of Thwaites has b…

Simultaneous wide-range stopping power determination for several ions

A new procedure to extract simultaneously continuous stopping power curves for several ions and several absorbers over a wide energy range and with statistical errors reduced to negligible level is presented. The method combines our novel time-of-flight based method with the capability of our K130 cyclotron and ECR ion-source to produce the so-called ion cocktails. The potential of the method is demonstrated with a 6.0 MeV/u cocktail consisting of 16O4+, 28Si7+ and 40Ar10+ ions. The stopping power in polycarbonate in the energy range of 0.35–5 MeV/u has been determined with absolute uncertainty of less than 2.3% and with relative below 0.2%. The results are compared with literature data and…

Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories

Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology single-level cell 1, 2, 4, 8 Gb commercial NAND flash memory and multi-level cell 8, 16, 32 Gb are reported. The heavy ion measurements were extended down to LET 0.1 MeV-cm2/mg. Scaling effects in SEE and TID response are discussed. Floating gate bit error upset cross section does not scale with feature size at high LETs, except for single-level cell 8 Gb device which is built with 51 nm processes. The threshold LET does not change with scaling. Charge pump TID degradation and standby current improves with scaling. In general, the effect of radiation is either unchanged or is less s…

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

Aalto-1, multi-payload CubeSat: Design, integration and launch

The design, integration, testing, and launch of the first Finnish satellite Aalto-1 is briefly presented in this paper. Aalto-1, a three-unit CubeSat, launched into Sun-synchronous polar orbit at an altitude of approximately 500 km, is operational since June 2017. It carries three experimental payloads: Aalto Spectral Imager (AaSI), Radiation Monitor (RADMON), and Electrostatic Plasma Brake (EPB). AaSI is a hyperspectral imager in visible and near-infrared (NIR) wavelength bands, RADMON is an energetic particle detector and EPB is a de-orbiting technology demonstration payload. The platform was designed to accommodate multiple payloads while ensuring sufficient data, power, radio, mechanica…

Mechanisms of Electron-Induced Single Event Latchup

In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed. peerReviewed

A finite number of regular rotational bands in the superdeformed well of 143Eu

Abstract The number of excited superdeformed bands in 143 Eu is measured by use of the Fluctuation Analysis Method. Between 10 and 40 rotational bands, displaying typical rotational energy correlations over two consecutive transitions, are populated within a rather narrow range in transition energy, E γ ≈ 1300–1500 keV. These numbers are close to the values found for normally deformed nuclei and agree with microscopic cranking + band mixing calculations for the specific superdeformed nucleus, which predict the onset of rotational damping to occur at the excitation energy U 0 = 1.3–1.6 MeV above the yrast line.

Properties of the 13/2+ isomeric decay in201Hg

The isomeric decay of theT1/2=94 us isomeric state in201Hg was studied in beam via the reaction198Pt(α, n). Gamma-ray and conversion-electron spectra were recorded. From the conversion coefficients, the multipolarities of the two depopulating transitions were determined to beM 2 + 10%E 3 andE 2, respectively. These assignments give the depopulating transitions to be 13/2+ → 9/2− and 9/2− → 5/2−, and these thus substantiate the previous suggestion that the isomeric state hasJπ=13/2+. For the 13/2+ → 9/2−M 2 transition a detailed study ofE 3 andM 4 admixed amplitudes was done. The microscopic properties of the 13/2+ and 9/2− states are discussed, and a comparison to the corresponding ones in1…

Heavy-Ion Induced Charge Yield in MOSFETs

The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors irradiated with 10-keV X-rays and several different heavy ions. The obtained charge yield for the heavy ions is in average nearly an order of magnitude lower than for the X-rays for the entire range of measured electric fields.

Memory irradiation measurements for the European SMART-1 spacecraft

Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA's specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced single event upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also…

Collectivity in ‘‘spherical’’Eu143,144nuclei

Long cascades of stretched E2 transitions have been observed in $^{143}\mathrm{Eu}$ and $^{144}\mathrm{Eu}$ nuclei which at low excitation exhibit spherical shape. Lifetime experiments demonstrate high collectivity values up to B(E2)\ensuremath{\approxeq}100 W.u. among these E2 cascades. The total Routhian surface calculations indicate many crossing rotational bands of the nucleus with triaxial shape at ${\mathrm{\ensuremath{\beta}}}_{2}$\ensuremath{\approxeq}0.25 and \ensuremath{\gamma}\ensuremath{\approxeq}30\ifmmode^\circ\else\textdegree\fi{}. The E2 cascades in $^{143}\mathrm{Eu}$ are proposed to represent the \ensuremath{\nu}${\mathit{h}}_{11/2}^{2}$\ensuremath{\pi}${\mathit{h}}_{11/2}…

The first experimental values for the stopping power of 89Y ions in carbon, nickel and gold

Abstract The stopping power values of 89 Y ions in carbon, nickel and gold were measured with accuracy to better than 5% in the energy range from 0.03 to 8.2 MeV/u. The newly developed B-TOF method was used for the measurements. The results are compared with theoretical and semi-empirical predictions. For this ion/absorber combination no prior experimental data are available.

Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions

The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma

Energy loss measurement of protons in liquid water

The proton stopping power of liquid water was, for the first time, measured in the energy range 4.7-15.2 MeV. The proton energies were determined by the time-of-flight transmission technique with the microchannel plate detectors, which were especially developed for timing applications. The results are compared to the literature values (from ICRU Report 49 (1993) and Janni's tabulation (1982 At. Data Nucl. Data Tables 27 147-339)) which are based on Bethe's formula and an agreement is found within the experimental uncertainty of 4.6%. Thus, earlier reported discrepancy between the experimental and literature stopping power values at lower energies was not observed at the energies considered …

Traces of errors due to single ion in floating gate memories

Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track will be degraded.

The RADECS 2008 workshop overview

The 8th European Workshop on Radiation and its Effects on Components and Systems, RADECS 2008, was held September 10–12, 2008 at the University of Jyvaskyla, Finland. The venue took place at the University's Agora Building locating close to the Alba hotel, where most of the attendees were accommodated. The host of the event was the Department of Physics and its Industrial Applications group served as the organizer. The group runs the Radiation Effects Facility, RADEF, in the Department's Accelerator Laboratory.

Upgrades for the RADEF Facility

RADEF includes heavy ion and proton beam lines for irradiation of space electronics. A special beam cocktail for back side irradiations has been developed. Also, experimental LET values of its two heaviest ions have been determined.

Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?

Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed

Irradiation of the head reduces adult hippocampal neurogenesis and impairs spatial memory, but leaves overall health intact in rats.

Treatment of brain cancer, glioma, can cause cognitive impairment as a side‐effect, possibly because it disrupts the integrity of the hippocampus, a structure vital for normal memory. Radiotherapy is commonly used to treat glioma, but the effects of irradiation on the brain are still poorly understood, and other biological effects have not been extensively studied. Here we exposed healthy adult male rats to small and moderate‐dose irradiation of the head. We found no effect of irradiation on systemic inflammation, weight gain or gut microbiota diversity, although it increased the abundance of Bacteroidaceae family, namely Bacteroides genus in the gut microbiota. Irradiation had no effect on…

SEE on Different Layers of Stacked-SRAMs

International audience; This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The …

Evaluation of the relative thermoluminescence efficiency of LiF:Mg,Ti and LiF:Mg,Cu,P TL detectors to low-energy heavy ions

Abstract The most popular types of LiF-based thermoluminescent (TL) detectors, LiF:Mg,Ti (MTS-N) and LiF:Mg,Cu,P (MCP-N), have been investigated, with respect to their dose (fluence) response and relative TL efficiency to different ion species. The detectors were irradiated using the nitrogen, iron, krypton and xenon ion beams, at energies ranging from 5.0 to 9.3 MeV/n. Supra- and sublinear response was found, for the MTS-N and MCP-N, respectively, similarly as observed for γ-rays. However, the level of nonlinearity of response of studied detectors is strongly reduced by increasing values of the ion ionization density (no supralinearity for Xe ions, for MTS-N, within calculated uncertaintie…

Influence of beam conditions and energy for SEE testing

GANIL/Applications industrielles; The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles: SRAMs and power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results. Testing to high fluence levels is required to detect rare events. This increases the probability of nuclear interactions. This is typically the case for power MOSFETs, which are tested at high fluences for single event burnout or gate rupture detection, and for single-event-upset (SEU) measurement in SRAMs below the direct ionization threshold. Differences between various test conditions (…

Coexistence of collective and quasiparticle structures in 106, 108Sn nuclei

New revels in two neutron deficient nuclei Sn-106.108 have been found by using the Nordball detector array extended with the arrangements of charged particle and neutron detectors. The excited stru ...

The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method

The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.

Effect of Ion Energy on Charge Loss From Floating Gate Memories

Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed.

Shape coexistence in 117I

The 117I nucleus has been investigated in a high-spin gamma-spectroscopic study using the NORDBALL detector array. The observed level structures are interpreted as resulting from coexisting collect ...

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. peerReviewed

Determination of electronic stopping powers of 0.05–1MeV/u 131Xe ions in C-, Ni- and Au-absorbers with calorimetric low temperature detectors

Abstract A new experimental system for precise determination of electronic stopping powers of heavy ions has been set up at the accelerator laboratory of the University of Jyvaskyla. The new setup, combining an established B-ToF system and an array of calorimetric low temperature detectors (CLTDs), has been used for the determination of electronic stopping powers of 0.05–1 MeV/u 131Xe ions in carbon, nickel and gold. Thereby advantage of the improved linearity and energy resolution of CLTDs as compared to the previously used ionization detector was taken to reduce energy calibration errors and to increase sensitivity for the energy loss determination, in particular at very low energies. The…

Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs

International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.

Si self-diffusion in cubic B20-structured FeSi

Self-diffusion of implanted 31Si in the e-phase FeSi (cubic B20-structure) has been determined in the temperature range 660–810 °C using the modified radiotracer technique. With an activation enthalpy of 2.30 eV and a pre-exponential factor of 15×10−8 m2 s−1 the silicon diffusivity was found to be slightly slower than Ge impurity diffusion in FeSi. This difference is proposed to originate from attractive elastic interactions prevailing between the slightly oversized Ge atoms and the Si sublattice vacancies. The results confirm the argument that 71Ge radioisotopes may be used to substitute the short-lived 31Si radiotracers when estimating self-diffusion in silicides.

Radiation Tolerance Tests of Small-Sized CsI(Tl) Scintillators Coupled to Photodiodes

Radiation tolerance of small-sized CsI (Tl) crystals coupled to silicon photodiodes was studied by using protons. Irradiations up to the fluence of 1012 protons/cm2 were used. Degradation of light output by less than 5% was achieved.

Utilisation of a sputtering device for targetry and diffusion studies

A novel device for versatile sputtering applications is described. The apparatus design is realised for fulfilling the demands of both nuclear physics experiment target production and serial sectioning in solid-state diffusion studies with radiotracers. Results of several tests are reported, characterising the devise performance in these two differing applications.

Low Energy Protons at RADEF - Application to Advanced eSRAMs

A low energy proton facility has been developed at RADEF, Jyvskyl, Finland. The proton energy selection, calibration and dosimetry are described. The first experiment with external users was performed using two memory test vehicles fabricated with 28 nm technology. Examples of single event upset measurements in the test vehicles embedded SRAMs (eSRAMs) as a function of proton energy are provided.

Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons

Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.

Methodologies for the Statistical Analysis of Memory Response to Radiation

International audience; Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study.

High-spin studies near 100Sn with NORDBALL: New results on 102In, 104In and 108Sb

The NORDBALL detector array has been used in a gamma-ray spectroscopic study of neutron deficient nuclei close to 100Sn. A beam of 270 MeV 58Ni ions was used to bombard a target of Fe-54. Reaction channel separation was achieved with a 4pi charged particle Si-ball together with a 1pi neutron detector wall. Altogether 29 final nuclei were identified and excited states were observed for the first time in 8 of them. The weakest identified channel was 100Cd which represented 4.10(-3) % of the observed total yield. Level schemes Of 102In, 104In and 108Sb constructed from gamma-gamma-particle-coincidence and gamma-gamma-angular correlation analyses are presented. The observed structures are discu…

Identification and spectroscopy of the108Te nucleus

Excited states of 108 Te were populated in the 54 Fe + 58 Ni (270 MeV) reaction using the NORDBALL detector array equipped with charged-particle and neutron detector systems for reaction channel separation. Gamma rays belonging to the neutron deficient nucleus 108 Te were identified for the first time. On the basis of γγ-coincidence and angular correlation relations a level scheme was constructed with tentative spin and parity assignments. The structure of the nucleus is discussed in the framework of systematics of heavier Te nuclei.

First observation of excited states in 108Sb

A spectroscopic study of Sb-108 has been carried out as a part of a larger experiment where in total twenty-nine different residual nuclei were identified. This study gives the first information on excited levels in this nucleus. A low-lying two-quasi-particle multiplet together with some of the higher lying levels are discussed within the framework of the nuclear shell model. A rotational, strongly coupled, band is identified as, most likely, being built on the deformed pig9/2(-1) nuh11/2 configuration in accordance with total routhian surface calculations. Tentative spins and parities are presented as well as B(M1)/B(E2) ratios for some of the transitions in the strongly coupled band.

Competing proton and neutron alignments in 117−120Xe